A photonic crystal waveguide with silicon on insulator in the near-infrared band

A two-dimensional (2D) photonic crystal waveguide in the Gamma-K direction with triangular lattice on a silicon-on insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

The research and progress of micro-fabrication technologies of two-dimensional photonic crystal

The novel material of photonic crystal makes it possible to control a photon, and the photonic integration will have breakthrough progress due to the application of photonic crystal. It is based on the photonic crystal device that the photonic crystal integration could be realized. Therefore, we should first investigate photonic crystal devices based on the active and the passive semiconductor materials, which may have great potential application in photonic integration. The most practical and important method to fabricate two-dimensional photonic crystal is the micro-manufacture method. In this paper, we summarize and evaluate the fabrication methods of two-dimensional photonic crystal in near-infrared region, including electron beam lithography, selection of mask, dry etching, and some works of ours. This will be beneficial to the study of the photonic crystal in China.

A proposal for low cross-talk square-lattice photonic crystal waveguide intersection utilizing the symmetry of waveguide modes

We propose an approach to construct waveguide intersections with broad bandwidth and low cross-talk for square-lattice photonic crystals. by utilizing a vanishing overlap of the propagation modes in the waveguides created by defects which support dipole-like defect modes. The finite-difference time-domain method is used to simulate the waveguide intersection created in the two-dimensional square-lattice photonic crystals. Over a bandwidth of 30 nm with the center wavelength at 1300 nm, transmission efficiency above 90% is obtained with cross-talk below -30 dB. Especially, we demonstrate the transmission of a 500-fs pulse at 1.3 Am through the intersection, and the pulse after transmission shows very little distortion while the cross-talk remains at low level meantime. (c) 2006 Elsevier B.V. All rights reserved.

Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs

We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

Photon localization in amorphous photonic crystal

The photon localization in disordered two-dimensional photonic crystal is studied theoretically. It is found that the mean transmission coefficient in the photonic band decreases exponentially as the disorder degree increases, reflecting the occurrence of Anderson localization. The strength of photon localization can be controlled by tuning the disorder degree in the photonic crystal. We think the variation regular of the transmission coefficient in our disordered system is equivalent to that of the scaling theory of localization.

Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes

A small-size optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes is designed and theoretically simulated using plane wave expansion and finite-difference time-domain method. The interleaver is formed by two parallel and identical photonic crystal slab waveguides which are separated by three rows of air holes. The coupling region is designed below the light line to avoid vertical radiation. The simulated results show that the coupling coefficient is increased and the final length of the interleaver is decreased by enlarging the radius of the middle row of air holes. The transmission properties are analyzed after the interleaver's structure is optimized, and around 100 GHz channel spacing can be got when the length of the interleaver is chosen as 40.5 mu m. (c) 2006 Elsevier B.V. All rights reserved.

Systematic considerations for the patterning of photonic crystal devices by electron beam lithography

Photonic crystal devices with feature sizes of a few hundred nanometers are often fabricated by electron beam lithography. The proximity effect, stitching error and resist profiles have significant influence on the pattern quality, and therefore determine the optical properties of the devices. In this paper, detailed analyses and simple solutions to these problems are presented. The proximity effect is corrected by the introduction of a compensating dose. The influence of the stitching error is alleviated by replacing the original access waveguides with taper-added waveguides, and the taper parameters are also discussed to get the optimal choice. It is demonstrated experimentally that patterns exposed with different doses have almost the same edge-profiles in the resist for the same development time, and that optimized etching conditions can improve the wall angle of the holes in the substrate remarkably. (c) 2006 Elsevier B.V. All rights reserved.

Photon localization in amorphous photonic crystal

The photon localization in disordered two-dimensional photonic crystal is studied by use of multiple- scattering method. The disorder degree can be controlled by adjusting the random rotating angle of the square cell. It is found that the transmission in the band decreases and that in the gap increases as the disorder degree increases, and localization induced by disorder will spread from the band gap edge to the band center and the gap center. Moreover, the mean transmission of the band will decrease exponentiatly with disorder increasing.

Fabrication of photonic crystal on semiconductor materials by using focued ion-beam

A method of manufacturing two-dimensional photonic crystals on several kinds of semiconductor materials in near infrared region by a focused ion beam is introduced, and the corresponding fabrication results are presented and show that the obtained parameters of fabricated photonic crystals are identical with the designed ones. Using the tunable laser source, the spectra of the fabricated passive photonic crystal and the active photonic crystal are measured. The experiment demonstrates that the focused ion-beam can be used to fabricate the perfect two-dimensional photonic crystals and their devices.

Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

Inductively coupled plasma (ICP) etching of InP in Cl-2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90 degrees side-wall is achieved at low DC bias after optimization of the gas mixture.

Structure dependence of mode edges in photonic crystal waveguide with silicon on insulator

The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and two-dimensional plane wave expansion method. The variations of waveguide-mode edges with structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constrant, r/Lambda, is fixed and the lattice constant of photonic crystal, Lambda, increases, the waveguide-mode edges shift to longer wavelengths. When Lambda is fixed and r/Lambda increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Lambda and Lambda are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

Effect of disorder on self-collimated beam in photonic crystal

We report a numerical analysis of various types of disorder effects on self-collimated beam in two-dimensional photonic crystal. Finite-difference time-domain (FDTD) method is used to simulate the process by using a pulse propagation technique. The position disorders along the directions parallel and perpendicular to the incidence are considered. We show that random disorder along the perpendicular direction will have a lesser effect on the performance of the dispersion waveguides than those along the parallel direction. Furthermore, the self-collimation waveguide (SCW) has new characteristics when compared with the photonic crystal line defect waveguide. (c) 2006 Elsevier B.V. All rights reserved.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

A two-dimensional photonic crystal slab mirror with silicon on insulator for wavelength 1.3 mu m

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3 mu m with a silicon-on-insulator (Sol) substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the F-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3 mu m, hence the incident light at wavelength 1.3 mu m will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540mn. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.

Tunable Fano resonance in photonic crystal slabs

A three dimensional analysis of a special class of anisotropic materials is presented. We introduce an extension of the Scattering Matrix Method (SMM) to investigate the behavior of anisotropic Photonic Crystal Slabs (PhCS) subject to external radiation. We show how the Fano effect can play a fundamental role in the realization of tunable optical devices. Moreover, we show how to utilize electron injection, electric field and temperature as parameters to control the Fano resonance shift in both isotropic and anisotropic materials as Si and Potassium Titanium Oxide Phosphate (KTP). We will see that because Fano modes are sensitive and controllable, a broad range of applications can be considered. (c) 2006 Optical Society of America