High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

A high-efficiency high-power evanescently coupled UTC-photodiode

The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier(UTC)photodiode structures are reported. Two kinds of evanescently coupled uni-traveling carrier photodiodes(EC-UTC-PD)were designed and characterized: one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD; and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together. The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method, and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.

Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.

High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity

An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.

An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability

A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.

High tech start-ups in University Science Park incubators: The relationship between the start-up’s lifecycle progression and use of the incubator’s resources

University Science Park incubators (USIs) have emerged as a means by which Government, academia and business can develop high technology business firms (spin out HTBFs) from initial conception through to becoming established small firms, which are ready to move beyond the Science Park confines. Although there is considerable literature on how USIs can be improved and developed there is a paucity of studies, which explore how lifecycle development within HTBFs in USIs can affect how they use the unique resources and opportunities of the USI. Moreover, there is a focus on single point in time studies, which do not adequately investigate the longitudinal dynamics of HTBF lifecycle development within USIs. Therefore, the aim of this paper is to explore the longitudinal use of the unique resources of the USI by HTBFs at different lifecycle stages. The research methodology involved 18 HTBFs within two separate USIs. A series of longitudinal interviews and focus groups were conducted with HTBFs and USI staff over a 36-month period. NUD*IST software was used in developing the coding and analysis of transcripts. The results show that a HTBF's propensity to make effective use of the USI's resources and support increases as the lifecycle stage of the company increases and the small-firm searches for independence and autonomy. Therefore, further research is required to investigate the following two outstanding questions; firstly, which usage pattern is associated with the HTBF's ultimate success or failure in the marketplace? And secondly, are there any services missing from the observed array that the USI could provide to enhance the HTBF's degree of ultimate success? © 2007 Elsevier Ltd. All rights reserved.

Development of a model to create entrepreneurial technology businesses

A unique technology business creation model called "Mentrix Model" was created which achieved above 85% success using state of the art selection tools. Based upon the author's research and experience in establishing the world class Australian Technology Park in Sydney, Australia and the extension to the prestigious OptixLab in Malaysia.

American technology policy: evolving strategic interests after the Cold War

Since the end of the Cold War, U.S. policymakers have faced the challenge of addressing the technological requirements of both economic competitiveness and national security. Promoting the technological objectives of competitiveness and security poses a daunting task, as these objectives can differ significantly in terms of autonomy, the private sector’s role, and the time frame involved. The difficulties inherent in meeting these competing needs for technological investment and resources are exacerbated by growing technological globalization. American Technology Policy analyzes the ongoing efforts of politicians, legislators, policymakers, and industry leaders to balance their often-conflicting technological requirements. J. D. Kenneth Boutin examines recent trends and developments in American technology policy as it strives to support high-technology firms without undermining national security. He then considers issues of autonomy, relations between the federal government and industry, and the time frame involved in formulating and implementing policy initiatives, all in the context of globalization. Though satisfying the ambitious American technological agenda is difficult, it is impossible for authorities to avoid making the effort, given the high stakes involved. Boutin’s analysis is intended to inform those who are charged with prioritizing and balancing the technological needs of national defense and economic growth. Although the post–Cold War technology policy of the United States has been characterized by efforts to achieve a balance between these two competing priorities, the dominant focus remains on national security. Boutin explains the ways in which American authorities seek to limit the extent of compromise necessary by working with local and foreign actors and by encouraging structural changes in the environment for technological development, application, and diffusion.

Seed size and genotype effects on maize (Zea mays L.) yield under different technology levels

Final plant population in maize crop was used as a basis to identify the technology level of a given farmer. Final population of 50,000 plants/hectare was considered as an indication of a high technology level farmer; 35,000 of a medium, and 20,000 of a low technology level farmer. These populations were artificially obtained for the hybrids HT-2X, BR-201, and BR-205 from small, medium and large seeds. The results showed the triple cross hybrid HT-2X to be the most indicated for low technology level regions, due to its lesser sensitivity to variations in seed size and also to its significant outyielding of the other two hybrids. The double cross hybrids BR-201 and BR-205 exhibited much higher sensitivity to variations in seed size so that if they have to be used in a low technology region, the most recommended procedure would be to make use of the largest possible seeds. In conclusion, genotype and seed size seem to be factors capable of compensating for plant population reductions in maize crops. The more prolific hybrids and the largess seeds are more indicated for low technology level regions.

Evaluation of neighborhood impacts caused by companies of the high-tech industrial cluster of São Carlos, SP, Brazil

The purpose of this study was to develop a methodology for evaluating neighborhood impacts using a Geographic Information System (GIS) and to apply the procedures to the companies of the High-Technology Industrial Cluster of São Carlos. To this end, an evaluation was made of the neighborhood impacts on the physical environment, urban components, quality of life, and urban infrastructure using impact matrices, and the impacts were assigned scores according to type, order, magnitude and duration. Fifty one companies were examined based on data provided by the companies themselves and on field surveys. The impacts are represented spatially in proportional symbols maps, based on the spatial distribution of the companies in the urban area of the city of São Carlos and the areas of influence of each company. The application of the proposed methodology served to validate it and indicated that the neighborhood impacts caused by the companies of this study are related to each company's type of activity, its size, and its occupation of the area. © 2008 Journal of Urban and Environmental Engineering (JUEE). All rights reserved.

Entrepreneurship in a Hub-and-Spoke Industrial District: Firm Survey Evidence from Seattle's Technology Industry

Mayer H. Entrepreneurship in a hub-and-spoke industrial district: firm survey evidence from Seattle's technology industry, Regional Studies. The paper investigates entrepreneurial dynamics in a hub-and-spoke industrial district. Using data on the genealogy of high-technology firms in Seattle, Washington State, the study examines the ways in which entrepreneurial firms relate to their parent firms and the role of agglomeration economies. The results illustrate that entrepreneurship is an important vehicle for the diversification of such a district. When compared, hub-related spinoffs such as those founded by former Microsoft employees do not differ much from other start-ups. The differences between Microsoft spinoffs and start-ups are very limited; both diversify the regional economy by entering new markets when compared with their parents.

Firm Building and Entrepreneurship in Second-Tier High-Tech Regions

This paper examines how a second-tier high-technology region leveraged corporate assets—mostly from transnational firms—in building a knowledge-based economy. The paper reviews how firm building and entrepreneurship influence the evolution of a peripheral regional economy. Using a case study of Boise, Idaho (the US), the research highlights several important sources of entrepreneurship. Entrepreneurial firm formation is closely linked with a region's ability to grow incubator organizations, particularly innovative firms. These innovative firms provide the training ground for entrepreneurs. Firms, however, differ and the ways in which firm building activities influence regional entrepreneurship depend on firm strategy and organization. Thus, second-tier high-tech regions in the US are taking a different path than their well-known counterparts such as Silicon Valley or Route 128 around Boston.

Segmentation and Segregation Patterns of Women-Owned High-Tech Firms in Four Metropolitan Regions in the United States

Mayer H. Segmentation and segregation patterns of women-owned high-tech firms in four metropolitan regions in the United States, Regional Studies. The number of women starting and owning a business has increased dramatically and female entrepreneurs are entering non-traditional sectors such as high technology, construction and manufacturing. This paper investigates the trends in high-tech entrepreneurship by women in four US metropolitan regions (Silicon Valley, California; Boston, Massachusetts; Washington, DC; and Portland, Oregon). The research examines the sectoral and spatial segmentation patterns of women-owned high-tech firms. Although women are entering non-traditional sectors, the research finds that women entrepreneurs tend to own businesses in female-typed high-tech sectors. In established high-tech regions like Silicon Valley and Boston, male-typed and female-typed women-owned high-tech firms differ significantly in terms of sectoral and spatial segmentation regardless of firm age. While differences between male-typed and female-typed firms are not significant at the regional level for Washington, DC, the analysis shows significant intra-metropolitan differences for the female-typed high-tech firms. The paper concludes that sectoral and spatial segmentation are powerful dynamics that shape business ownership by women in high technology.