Operator, organizational, direct support, and general support maintenance manual : test set, transistor TS-1836C/U.

"April 1972."

Operator's, organizational, direct support and general support maintenance manual : test set, transistor TS-1836D/U, NSN 6625-00-138-7320.

"August 1975."

Transistor circuit engineering.

Mode of access: Internet.

PEDOT:PSS thin films: Applications in Bioelectronics

Owing to their capability of merging the properties of metals and conventional polymers, Conducting Polymers (CPs) are a unique class of carbon-based materials capable of conducting electrical current. A conjugated backbone is the hallmark of CPs, which can readily undergo reversible doping to different extents, thus achieving a wide range of electrical conductivities, while maintaining mechanical flexibility, transparency and high thermal stability. Thanks to these inherent versatility and attracting properties, from their discovery CPs have experienced incessant widespread in a great plethora of research fields, ranging from energy storage to healthcare, also encouraging the spring and growth of new scientific areas with highly innovative content. Nowadays, Bioelectronics stands out as one of the most promising research fields, dealing with the mutual interplay between biology and electronics. Among CPs, the polyelectrolyte complex poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS), especially in the form of thin films, has been emphasized as ideal platform for bioelectronic applications. Indeed, in the last two decades PEDOT:PSS has played a key role in the sensing of bioanalytes and living cells interfacing and monitoring. In the present work, development and characterization of two kinds of PEDOT:PSS-based devices for applications in Bioelectronics are discussed in detail. In particular, a low-cost amperometric sensor for the selective detection of Dopamine in a ternary mixture was optimized, taking advantage of the electrocatalytic and antifouling properties that render PEDOT:PSS thin films appealing tools for electrochemical sensing of bioanalytes. Moreover, the potentialities of this material to interact with live cells were explored through the fabrication of a microfluidic trapping device for electrical monitoring of 3D spheroids using an impedance-based approach.

Design and development of distributed feedback transistor lasers

The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved.

Measurement of finite-frequency current statistics in a single-electron transistor

Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

Determinazione gascromatografica di composti organici volatili e semi-volatili (VOCs e SVOCs) in poliolefine ed effetti delle condizioni di lavorazione

A relevant problem of polyolefins processing is the presence of volatile and semi-volatile compounds (VOCs and SVOCs) such as linear chains alkanes found out in final products. These VOCs can be detected by customers from the unpleasant smelt and can be an environmental issue, at the same time they can cause negative side effects during process. Since no previously standardized analytical techniques for polymeric matrix are available in bibliography, we have implemented different VOCs extraction methods and gaschromatographic analysis for quali-quantitative studies of such compounds. In literature different procedures can be found including microwave extraction (MAE) and thermo desorption (TDS) used with different purposes. TDS coupled with GC-MS are necessary for the identification of different compounds in the polymer matrix. Although the quantitative determination is complex, the results obtained from TDS/GC-MS show that by-products are mainly linear chains oligomers with even number of carbon in a C8-C22 range (for HDPE). In order to quantify these linear alkanes by-products, a more accurate GC-FID determination with internal standard has been run on MAE extracts. Regardless the type of extruder used, it is difficult to distinguish the effect of the various processes, which in any case entails having a lower-boiling substance content, lower than the corresponding virgin polymer. The two HDPEs studied can be distinguished on the basis of the quantity of analytes found, therefore the production process is mainly responsible for the amount of VOCs and SVOCs observed. The extruder technology used by Sacmi SC allows to obtain a significant reduction in VOCs compared to the conventional screw system. Thus, the result is significantly important as a lower quantity of volatile substances certainly leads to a lower migration of such materials, especially when used for food packaging.

Dimetiladipato: una via di sintesi alternativa da chetoni e carbonati organici

In questo progetto è stata studiata la reazione tra dimetil carbonato e ciclopentanone come possibile alternativa sostenibile per la produzione di dimetiladipato, composto di notevole interesse industriale. Lo studio si è basato su reazioni in fase liquida con catalizzatori eterogenei (commerciali e di sintesi), sia in condizioni batch che soprattutto continue, mai riportate in letteratura, per le quali un apposito reattore a letto fisso è stato progettato e messo a punto. I parametri indagati sono il tempo di contatto, il rapporto di alimentazione dei due reagenti ed il catalizzatore utilizzato, osservando anche l’andamento di grandezze quali rese e conversioni nel tempo. Sono stati inoltre effettuate delle prove per approfondire il meccanismo e lo schema di reazione. Per il processo continuo è risultato come un maggior tempo di contatto porti a maggiori conversioni e rese, mentre per quanto riguarda il rapporto molare di alimentazione, il rapporto ottimale tra dimetilcarbonato e ciclopentanone sembra essere 15:1, sia come resa di dimetil adipato che come compromesso tra reazioni parassite dovute all’eccesso di dimetil carbonato e reazioni di autocondensazione del ciclopentanone. Tra i catalizzatori testati, i più efficienti nella conversione dei reagenti e nella formazione del prodotto sono risultati essere quelli con caratteristiche basiche come MgO e CeO2, rispetto ad un catalizzatore meno basico come ZrO2.

Effetto di fertilizzanti ottenuti dal riciclaggio di scarti organici sulle caratteristiche vegeto-produttive di sangiovese

Negli ultimi anni, i cambiamenti nella raccolta dei rifiuti domestici e nei sistemi di gestione dello smaltimento hanno aumentato la quantità di compost prodotto nelle città italiane. L'applicazione di compost ai terreni agricoli permette il sequestro di forme stabili di C ed N. Data l’estesa superficie a vite che copre circa 660.000 ettari (ISTAT 2021), risulta interessante valutare l'utilizzo di compost su questa coltura. L’esperimento ha come scopo quello di studiare gli effetti di alcuni composti organici sulla fertilità chimica del suolo, sulla crescita della pianta e sulla qualità dell’uva. La prova è stata condotta a Cadriano, Bologna, su un vigneto di Sangiovese innestato su portinnesto 110 Richter, messo a dimora nel 2019 e allevato a cordone speronato. Nello specifico, sono stati utilizzati i seguenti fertilizzanti: 1) ammendante compostato misto (ACM), 2) gesso di defecazione (GDD) e 3) concime minerale. Dai risultati è emerso come il trattamento GDD abbia determinato un aumento della concentrazione di azoto minerale nel suolo, che si è manifestato principalmente con elevati livelli di azoto nelle foglie e una minor produzione. Al contrario l’ACM ha presentato un effetto simile al concime minerale e ha indotto, allo stesso tempo, una maggior produzione, senza effetti negativi sulla qualità dell’uva.

Electrochemistry of polycyclic aromatic molecules for advanced carbon nanostructures: luminescence and transistor applications

Polycyclic aromatic hydrocarbons (PAHs) are a large class of π-conjugated organic molecules with fused aromatic rings, which can be considered as fragments of 2D-graphene and have been extensively studied for their unique optical and electronic properties. The aim of this study is to understand the complex electrochemical behaviour of planar, curved, and heteroatom doped polycyclic aromatic molecules, particularly focusing on the oxidative coupling of their radical cations and the electrochemically induced cyclodehydrogenation reactions. In the first part of this thesis, the class of PAHs and aromatic nanostructures are introduced, and the reactivity of electrogenerated species is discussed, focusing on the electrochemical approach for the synthesis of extended π-conjugated structures. Subsequently, the electrochemical properties and reactivity of electrogenerated radical ions of planar and curved polyaromatics are correlated to their structures. In the third chapter, electrochemical cyclodehydrogenation of hexaphenylbenzene is used to prepare self-assembled hexabenzocoronene, directly deposited on an interdigitated electrode, which was characterised as organic electrochemical transistor. In the fourth chapter, the electrochemical behaviour of a family of azapyrene derivatives has been carefully investigated together with the electrogenerated chemiluminescence (ECL), both by ion-annihilation and co-reactant methods. Two structural azapyrene isomers with different nitrogen positions are thoroughly discussed in terms of redox and ECL properties. Interestingly, the ECL of only one of them showed a double emission with excimer formation. A detailed mechanism is discussed for the ECL by co-reactant benzoyl peroxide, to rationalise the different ECL behaviours of the two isomers on the basis of their topologically modulated electronic properties. In conclusion, the different electrochemical behaviours of PAHs were shown, focussing on the chemical reactivity of the electrogenerated species and taking advantage of it for important processes spanning from unconventional synthesis methods for carbon nanostructures to the exploitation of self-assembled nanostructured systems in organic electronics, to novel organic emitters in ECL.

Sintesi di dimetiladipato da carbonati organici e ciclopentanone utilizzando catalizzatori eterogenei a base di zinco

Lo scopo di questo progetto è studiare e sviluppare una sintesi alternativa del dimetiladipato (DMA), a partire da ciclopentanone (CPO) e dimetilcarbonato (DMC), con l’utilizzo di un ossido misto di zinco e magnesio come catalizzatore eterogeneo. Le prove sono state svolte in fase liquida con un reattore operante in condizioni discontinue (batch). In particolare, si è investigato l’effetto di diversi parametri operativi sulla reazione quali il tempo, il rapporto molare di alimentazione dei due reagenti, il carico catalitico utilizzato, il rapporto atomico Zn/Mg nel catalizzatore e la temperatura. Una volta individuate le migliori condizioni, si è valutata la possibilità di svolgere la reazione in due step, per cercare di incrementare la resa di DMA. Inizialmente, si è studiato solo il secondo step, cioè la reazione fra l’intermedio (carbossimetilciclopentan-2-one) e il metanolo e si sono ottenute rese di DMA del 92% con un rapporto MeOH:Intermedio di 150:1. Dopo aver ricavato le migliori condizioni di tale reazione, si è svolta la reazione completa a due step e si è dimostrato che è possibile condurre il secondo step a temperature più basse rispetto al primo, per convertire l’intermedio rimasto a DMA e migliorarne la resa dal 32% al 40%.

Development of wearable electrochemical sensors for the determination of biological analytes

Wearable biosensors are attracting interest due to their potential to provide continuous, real-time physiological information via dynamic, non-invasive measurements of biochemical markers in biofluids, such as interstitial fluid (ISF). One notable example of their applications is for glycemic monitoring in diabetic patients, which is typically carried out either by direct measurement of blood glucose via finger pricking or by wearable sensors that can continuously monitor glucose in ISF by sampling it from below the skin with a microneedle. In this context, the development of a new and minimally invasive multisensing tattoo-based platform for the monitoring of glucose and other analytes in ISF extracted through reverse iontophoresis in proposed by the GLUCOMFORT project. This elaborate describes the in-vitro development of flexible electrochemical sensors based on inkjet-printed PEDOT:PSS and metal inks that are capable of determining glucose and chloride at biologically relevant concentrations, making them good candidates for application in the GLUCOMFORT platform. In order to make PEDOT:PSS sensitive to glucose at micromolar concentrations, a biocompatible functionalization based on immobilized glucose oxidase and electrodeposited platinum was developed. This functionalization was successfully applied to bulk and flexible amperometric devices, the design of which was also optimized. Using the same strategy, flexible organic electrochemical transistors (OECTs) for glucose sensing were also made and successfully tested. For the sensing of chloride ions, an organic charge-modulated field-effect transistor (OCMFET) featuring a silver/silver chloride modified floating gate electrode was developed and tested.

Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot

A numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping.