High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.

High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD

An InGaAsP/InGaAsP multiple quantum wells (MQWs) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. A 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 mu m). High-quality crystal layers with a photoluminescence (PL) ftill-width-at-half-maximum (FWHM) of less than 30 meV were achieved. Using novel tapered masks, the transition-effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length. (C) 2005 Elsevier B.V. All rights reserved.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

A novel ultra low power temperature sensor for UHF RFID tag chip

A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

A low power integrated CMOS transmitter for BCI system

The prototype wafer of a low power integrated CMOS Transmitter for short-range biotelemetry application has been designed and fabricated, which is prospective to be implanted in the human brain to transfer the extracted neural information to the external computer. The transmitter consists of five parts, a bandgap current regulator, a ring oscillator, a buffer, a modulator and a power transistor. High integration and low power are the most distinct criteria for such an implantable integrated circuit. The post-simulation results show that under a 3.3 V power supply the transmitter provides 100.1 MHz half-wave sinusoid current signal to drive the off-chip antenna, the output peak current range is -0.155 mA similar to 1.250 mA, and on-chip static power dissipation is low to 0.374 mW. All the performances of the transmitter satisfy the demands of wireless real-time BCI system for neural signals recording and processing.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength

We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.

Surface Initiated Polymerization from Substrates of Low Initiator Density and Its Applications in Biosensors

Surface initiated polymerization (SIP) has become an attractive method for tailoring physical and chemical properties of surfaces for a broad range of applications. Most of those application relied on the merit of a high density coating. In this study we explored a long overlooked field of SIP. SIP from substrates of low initiator density. We combined ellipsometry with AFM to investigate the effect of initiatior density and polymerization time on the morphology of polymer coatings. In addition, we carefully adjusted the nanoscale separation of polymer chains to achieve a balance between nonfouling and immobilization capacities. We further tested the performance of those coating on various biosensors, such as quartz crystal microbalance, surface plasmon resonance, and protein microarrays. The optimized matrices enhanced the performance of those biosensors. This report shall encourage researches to explore new frontiers in SIP that go beyond polymer brushes.

SYNTHESIS AND CHARACTERIZATION OF HYPERBRANCHED VINYL POLYMERS FROM RAFT POLYMERIZATION OF AN ASYMMETRIC DIVINYL MONOMER

Hyperbranched vinyl polymers were prepared by reversible addition-fragmentation chain transfer ( RAFT) polymerization of a styrenic asymmetric divinyl monomer. This was achieved by using cumyl dithiobenzoate or S-dodecyl-S'-(alpha,alpha'-dimethyl-alpha ''-acetic acid) trithiocarbonate as the chain transfer agent, 1,1'-azobis(cyclohexanecarbonitrile) or thermal initiation as a source of radicals. Cross-linking was inhibited by a rapid RAFT-based equilibrium between active propagation chains and dormant species, and thus a hyperbranched polymer with a monomer conversion as high as 80% was obtained. The hyperbranched structure and properties of the resultant polymers were characterized by a combination of H-1-NMR spectroscopy and a triple detection size exclusion chromatography (TRI-SEC). The hyperbranched vinyl polymer has a broad molecular weight distributions and a low Mark-Houwink exponent alpha value compared with the linear counterpart.

Effect of annealing on the viscoelastic and viscoplastic responses of low-density polyethylene

Two series of tensile tests with constant crosshead speeds (ranging from 5 to 200 mm/min) and tensile relaxation tests (at strains from 0.03 to 0.09) were performed on low-density polyethylene in the subyield region of deformations at room temperature. Mechanical tests were carried out on nonannealed specimens and on samples annealed for 24 h at the temperatures T = 50, 60, 70, 80, and 100 degreesC. Constitutive equations were derived for the time-dependent response of semicrystalline polymers at isothermal deformations with small strains. A polymer is treated as an equivalent heterogeneous network of chains bridged by temporary junctions (entanglements, physical crosslinks, and lamellar blocks). The network is thought of as an ensemble of mesoregions linked with each other. The viscoelastic behavior of a polymer is modeled as a thermally induced rearrangement of strands (separation of active strands from temporary junctions and merging of dangling strands with the network). The viscoplastic response reflects sliding of junctions in the network with respect to their reference positions driven by macrostrains. Stress-strain relations involve five material constants that were found by fitting the observations.

The viscoelastic and viscoplastic behavior of low-density polyethylene

Three series of tensile tests with constant cross-head speeds (ranging from 5 to 200 mm/min), tensile relaxation tests (at strains from 0.03 to 0.09) and tensile creep tests (at stresses from 2.0 to 6.0 MPa) are performed on low-density polyethylene at room temperature. Constitutive equations are derived for the time-dependent response of semicrystalline polymers at isothermal deformation with small strains. A polymer is treated as an equivalent heterogeneous network of chains bridged by temporary junctions (entanglements, physical cross-links and lamellar blocks). The network is thought of as an ensemble of meso-regions linked with each other. The viscoelastic behavior of a polymer is modelled as thermally-induced rearrangement of strands (separation of active strands from temporary junctions and merging of dangling strands with the network). The viscoplastic response reflects mutual displacement of meso-domains driven by macro-strains. Stress-strain relations for uniaxial deformation are developed by using the laws of thermodynamics. The governing equations involve five material constants that are found by fitting the observations. Fair agreement is demonstrated between the experimental data and the results of numerical simulation.

Electrically conductive, melt-processed ternary blends of polyaniline/dodecylbenzene sulfonic acid, ethylene/vinyl acetate, and low-density polyethylene

Although polyaniline (PANI) has high conductivity and relatively good environmental and thermal stability and is easily synthesized, the intractability of this intrinsically conducting polymer with a melting procedure prevents extensive applications. This work was designed to process PANI with a melting blend method with current thermoplastic polymers. PANI in an emeraldine base form was plasticized and doped with dodecylbenzene sulfonic acid (DBSA) to prepare a conductive complex (PANI-DBSA). PANI-DBSA, low-density polyethylene (LDPE), and an ethylene/vinyl acetate copolymer (EVA) were blended in a twin-rotor mixer. The blending procedure was monitored, including the changes in the temperature, torque moment, and work. As expected, the conductivity of ternary PANI-DBSA/LDPE/EVA was higher by one order of magnitude than that of binary PANI-DBSA/LDPE, and this was attributed to the PANI-DBSA phase being preferentially located in the EVA phase. An investigation of the morphology of the polymer blends with high-resolution optical microscopy indicated that PANI-DBSA formed a conducting network at a high concentration of PANI-DBSA. The thermal and crystalline properties of the polymer blends were measured with differential scanning calorimetry. The mechanical properties were also measured.

A wide-bandgap semiconducting polymer for ultraviolet and blue light emitting diodes

A novel wide-bandgap conjugated polymer (PDHFSCHD) consisting of alternating dihexylfluorene and rigidly twisted biphenyl units has been synthesized. The new fluorene-based copolymer composed of rigid twisting segments in the main-chain exhibits an optical bandgap of as high as 3.26 eV, and a highly efficient ultraviolet emission with peaks at 368 nm and 386 nm. An electroluminescence device from PDHFSCHD neat film as an active layer shows UV emission which peaks at 395 nm with a turn on voltage below 8 V By optimizing the device conditions, a peak EL quantum efficiency of 0.054% and brightness of 10 cd.m(-2) was obtained. Furthermore, blending a poly(dihexylfluorene) in the PDHFSCHD host gave pure blue emission peaking at 417 nm, and 440 nm without long wavelength emission from aggregated species. Efficient energy transfer from PDHFSCHD to PDHF was demonstrated in these blended systems. Depressed chain-aggregation of PDHF in the PDHFSCHD host can correspond to pure blue emission behaviors.

AFM study of the self-assembly behavior of hexa-armed star polymers with a discotic triphenylene core

The size-armed polystyrenes and poly-(methyl methacrylate)s with a triphenylene core showed different self-assembling patterns, isolated cylinders for polySt on mico and highly ordered cylindrical pores for polyMMA on a silicon water. With a decrease of polymer concentration in tetrahydrofuran (HHF), the size and height of cylinders decreased for polySt, but fur polyMMA, the size and depth of the cylindrical pores increased. Slow evaporation of the solvent and a low molecular weight favored the formation of regular patterns.