Optical and electrical properties of hydrogen-passivated gallium antimonide

The effect of hydrogen-plasma passivation on the optical and electrical properties of gallium antimonide bulk single crystals is presented. Fundamental changes of the radiative recombination after hydrogenation in undoped, zinc-doped, tellurium-doped, and codoped (with Zn and Te) GaSb are reported. The results of optical measurements indicate that passivation of acceptors is more efficient than that of the donors and, in general, the passivation efficiency depends on the doping level. Passivation of deep nonradiative centers is reflected by the gain of photoluminescence intensity and decrease in deep-level transient spectroscopy peak height. Extended defects like grain boundaries and dislocations have also been found to be passivated. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level. The kinetics of thermally released hydrogen in the bulk has been studied by reverse-bias annealing experiments.

An analysis on WDM components in flat gain regions of EDFA

Wavelength-division multiplexing (WDM) technology, by which multiple optical channels can be simultaneously transmitted at different wavelengths through a single optical fiber, is a useful means of making full use of the low-loss characteristics of optical fibers over a wide-wavelength region. The present day multifunction RADARs with multiple transmit receive modules requires various kinds of signal distribution for real time operation. If the signal distribution can be achieved through optical networks by using Wavelength Division Multiplexing (WDM) methods, it results in a distribution scheme with less hardware complexity and leads to the reduction in the weight of the antenna arrays In addition, being an Optical network it is free from Electromagnetic interference which is a crucial requirement in an array environment. This paper discusses about the analysis performed on various WDM components of distribution optical network for radar applications. The analysis is performed by considering the feasible constant gain regions of Erbium doped fiber amplifier (EDFA) in Matlab environment. This will help the user in the selection of suitable components for WDM based optical distribution networks.

Loss and gain signals in broadband stimulated-Raman spectra: Theoretical analysis

Stimulated optical signals obtained by subjecting the system to a narrow band and a broadband pulse show both gain and loss Raman features at the red and blue side of the narrow beam, respectively. Recently observed temperature-dependent asymmetry in these features Mallick et al., J. Raman Spectrosc. 42, 1883 (2011); Dang et al., Phys. Rev. Lett. 107, 043001 (2011)] has been attributed to the Stokes and anti-Stokes components of the third-order susceptibility, chi((3)). By treating the setup as a steady state of an open system coupled to four quantum radiation field modes, we show that Stokes and anti-Stokes processes contribute to both the loss and gain resonances. chi((3)) predicts loss and gain signals with equal intensity for electronically off-resonant excitation. Some asymmetry may exist for resonant excitation. However, this is unrelated to the Stokes vs anti-Stokes processes. Any observed temperature-dependent asymmetry must thus originate from effects lying outside the chi((3)) regime.

MEMS Tunable Optical Filter Based on Multi-Ring Resonator

We propose a novel MEMS tunable optical filter with a flat-top pass band based on multi-ring resonator in an electrostatically actuated microcantilever for communication application. The filter is basically structured on a microcantilever beam and built in optical integrated ring resonator which is placed in one end of the beam to gain maximum stress on the resonator. Thus, when a DC voltage is applied, the beam will bend, that induces a stress and strain in the ring, which brings a change in refractive index and perimeter of the rings leading to change in the output spectrum shift, providing the tenability as high as 0.68nm/mu N. and it is capable of tuning up to 1.7nm.

Gain saturation in 60-fs mode-locked semiconductor laser

A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation. © 2010 Optical Society of America.

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.

Reliable Validation Based on Optical Flow Visualization for CFD Simulations

A reliable validation based on the optical flow visualization for numerical simulations of complex flowfields is addressed in this paper. Several test cases, including two-dimensional, axisymmetric and three-dimensional flowfields, were presented to demonstrate the effectiveness of the validation and gain credibility of numerical solutions of complex flowfields. In the validation, images of these flowfields were constructed from numerical results based on the principle of the optical flow visualization, and compared directly with experimental interferograms. Because both experimental and numerical results are of identical physical representation, the agreement between them can be evaluated effectively by examining flow structures as well as checking discrepancies in density. The study shows that the reliable validation can be achieved by using the direct comparison between numerical and experiment results without any loss of accuracy in either of them.

Temporal synchronization in optical parametric chirped pulse amplification laser system

The effect of temporal synchronization between the chirped signal pulse and the pumping pulse in an optical parametric chirped pulse amplification laser system is researched theoretically and experimentally. The results show that the gain of optical parametric amplification is sensitive to the temporal synchronization. Therefore, accurate temporal synchronization between the chirped signal pulse and the pumping pulse is essential to obtain high optical parametric amplification gain and stable output from an optical parametric chirped pulse amplification laser. Based on our 16.7-TW/120-fs optical parametric chirped pulse amplification laser system with similar to1-ns pumping pulse duration and <10-ps time jitter between the signal and pumping pulse, the effect of the temporal synchronization on optical parametric chirped pulse amplification is demonstrated. The experimental results agree with the calculation. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

High and stable conversion efficiency obtaining in single-stage multi-crystal optical parametric chirped pulse amplification system

An optical parametric chirped-pulse amplification system is demonstrated to provide 32.9% pump-to-signal conversion efficiency . Special techniques are used to make the signal and pump pulses match with each other in both spectral and temporal domains. The broadband 9.5-mJ pulses are produced at the repetition rate of 1 Hz with the gain of over 1.9 x 10(8). The output energy fluctuation of 7.8% is achieved for the saturated amplification process against the pump fluctuation of 10%.

Electrical and optical interconnects for high-performance computing

Technology scaling has enabled drastic growth in the computational and storage capacity of integrated circuits (ICs). This constant growth drives an increasing demand for high-bandwidth communication between and within ICs. In this dissertation we focus on low-power solutions that address this demand. We divide communication links into three subcategories depending on the communication distance. Each category has a different set of challenges and requirements and is affected by CMOS technology scaling in a different manner. We start with short-range chip-to-chip links for board-level communication. Next we will discuss board-to-board links, which demand a longer communication range. Finally on-chip links with communication ranges of a few millimeters are discussed.

Electrical signaling is a natural choice for chip-to-chip communication due to efficient integration and low cost. IO data rates have increased to the point where electrical signaling is now limited by the channel bandwidth. In order to achieve multi-Gb/s data rates, complex designs that equalize the channel are necessary. In addition, a high level of parallelism is central to sustaining bandwidth growth. Decision feedback equalization (DFE) is one of the most commonly employed techniques to overcome the limited bandwidth problem of the electrical channels. A linear and low-power summer is the central block of a DFE. Conventional approaches employ current-mode techniques to implement the summer, which require high power consumption. In order to achieve low-power operation we propose performing the summation in the charge domain. This approach enables a low-power and compact realization of the DFE as well as crosstalk cancellation. A prototype receiver was fabricated in 45nm SOI CMOS to validate the functionality of the proposed technique and was tested over channels with different levels of loss and coupling. Measurement results show that the receiver can equalize channels with maximum 21dB loss while consuming about 7.5mW from a 1.2V supply. We also introduce a compact, low-power transmitter employing passive equalization. The efficacy of the proposed technique is demonstrated through implementation of a prototype in 65nm CMOS. The design achieves up to 20Gb/s data rate while consuming less than 10mW.

An alternative to electrical signaling is to employ optical signaling for chip-to-chip interconnections, which offers low channel loss and cross-talk while providing high communication bandwidth. In this work we demonstrate the possibility of building compact and low-power optical receivers. A novel RC front-end is proposed that combines dynamic offset modulation and double-sampling techniques to eliminate the need for a short time constant at the input of the receiver. Unlike conventional designs, this receiver does not require a high-gain stage that runs at the data rate, making it suitable for low-power implementations. In addition, it allows time-division multiplexing to support very high data rates. A prototype was implemented in 65nm CMOS and achieved up to 24Gb/s with less than 0.4pJ/b power efficiency per channel. As the proposed design mainly employs digital blocks, it benefits greatly from technology scaling in terms of power and area saving.

As the technology scales, the number of transistors on the chip grows. This necessitates a corresponding increase in the bandwidth of the on-chip wires. In this dissertation, we take a close look at wire scaling and investigate its effect on wire performance metrics. We explore a novel on-chip communication link based on a double-sampling architecture and dynamic offset modulation technique that enables low power consumption and high data rates while achieving high bandwidth density in 28nm CMOS technology. The functionality of the link is demonstrated using different length minimum-pitch on-chip wires. Measurement results show that the link achieves up to 20Gb/s of data rate (12.5Gb/s/$\mu$m) with better than 136fJ/b of power efficiency.