897 resultados para Laser-diode-array pumping
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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La realizzazione di stati non classici del campo elettromagnetico e in sistemi di spin è uno stimolo alla ricerca, teorica e sperimentale, da almeno trent'anni. Lo studio di atomi freddi in trappole di dipolo permette di avvicinare questo obbiettivo oltre a offrire la possibilità di effettuare esperimenti su condesati di Bose Einstein di interesse nel campo dell'interferometria atomica. La protezione della coerenza di un sistema macroscopico di spin tramite sistemi di feedback è a sua volta un obbiettivo che potrebbe portare a grandi sviluppi nel campo della metrologia e dell'informazione quantistica. Viene fornita un'introduzione a due tipologie di misura non considerate nei programmi standard di livello universitario: la misura non distruttiva (Quantum Non Demolition-QND) e la misura debole. Entrambe sono sfruttate nell'ambito dell'interazione radiazione materia a pochi fotoni o a pochi atomi (cavity QED e Atom boxes). Una trattazione delle trappole di dipolo per atomi neutri e ai comuni metodi di raffreddamento è necessaria all'introduzione all'esperimento BIARO (acronimo francese Bose Einstein condensate for Atomic Interferometry in a high finesse Optical Resonator), che si occupa di metrologia tramite l'utilizzo di condensati di Bose Einstein e di sistemi di feedback. Viene descritta la progettazione, realizzazione e caratterizzazione di un servo controller per la stabilizzazione della potenza ottica di un laser. Il dispositivo è necessario per la compensazione del ligh shift differenziale indotto da un fascio laser a 1550nm utilizzato per creare una trappola di dipolo su atomi di rubidio. La compensazione gioca un ruolo essenziale nel miglioramento di misure QND necessarie, in uno schema di feedback, per mantenere la coerenza in sistemi collettivi di spin, recentemente realizzato.
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We demonstrated all-fiber amplification of 11 ps pulses from a gain-switched laser diode at 1064 nm. The diode was driven at a repetition rate of 40 MHz and delivered 13 µW of fiber-coupled average output power. For the low output pulse energy of 325 fJ we have designed a multi-stage core pumped pre-amplifier in order to keep the contribution of undesired amplified spontaneous emission as low as possible. By using a novel time-domain approach for determining the power spectral density ratio (PSD) of signal to noise, we identified the optimal working point for our pre-amplifier. After the pre-amplifier we reduced the 40 MHz repetition rate to 1 MHz using a fiber coupled pulse-picker. The final amplification was done with a cladding pumped Yb-doped large mode area fiber and a subsequent Yb-doped rod-type fiber. With our setup we reached a total gain of 73 dB, resulting in pulse energies of >5.6 µJ and peak powers of >0.5 MW. The average PSD-ratio of signal to noise we determined to be 18/1 at the output of the final amplification stage.
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We present simulation results on how power output-input characteristic Instability in Distributed FeedBack -DFB semiconductor laser diode SLA can be employed to implemented Boolean logic device. Two configurations of DFB Laser diode under external optical injection, either in the transmission or in the reflective mode of operation, is used to implement different Optical Logic Cells (OLCs), called the Q- and the P-Device OLCs. The external optical injection correspond to two inputs data plus a cw control signal that allows to choose the Boolean logic function to be implement. DFB laser diode parameters are choosing to obtain an output-input characteristic with the values desired. The desired values are mainly the on-off contrast and switching power, conforming shape of hysteretic cycle. Two DFB lasers in cascade, one working in transmission operation and the other one in reflective operation, allows designing an inputoutput characteristic based on the same respond of a self-electrooptic effect device is obtained. Input power for a bit'T' is 35 uW(70uW) and a bit "0" is zero for all the Boolean function to be execute. Device control signal range to choose the logic function is 0-140 uW (280 uW). Q-device (P-device)
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Laser Diodes have been employed many times as light sources on different kinds of optical sensors. Their main function in these applications was the emission of an optical radiation impinging onto a certain object and, according to the characteristics of the reflected light, some information about this object was obtained. Laser diodes were acting, in a certain way, just as passive devices where their only function was to provide the adequate radiation to be later measured and analyzed. The objective of this paper is to report a new concept on the use of laser diodes taking into account their optical bistable properties. As it has been shown in several places, different laser diodes as, for example, DFB lasers and FP lasers, offer bistable characteristics being these characteristics a function of different parameters as wavelength, light polarization or temperature. Laser Bistability is strongly dependent on them and any small variation of above parameters gives rise to a strong change in the characteristics of its non-linear properties. These variations are analyzed and their application in sensing reported. The dependence on wavelength, spectral width, input power and phase variations, mainly for a Fabry-Perot Laser structure as basic configuration, is shown in this paper.
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Conventional detection scheme for self-mixing sensors uses an integrated photodiode within the laser package to monitor the self mixing signal. This arrangement can be simplified by directly obtaining the self-mixing signals across the laser diode itself and omitting the photodiode. This work reports on a Vertical-Cavity Surface-Emitting Laser (VCSEL) based selfmixing sensor using the laser junction voltage to obtain the selfmixing signal. We show that the same information can be obtained with only minor changes to the extraction circuitry leading to potential cost saving with reductions in component costs and complexity and significant increase in bandwidth favoring high speed modulation. Experiments using both photo current and voltage detection were carried out and the results obtained show good agreement with the theory.
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Efficient suppression of relaxation oscillations in the output signal from an overdriven gain-switched laser diode was demonstrated. Several quantum-well distributed feedback laser diodes from different manufacturers were used for experimental analysis. A five-fold increase in the peak power was achieved for the tail-free operation. It was found that spectral filtering removed the nonlinearly chirped components resulting in pulse shortening by a factor of three.
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We report on the problems encountered when replacing a tungsten filament lamp with a laser diode in a set-up for displaying Talbot bands using a diffraction grating. It is shown that the band pattern is rather complex and strong interference signals may exist in situations where Talbot bands are not normally expected to appear. In these situations, the period of the bands increases with the optical path difference (OPD). The visibility of bands as dependence on path imbalance is obtained by suitably obstructing halfway into the arms of a Michelson interferometer using opaque screens.
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Interferometric sensors for slowly varying measurands, such as temperature or pressure, require a long term frequency stability of the source. We describe a system for frequency locking a laser diode to an atomic transition in a hollow cathode lamp using the optogalvanic effect.
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Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.
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We report on the problems encountered when replacing a tungsten filament lamp with a laser diode in a set-up for displaying Talbot bands using a diffraction grating. It is shown that the band pattern is rather complex and strong interference signals may exist in situations where Talbot bands are not normally expected to appear. In these situations, the period of the bands increases with the optical path difference (OPD). The visibility of bands as dependence on path imbalance is obtained by suitably obstructing halfway into the arms of a Michelson interferometer using opaque screens.
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We demonstrate experimentally a novel and simple tunable all-optical incoherent negative-tap fiber-optic transversal filter based on a distribution feedback laser diode and high reflection fiber Bragg gratings (FBGs). In this filter, variable time delay is provided by cascaded high reflection fiber Bragg gratings (FBGs), and the tuning of the filter is realized by tuning different FBG to match the fixed carrier wavelength, or adjusting the carrier wavelength to fit different FBG. The incoherent negative tapping is realized by using the carrier depletion effect in a distribution feedback laser diode.
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The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.