Liquid crystal based continuous phase retarder: From optically neutral to a quarter waveplate in 200 microseconds

Liquid crystal variable phase retarders have been incorporated into prototype devices for optical communications system applications, both as endless polarization controllers 1,2,3, and as holographic beam steerers 4. Nematic liquid crystals allow continuous control of the degree of retardation induced at relatively slow switching speeds, while ferroelectric liquid crystal based devices allow fast (sub millisecond) switching, but only between two bistable states. The flexoelectro-optic effect 5,6 in short-pitch chiral nematic liquid crystals allows both fast switching of the optic axis and continuous, electric field dependent control of the degree of rotation of the optic axis. A novel geometry for the flexoelectro-optic effect is presented here, in which the helical axis of the chiral nematic is perpendicular to the cell walls (grandjean texture) and the electric field is applied in the plane of the cell. This facilitates deflection of the optic axis of the uniaxial negatively birefringent material from lying along the direction of propagation to having some component in the polarization plane of the light. The device is therefore optically neutral at zero field for telecommunications wavelengths (1550nm), and allows a continuously variable degree of phase excursion to be induced, up to 2π/3 radians achieved so far in a 40μm thick cell. The retardation has been shown both to appear, on application of the field, and disappear on removal, at speeds of 100-500 μs. The direction of deflection of the optic axis is also dependent on the direction of the field, allowing the possibility, in a converging electrode "cartwheel cell", of endless rotation of the liquid crystal waveplate at a higher rate than achievable through dielectric coupling to plain nematic materials.

Formation of shear bands in plane sheet

The formation of shear bands in plane sheet is studied, both analytically and experimentally, to enhance the fundamental understanding of this phenomenon and to develop a capability for predicting material failure. The evolution of voids is measured and its interaction with the process of shear banding is examined. The evolving dilatancy in plasticity is shown to have a vital role in analysing the shear-band type of bifurcation, and tremendously reduces the theoretical value of critical stresses. The analyses, referring to both localized and diffuse modes of bifurcation, fairly explain the corresponding observations obtained through testing a dual-phase steer sheet and provide a justification of the constitutive model used.

Effect of phase-transformation on mechanical-behavior of dual-phase steel plate

The mechanical behavior of dual phase steel plates is affected by internal stresses created during martensite transformation. Analytical modelling of this effect is made by considering a unit cell made of martensite inclusion in a ferrite matrix. A large strain finite element analysis is then performed to obtain the plane stress deformation state. Displayed numerically are the development of the plastic zone and distribution of local state of stress and strain. Studied also are the shape configuration of the martensite (hard-phase) that influences the interfacial condition as related to stress transmission and damage. Internal stresses are found to enhance the global flow stress after yield initiation in the ferrite matrix. Good agreement is obtained between the analytical results and experimental observations.

Crystal-growth in floating zone with phase-change and thermosolutal convections

Floating zone crystal growth in microgravity environment is investigated numerically by a finite element method for semiconductor growth processing, which involves thermocapillary convection, phase change convection, thermal diffusion and solutal diffusion. The configurations of phase change interfaces and distributions of velocity, temperature and concentration fields are analyzed for typical conditions of pulling rates and segregation coefficients. The influence of phase change convection on the distribution of concentration is studied in detail. The results show that the thermocapillary convection plays an important role in mixing up the melt with dopant. The deformations of phase change interfaces by thermal convection-diffusion and pulling rods make larger variation of concentration field in comparison with the case of plane interfaces.

Measurements of Flow Patterns and Velocities of Gas -Water Two -Phase Flows Using Electrical Resistance Imaging

This paper presents a measurement of flow patterns and flow velocities of gas-water two-phase flows based on the technique of electrical resistance tomography (ERT) in a 40m horizontal flow loop. A single-plane and dual-plane ERT sensor on conductive ring technique were used to gather sufficient information for the implementation of flow characteristics particularly flow pattern recognition and air cavity velocity measurement. A fast data collection strategy was applied to the dual-plane ERT sensor and an iterative algorithm was used for image reconstruction. Results, in respect to flow patterns and velocity maps, are reported.

Generalization of the JTZ model to open plane wakes

The JTZ model [C. Jung, T. T¶el and E. Ziemniak, Chaos 3, (1993) 555], as a theoretical model of a plane wake behind a circular cylinder in a narrow channel at a moderate Reynolds number, has previously been employed to analyze phenomena of chaotic scattering. It is ex- tended here to describe an open plane wake without the con¯ned nar- row channel by incorporating a double row of shedding vortices into the intermediate and far wake. The extended JTZ model is found in qualitative agreement with both direct numerical simulations and ex- perimental results in describing streamlines and vorticity contours. To further validate its applications to particle transport processes, the in- teraction between small spherical particles and vortices in an extended JTZ model °ow is studied. It is shown that the particle size has signif- icant in°uences on the features of particle trajectories, which have two characteristic patterns: one is rotating around the vortex centers and the other accumulating in the exterior of vortices. Numerical results based on the extended JTZ model are found in qualitative agreement with experimental ones in the normal range of particle sizes.

Interplay of martensitic phase transformation and plastic slip in polycrystals

Inspired by key experimental and analytical results regarding Shape Memory Alloys (SMAs), we propose a modelling framework to explore the interplay between martensitic phase transformations and plastic slip in polycrystalline materials, with an eye towards computational efficiency. The resulting framework uses a convexified potential for the internal energy density to capture the stored energy associated with transformation at the meso-scale, and introduces kinetic potentials to govern the evolution of transformation and plastic slip. The framework is novel in the way it treats plasticity on par with transformation.

We implement the framework in the setting of anti-plane shear, using a staggered implicit/explict update: we first use a Fast-Fourier Transform (FFT) solver based on an Augmented Lagrangian formulation to implicitly solve for the full-field displacements of a simulated polycrystal, then explicitly update the volume fraction of martensite and plastic slip using their respective stick-slip type kinetic laws. We observe that, even in this simple setting with an idealized material comprising four martensitic variants and four slip systems, the model recovers a rich variety of SMA type behaviors. We use this model to gain insight into the isothermal behavior of stress-stabilized martensite, looking at the effects of the relative plastic yield strength, the memory of deformation history under non-proportional loading, and several others.

We extend the framework to the generalized 3-D setting, for which the convexified potential is a lower bound on the actual internal energy, and show that the fully implicit discrete time formulation of the framework is governed by a variational principle for mechanical equilibrium. We further propose an extension of the method to finite deformations via an exponential mapping. We implement the generalized framework using an existing Optimal Transport Mesh-free (OTM) solver. We then model the $\alpha$--$\gamma$ and $\alpha$--$\varepsilon$ transformations in pure iron, with an initial attempt in the latter to account for twinning in the parent phase. We demonstrate the scalability of the framework to large scale computing by simulating Taylor impact experiments, observing nearly linear (ideal) speed-up through 256 MPI tasks. Finally, we present preliminary results of a simulated Split-Hopkinson Pressure Bar (SHPB) experiment using the $\alpha$--$\varepsilon$ model.

Investigation of the influence of the aberration induced by a plane interface on STED microscopy

The structure of the inhibition patterns is important to the stimulated emission depletion (STED) microscopy. Usually, Laguerre-Gaussian (LG) beam and the central zero-intensity patterns created by inserting phase masks in Gaussian beams are used as the erase beam in STED microscopy. Aberration is generated when focusing beams through an interface between the media of the mismatched refractive indices. By use of the vectorial integral, the effects of such aberration on the shape of depletion patterns and the size of fluorescence emission spot in the STED microscopy are studied. Results are presented as a comparison between the aberration-free case and the aberrated cases. (C) 2009 Optical Society of America

Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

Bimesogenic liquid crystals: New materials for high performance flexoelectric and blue phase displays

In this paper we will describe new bimesogenic nematic liquid crystals that have high flexoelectro-optic coefficients (e/K),of the order of 1.5 CN 1 m-1, high switching angles, up to 100° and fast response times, of the order of 100μs or less. We will describe devices constructed, using the ULH texture that may be switched to the optimum angle of 45° for a birefringence based device with the fields of 4Vμm-1 over a wide temperature range. Such devices use an "in plane" optical switching mode, have gray scale capability and a wide viewing angle. We will describe devices using the USH or Grandjean texture that have an optically isotropic "field off" black state, uses "in plane" switching E fields, to give an induced birefringence phase device, with switching times of the order of 20μs. We will briefly describe new highly reflective Blue Phase devices stable over a 50V temperature range in which an electric field is used to switch the reflection from red to green, for example. Full RGB reflections may be obtained with switching times of a few milliseconds. Finally we will briefly mention potential applications including high efficiency RGB liquid crystal laser sources. © 2006 SID.

Calibration of the spring constant of cantilevers of arbitrary shape using the phase signal in an atomic force microscope.

The measurement of cantilever parameters is an essential part of performing a calibrated measurement with an atomic force microscope (AFM). The thermal motion method is a widely used technique for calibrating the spring constant of an AFM cantilever, which can be applied to non-rectangular cantilevers. Given the trend towards high frequency scanning, calibration of non-rectangular cantilevers is of increasing importance. This paper presents two results relevant to cantilever calibration via the thermal motion method. We demonstrate the possibility of using the AFM's phase signal to acquire the thermal motion. This avoids the challenges associated with connecting the raw photodiode signal to a separate spectrum analyser. We also describe how numerical calculations may be used to calculate the parameters needed in a thermal motion calibration of a non-rectangular cantilever. Only accurate knowledge of the relative size of the in-plane dimensions of the cantilever is needed in this computation. We use this pair of results in the calibration of a variety of rectangular and non-rectangular cantilevers. We observe an average difference between the Sader and thermal motion values of cantilever stiffness of 10%.

Biobjective optimisation of preliminary aircraft trajectories

The protection of the environment against pollutants produced by aviation is of great concern in the 21st century. Among the multiplicity of proposed solutions, modifying flight profiles for existing aircraft is a promising approach. The aim is to deliver and understand the trade-off between environmental impact and operating costs. This work will illustrate the optimisation process of aircraft trajectories by minimising fuel consumption and flight time for the climb phase of an aircraft that belongs to A320 category. To achieve this purpose a new variant of a multi-objective Tabu Search optimiser was evolved and integrated within a computational framework, called GATAC, that simulates flight profiles based on altitude and speed. © 2013 Springer-Verlag.

Compact phase shifter based on highly anisotropic liquid crystals for microwave frequency

A compact microwave phase shifter was designed and fabricated using highly anisotropic liquid crystals (LCs). It comprises a thin LC layer between a ground plane and a directly coupled and inverted microstrip line. The proposed folding configuration is beneficial for size reduction. Both simulation and experimental results confirm the compact size devices with reasonably good performance.

Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy

In-plane optical anisotropy (IPOA) in (001) GaAs/AlGaAs superlattice induced by uniaxial strain has been investigated by reflectance difference spectroscopy (RDS). Uniaxial strain on the order of 10(-4) was introduced by bending a strip sample with a stress apparatus. The IPOA of all interband transitions shows a linear dependence on strain. The birefringence and dichroism spectra induced by strain are obtained by RDS on the basis of a three-phase model, which is in good agreement with the reported results. (c) 2006 American Institute of Physics.

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1+/-3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained. (C) 2003 American Institute of Physics.