High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror

A high-power continuous wave (cw) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41 %. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers. (C) 2006 Elsevier Ltd. All rights reserved.

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

Idealised operation of zero-voltage-switching series-L/parallel-tuned Class-E power amplifier

An analysis of a modified series-L/parallel-tuned Class-E power amplifier is presented, which includes the effects that a shunt capacitance placed across the switching device will have on Class-E behaviour. In the original series L/parallel-tuned topology in which the output transistor capacitance is not inherently included in the circuit, zero-current switching (ZCS) and zero-current derivative switching (ZCDS) conditions should be applied to obtain optimum Class-E operation. On the other hand, when the output transistor capacitance is incorporated in the circuit, i.e. in the modified series-L/parallel-tuned topology, the ZCS and ZCDS would not give optimum operation and therefore zero-voltage-switching (ZVS) and zero-voltage-derivative switching (ZVDS) conditions should be applied instead. In the modified series-L/parallel-tuned Class-E configuration, the output-device inductance and the output-device output capacitance, both of which can significantly affect the amplifier's performance at microwave frequencies, furnish part, if not all, of the series inductance L and the shunt capacitance COUT, respectively. Further, when compared with the classic shunt-C/series-tuned topology, the proposed Class-E configuration offers some advantages in terms of 44% higher maximum operating frequency (fMAX) and 4% higher power-output capability (PMAX). As in the classic topology, the fMAX of the proposed amplifier circuit is reached when the output-device output capacitance furnishes all of the capacitance COUT, for a given combination of frequency, output power and DC supply voltage. It is also shown that numerical simulations agree well with theoretical predictions.

A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier

This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as ‘third-harmonic-peaking Class-EF PA’. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

Thermodynamic analysis and comparison of downdraft gasifiers integrated with gas turbine, spark and compression ignition engines for distributed power generation

The objective of the present article is to assess and compare the performance of electricity generation systems integrated with downdraft biomass gasifiers for distributed power generation. A model for estimating the electric power generation of internal combustion engines and gas turbines powered by syngas was developed. First, the model determines the syngas composition and the lower heating value; and second, these data are used to evaluate power generation in Otto, Diesel, and Brayton cycles. Four synthesis gas compositions were tested for gasification with: air; pure oxygen; 60% oxygen with 40% steam; and 60% air with 40% steam. The results show a maximum power ratio of 0.567 kWh/Nm(3) for the gas turbine system, 0.647 kWh/Nm(3) for the compression ignition engine, and 0.775 kWh/Nm(3) for the spark-ignition engine while running on synthesis gas which was produced using pure oxygen as gasification agent. When these three systems run on synthesis gas produced using atmospheric air as gasification agent, the maximum power ratios were 0.274 kWh/Nm(3) for the gas turbine system, 0.302 kWh/Nm(3) for CIE, and 0.282 kWh/Nm(3) for SIE. The relationship between power output and synthesis gas flow variations is presented as is the dependence of efficiency on compression ratios. Since the maximum attainable power ratio of CIE is higher than that of SIE for gasification with air, more research should be performed on utilization of synthesis gas in CIE. (C) 2014 Elsevier Ltd. All rights reserved.

An unequivocal normalization-based paradigm to solve dynamic economic and emission active-reactive OPF (optimal power flow)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Despacho ótimo de potências ativa e reativa de sistema elétricos multi-áreas considerando restrições físicas, econômicas e ambientais =: Envronmentally constrained active-reactive optimal power flow-a compromising strategy for economic-emission dispatch and a multi-area paradigm

Pós-graduação em Engenharia Elétrica - FEIS

One-watt fiber-based power-by-light system for satellite applications

In this work, a fiber-based optical powering (or power-by-light) system capable of providing more than 1 W is developed. The prototype was used in order to power a shunt regulator for controlling the activation and deactivation of solar panels in satellites. The work involves the manufacture of a light receiver (a GaAs multiple photovoltaic converter (MPC)), a power conditioning block, and a regulator and the implementation and characterization of the whole system. The MPC, with an active area of just 3.1 mm2, was able to supply 1 W at 5 V with an efficiency of 30%. The maximum measured device efficiency was over 40% at an input power (Pin) of 0.5 W. Open circuit voltage over 7 V was measured for Pin over 0.5 W. A system optoelectronic efficiency (including the optical fiber, connectors, and MPC) of 27% was measured at an output power (Pout) of 1 W. At Pout = 0.2 W, the efficiency was as high as 36%. The power conditioning block and the regulator were successfully powered with the system. The maximum supplied power in steady state was 0.2 W, whereas in transient state, it reached 0.44 W. The paper also describes the characterization of the system within the temperature range going from -70 to +100?°C.

Smoothing of PV power fluctuations by geographical dispersion

The quality and the reliability of the power generated by large grid-connected photovoltaic (PV) plants are negatively affected by the source characteristic variability. This paper deals with the smoothing of power fluctuations because of geographical dispersion of PV systems. The fluctuation frequency and the maximum fluctuation registered at a PV plant ensemble are analyzed to study these effects. We propose an empirical expression to compare the fluctuation attenuation because of both the size and the number of PV plants grouped. The convolution of single PV plants frequency distribution functions has turned out to be a successful tool to statistically describe the behavior of an ensemble of PV plants and determine their maximum output fluctuation. Our work is based on experimental 1-s data collected throughout 2009 from seven PV plants, 20 MWp in total, separated between 6 and 360 km.

High-power quantum-dot vertical-external-cavity surface-emitting laser exceeding 8 W

We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavity surface-emitting laser, optimized for high-power emission at 1040 nm. A maximum continuous-wave output power of 8.41 W is obtained at a heat sink temperature of 1.5 °C. By inserting a birefringent filter inside the laser cavity, a wavelength tuning over a range of 45 nm is achieved. © 2014 IEEE.

Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDs

Internal quantum efficiency (IQE) of a high-brightness blue LED has been evaluated from the external quantum efficiency measured as a function of current at room temperature. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined separately IQE of the LED structure and light extraction efficiency (LEE) of UX:3 chip. Full text Nowadays, understanding of LED efficiency behavior at high currents is quite critical to find ways for further improve­ment of III-nitride LED performance [1]. External quantum ef­ficiency ηe (EQE) provides integral information on the recom­bination and photon emission processes in LEDs. Meanwhile EQE is the product of IQE ηi and LEE ηext at negligible car­rier leakage from the active region. Separate determination of IQE and LEE would be much more helpful, providing correla­tion between these parameters and specific epi-structure and chip design. In this paper, we extend the approach of [2,3] to the whole range of the current/optical power variation, provid­ing an express tool for separate evaluation of IQE and LEE. We studied an InGaN-based LED fabricated by Osram OS. LED structure grown by MOCVD on sapphire substrate was processed as UX:3 chip and mounted into the Golden Dragon package without molding. EQE was measured with Labsphere CDS-600 spectrometer. Plotting EQE versus output power P and finding the power Pm corresponding to EQE maximum ηm enables comparing the measurements with the analytical rela­tionships ηi = Q/(Q+p1/2+p-1/2) ,p = P/Pm , and Q = B/(AC) 1/2 where A, Band C are recombination constants [4]. As a result, maximum IQE value equal to QI(Q+2) can be found from the ratio ηm/ηe plotted as a function of p1/2 +p1-1/2 (see Fig.la) and then LEE calculated as ηext = ηm (Q+2)/Q . Experimental EQE as a function of normalized optical power p is shown in Fig. 1 b along with the analytical approximation based on the ABC­model. The approximation fits perfectly the measurements in the range of the optical power (or operating current) variation by eight orders of magnitude. In conclusion, new express method for separate evaluation of IQE and LEE of III-nitride LEDs is suggested and applied to characterization of a high-brightness blue LED. With this method, we obtained LEE from the free chip surface to the air as 69.8% and IQE as 85.7% at the maximum and 65.2% at the operation current 350 rnA. [I] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, "Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies," 1. AppL Phys., vol. 114, no. 7, pp. 071101, Aug., 2013. [2] C. van Opdorp and G. W. 't Hooft, "Method for determining effective non radiative lifetime and leakage losses in double-heterostructure las­ers," 1. AppL Phys., vol. 52, no. 6, pp. 3827-3839, Feb., 1981. [3] M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, "A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes," 1. AppL Phys., vol. 106, no. II, pp. 114508, Dec., 2009. [4] Qi Dai, Qifeng Shan, ling Wang, S. Chhajed, laehee Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, Min-Ho Kim, and Yongjo Park, "Carrier recombination mechanisms and efficiency droop in GalnN/GaN light-emitting diodes," App/. Phys. Leu., vol. 97, no. 13, pp. 133507, Sept., 2010. © 2014 IEEE.

Multi-kilowatt peak power nanosecond Er-doped fiber laser

We report a two-stage diode-pumped Er-doped fiber amplifier operating at the wavelength of 1550 nm at the repetition rate of 10-100 kHz with an average output power of up to 10 W. The first stage comprising Er-doped fiber was core-pumped at the wavelength of 1480 nm, whereas the second stage comprising double-clad Er/Yb-doped fiber was clad-pumped at the wavelength of 975 nm. The estimated peak power for the 0.4-nm full-width at half-maximum laser emission at the wavelength of 1550 nm exceeded 4-kW level. The initial 100-ns seed diode laser pulse was compressed to 3.5 ns as a result of the 34-dB total amplification. The observed 30-fold efficient pulse compression reveals a promising new nonlinear optical technique for the generation of high power short pulses for applications in eye-safe ranging and micromachining.

Multi-output DC-DC converters based on diode-clamped converters configuration : topology and control strategy

This paper presents a new DC-DC Multi-Output Boost (MOB) converter which can share its total output between different series of output voltages for low and high power applications. This configuration can be utilised instead of several single output power supplies. This is a compatible topology for a diode-clamed inverter in the grid connection systems, where boosting low rectified output-voltage and series DC link capacitors is required. To verify the proposed topology, steady state and dynamic analysis of a MOB converter are examined. A simple control strategy has been proposed to demonstrate the performance of the proposed topology for a double-output boost converter. The topology and its control strategy can easily be extended to offer multiple outputs. Simulation and experimental results are presented to show the validity of the control strategy for the proposed converter.