PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

Deviation from the stoichiometric composition of single-crystal 'Er2Co17'

The deviation from the stoichiometric composition of single-crystal 'Er2Co17' has been determined by theoretical analysis. It is found that the composition of this single-crystal 'Er2Co17' is rich in cobalt, and its real composition is suggested to be Er2-deltaCo17+2 delta (delta = 0.14) on the basis of a comparison of calculations based on the single-ion model with a series of experiments. The values of the Er-Co exchange field H-ex and the crystalline-electric-field (CEF) parameters A(n)(m) at the rare-earth (R) site in the 'Er2Co17' compound are also evaluated at the same time. The experiments provide the following data: the temperature dependence of the spontaneous magnetization of the compounds and the normalized magnetic moment of the Er ion, the magnetization curves dong the crystallographic axes at 4.2 K and 200 K, and the temperature dependence of the magnetization along the crystallographic axes in a field of 4 T.

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ～ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Asymmetric dark current in double barrier quantum well infrared photodetectors

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Cross-correlation of excitation functions for different fragments and different scattering angles in Al-27(F-19, x)y reactions

Excitation functions have been measured for different projectile-like fragments produced in Al-27(F-19,x)y reactions at incident energies from 110.25 to 118.75 MeV in 250 keV steps. Strong cross section fluctuations of the excitation functions are observed. The cross- correlation coefficients of the excitation functions for different atomic number Z and for different scattering angle theta(cm) have been deduced. These coefficients are much larger than the statistical theoretical calculated ones. This indicates that there are strong correlations between different exit channels in the dissipative heavy ion Collision of Al-27(F-19,x)y.

Property measurement of the CsI(Tl) crystal prepared at IMP

Large-sized CsI (Tl) single crystals, similar to phi 100 mm x 350 mm, have been grown successfully, and this CsI(Tl) coupled with PD has been successfully utilized at RIBLL (the Radioactive Ion Beam Line in Lanzhou) to measure the energy of heavy ions as a stopping detector. The performances of CsI(Tl) detector coupled with PD and APD have been tested and compared, including the temperature dependence of scintillating light yield

Angular dispersion and deflection function for heavy ion elastic scattering

The differential cross sections for elastic scattering products of F-17 on Pb-208 have been measured. The angular dispersion plots of ln(d sigma/d theta) versus theta(2) are obtained from the angular distribution of the elastic scattering differential cross sections. Systematical analysis on the angular dispersion for the available experimental data indicates that there is an angular dispersion turning angle at forward angular range within the grazing angle. This turning angle can be clarified as nuclear rainbow in classical deflection function. The exotic behaviour of the nuclear rainbow angle offers a new probe to investigate the halo and skin phenomena.

Temperature effects of CsI(Tl) crystal detector with APD readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source.

Elastic scattering angular dispersion of weakly bound nucleus F-17

The differential cross-sections for elastic scattering of F-17 and O-17 on Pb-208 have been measured at Radioactive Ion Beam Line at Lanzhou (RIBLL). The variation of the logarithms of differential cross-sections with the square of scattering angles, viz. angulax dispersion plot, shows clearly that there exists a turning point in the range of small scattering angles (6 degrees-20 degrees) for F-17 due to its exotic structure, while no turning point was observed for O-17. The experimental results have been compared with previous data of other groups. Systematical analysis on the available data seems to conclude that there is an exotic behavior of elastic scattering angular dispersion of weakly bound nuclei with halo or skin structure as compared with that of the stable nuclei. Therefore the fact that the turning point of the elastic scattering angular dispersion plot appears at small angle for weakly bound nuclei can be used as a new probe to investigate the halo and skin phenomenon.

Exotic behavior of elastic scattering differential cross-sections of weakly bound nucleus F-17 at small angles

The differential cross-sections for elastic scattering of F-17 and O-17 on Pb-208 have been measured at Radioactive Ion Beam Line at Lanzhou (RIBLL). The variation of the logarithms of differential cross-sections with the square of scattering angles shows clearly that there exists a turning point in the range of small scattering angles (6 degrees-20 degrees) for F-17 having exotic structure, while no turning point was observed in the O-17 elastic scattering. The experimental results have been compared with previous data. Systematical analysis on the available data seems to conclude that there is an exotic behavior of elastic scattering differential cross-sections of weakly bound nuclei with halo or skin structure as compared with that of the ordinary nuclei near stable line. Therefore the fact that the turning point of the logarithms of differential cross-sections appears at small angle for weakly bound nuclei could be used as a new probe to investigate the halo and skin phenomenon.