Theoretical investigation of turbulent boundary layer over a wavy surface

The important features of the two-dimensional incompressible turbulent flow over a wavy surface of wavelength comparable with the boundary layer thickness are analyzed.

A turbulent field method using model equation for turbulent shear stress similar to the scheme of Bradshaw, Ferriss and Atwell (1967) is employed with suitable modification to cover the viscous sublayer. The governing differential equations are linearized based on the small but finite amplitude to wavelength ratio. An orthogonal wavy coordinate system, accurate to the second order in the amplitude ratio, is adopted to avoid the severe restriction to the validity of linearization due to the large mean velocity gradient near the wall. Analytic solution up to the second order is obtained by using the method of matched-asymptotic-expansion based on the large Reynolds number and hence the small skin friction coefficient.

In the outer part of the layer, the perturbed flow is practically "inviscid." Solutions for the velocity, Reynolds stress and also the wall pressure distributions agree well with the experimental measurement. In the wall region where the perturbed Reynolds stress plays an important role in the process of momentum transport, only a qualitative agreement is obtained. The results also show that the nonlinear second-order effect is negligible for amplitude ratio of 0.03. The discrepancies in the detailed structure of the velocity, shear stress, and skin friction distributions near the wall suggest modifications to the model are required to describe the present problem.

Layer uniformity of glancing angle deposition

Some results of an investigation on the layer thickness uniformity of glancing angle deposition are presented. A zirconia monolayer has been deposited by glancing angle deposition to analyze the layer thickness uniformity. The experimental results indicate that the thickness variation over the substrate is less than 0. 1%, which is considered as good uniformity. It is found that the non-uniformity of experimental results is larger than that of the theoretical results. (c) 2005 Elsevier Ltd. All rights reserved.

Micro-ramp control for oblique shock wave / boundary layer interactions

Supersonic engine intakes operating supercritically feature shock wave / boundary layer interactions (SBLIs), which are conventionally controlled using boundary layer bleed. The momentum loss of bleed flow causes high drag, compromising intake performance. Micro-ramp sub-boundary layer vortex generators (SBVGs) have been proposed as an alternative form of flow control for oblique SBLIs in order to reduce the bleed requirement. Experiments have been conducted at Mach 2.5 to characterise the flow details on such devices and investigate their ability to control the interaction between an oblique shock wave and the naturally grown turbulent boundary layer on the tunnel floor. Micro-ramps of four sizes with heights ranging from 25% to 75% of the uncontrolled boundary layer thickness were tested. The flow over all sizes of microramp was found to be similar, featuring streamwise counter-rotating vortices which entrain high momentum fluid, locally reducing the boundary layer displacement thickness. When installed ahead of the shock interaction it was found that the positioning of the micro-ramps is of limited importance. Micro-ramps did not eliminate flow separation. However, the previously two-dimensional separation was broken up into periodic three-dimensional separation zones. The interaction length was reduced and the pressure gradient across the interaction was increased.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

Can fundamental shock-wave/boundary-layer interaction research be relevant to inlet aerodynamics?

The important influence of shock waves on supersonic inlet performance has led to much time and effort being expended in the area of shock wave/boundary layer interaction research (SWBLI) and SWBLI control. In this short review, the impact of SWBLIs on supersonic inlet aerodynamic research is discussed and is contrasted with fundamental SWBLI research. Inlet research focussed on internal flow performance is reviewed, based on the salient results, conclusions, and the limitations of such work. The role of fundamental SWBLI research in relation to supersonic inlet research is considered, and the possible positive impact of improving the link between fundamental SWBLI research and inlet design is considered. A simple flow-field is discussed which is thought to be able to simulate at least some more of the flow physics found in a typical inlet. A brief review of real inlet parameters is then given to help determine appropriate fundamental experimental parameters such as incoming Mach number, incoming boundary-layer thickness and subsonic difiuser angle. Copyright © 2012 by N. Titchener, H. Babinsky, and E. Loth.

The effect of wind tunnel size on incident shock boundary layer in-teraction experiments

We examine the effects of varying the tunnel width to height ratio on the shock boundary layer interac-tion of an incident oblique shock with a turbulent boundary layer. The computational domain is a simpli-fied representation of typical wind tunnel experiments; the top wall of the tunnel is not modeled; only the flow conditions imposed by the shock are modeled on the top of the computational domain. A hy-pothesis of the expected effect of width to height ratio is presented and tested computationally. All flows are found to be three dimensional for the single shock strength range of width to height ratios considered. The effect of tunnel width is a function of the boundary layer thickness which decreases the effective width.

Mode Characteristics for Square Resonators With a Metal Confinement Layer

Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells

InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.

Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE

We describe the growth of GaN on Si (111) substrates with a AlGaN/AlN buffer layer by NH3-GSMBE. The influence of the AlN and AlGaN buffer layer thickness on the crack density of GaN has been investigated. It is found that the optimum thickness is 120 nm and 250 nm for AlN and AlGaN layers, respectively. The full width at half maximum of the GaN (0002) peak in the triple-crystal x-ray rocking curve measurement is about 15 arcmin.

The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE

We describe the growth of GaN on Si(111) substrates with AlxGa1-xN/AlN buffer layer by ammonia gas source molecular beam epitaxy (NH3-GSMBE). The influence of the AlN and AlxGa1-xN buffer layer thickness and the Al composition on the crack density of GaN has been investigated. It is found that the optimum thickness is 120 and 250 nm for AlN and AlxGa1-xN layers, respectively. The optimum Al composition is between 0.3 < x < 0.6. (c) 2005 Elsevier B.V. All rights reserved.

Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells

In-x Ga1-xN/GaN multiple quantum well (MQW) samples with strain-layer thickness lager/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations.

The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

To fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-Al-composition AlGaN (Al content > 50%) films with reduced dislocation densities must be developed. This paper describes the growth of high-Al-composition AlGaN film on (0001) sapphire via a LT AIN nucleation layer by low pressure metalorganic chemical vapor deposition (LPMOCVD). The influence of the low temperature AIN buffer layer thickness on the high-Al-content AlGaN epilayer is investigated by triple-axis X-ray diffraction (TAXRD), scanning electron microscopy (SEM), and optical transmittance. The results show that the buffer thickness is a key parameter that affects the quality of the AlGaN epilayer. An appropriate thickness results in the best structural properties and surface morphology. (c) 2006 Elsevier B.V. All rights reserved.

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer

COMPARISON BETWEEN THE INFLUENCES OF LAYER THICKNESSES AND ALAS MOLE FRACTION-X ON VERTICAL-CAVITY SURFACE-EMITTING LASERS

Based on the n(x, lambda), the calculation of the reflection spectrum for vertical cavity surface emitting lasers shows that the deviation of the central wavelength caused by the change of layer thickness is much more than that caused by the change of AlAs mole fractions. Therefore the control of the MBE growth rate is very important.

STUDY OF RAMAN-SPECTRA OF ZNSE-ZNTE STRAINED LAYER SUPERLATTICES

The Raman spectra of the II-VI wide band-gap compound ZnSe-ZnTe semiconductor strained-layer superlattices have been studied. The relations between the Raman shifts of the longitudinal optical phonon modes and the superlattice-structure parameters have been determined. When the layer thickness exceeds 40 angstrom, the change of the LO phonon-mode frequency shifts with the layer thickness is minimal, whereas when the layer thickness is smaller than 40 angstrom, great shifts have been observed. We estimate that the critical thickness of ZnSe-ZnTe SLS is about 40 angstrom. We have also found that the shifts induced by strain are much larger than the red shifts due to confinement.