ABRASIVE WEAR OF LUBRICATED CONTACTS.

A foil bearing arrangement has been used to investigate the wear of carbon graphite materials running against 316 stainless steel in the presence of a hydrodynamic film of fluid contaminated with particulate material. As the thickness of the fluid film is reduced so the wear rate of the carbon reaches a maximum value, further reductions in thickness actually producing reduced wear rates. Possible mechanisms and implications of this behaviour are discussed.

The effect of surface hardening on the elastic shakedown of elliptical contacts

The effect of varying both the aspect ratio and the coefficient of friction of contacts with elliptical geometry on their elastic shakedown performance has been examined theoretically for surfaces with two types of subsurface hardness or strength profiles. In stepwise hardening the hard layer is of uniform strength while in linear hardening its strength reduces from a maximum at the surface to that of the core at the base of the hardened layer. The shakedown load is expressed as the ratio of the maximum Hertzian pressure to the strength of the core material. As the depth of hardening, expressed as a multiple of the elliptical semi-axis, is increased so the potential shakedown load increases from a level that is appropriate to a uniform half-space of unhardened material to a value reflecting the hardness of the surface and near-surface material. In a step-hardened material, the shakedown limit for a surface 'pummelled' by the passage of a sequence of such loads reaches a cut-off or plateau value, which cannot be exceeded by further increases in hardening depth irrespective of the value of the friction coefficient. For a linear-hardened material the corresponding plateau is approached asymptotically. The work confirms earlier results on the upper bounds on shakedown of both point and line contacts and provides numerical values of shakedown loads for intermediate geometries. In general, the case depth required to achieve a given shakedown limit reduces in moving from a transversely moving nominal line load to an axisymmetric point load.

The influence of repeated loading, residual stresses and shakedown on the behaviour of tribological contacts

Most tribological pairs carry their service load not just once but for a very large number of repeated cycles. During the early stages of this life, protective residual stresses may be developed in the near surface layers which enable loads which are of sufficient magnitude to cause initial plastic deformation to be accommodated purely elastically in the longer term. This is an example of the phenomenon of 'shakedown' and when its effects are incorporated into the design and operation schedule of machine components this process can lead to significant increases in specific loading duties or improvements in material utilization. Although the underlying principles can be demonstrated by reference to relatively simple stress systems, when a moving Hertzian pressure distribution in considered, which is the form of loading applicable to many contact problems, the situation is more complex. In the absence of exact solutions, bounding theorems, adopted from the theory of plasticity, can be used to generate appropriate load or shakedown limits so that shakedown maps can be drawn which delineate the boundaries between potentially safe and unsafe operating conditions. When the operating point of the contact lies outside the shakedown limit there will be an increment of plastic strain with each application of the load - these can accumulate leading eventually to either component failure or the loss of material by wear. © 2005 Elsevier Ltd. All rights reserved.

Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (Ion/Ioff ratio: 1 × 103; mobility: 0.071 cm2 V-1 s-1). © 2010 IOP Publishing Ltd.

The geometry and the number of contacts of monodisperse sphere packs using X-ray tomography

The three-dimensional structure of very large samples of monodisperse bead packs is studied by means of X-Ray Computed Tomography. We retrieve the coordinatesofeach bead inthe pack and wecalculate the average coordination number by using the tomographic images to single out the neighbors in contact. The results are compared with the average coordination number obtained in Aste et al. (2005) by using a deconvolution technique. We show that the coordination number increases with the packing fraction, varying between 6.9 and 8.2 for packing fractions between 0.59 and 0.64. © 2005 Taylor & Francis Group.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation

Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), δ-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni silicides have been formed: NiSi on the gate and δ-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, θ-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from δ-Ni 2Si/Si(1 0 0) interface compared to θ-Ni2Si/Si(1 0 0) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. © 2013 Elsevier B.V. All rights reserved.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.

Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

Indium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200 degrees C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts. (c) 2006 American Institute of Physics.