Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate

Sharp and strong room-temperature photoluminescence (PL) of the Si0.59Ge0.41/Si multiquantum wells grown on the silicon-on-insulator substrate is investigated. The cavity formed by the mirrors at the surface and the buried SiO2 interface enhances the PL emission and has a wavelength-selective effect on the luminescence. The peak position is consistent with the simulation result and independent of the exciting power, which indicates a strong cavity effect on the room-temperature PL. (C) 2004 American Institute of Physics.

Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m

The authors report the effects of rapid thermal annealing (RTA) on the emission properties of highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mu m grown on GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N-2 flow at temperatures ranging from 600 to 900 degrees C for 30 s using GaAs proximity capping. Surprisingly, in spite of the capping, large blueshifts in the emission peak (up to about 380 meV at 850 degrees C) were observed (even at low annealing temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced peak broadenings occurred at low annealing temperatures (< 700 degrees C), indicating that RTA does not always cause peak narrowing, as is typically observed with traditional QDs with large inhomogeneous PL linewidths. The mechanism behind the large peak blueshift was studied and found to be attributed to the as-grown QDs with large size, which cause a larger dot-barrier interface and greater strain in and near the QD regions, thereby greatly promoting Ga-In intermixing across the interface during RTA. The results reported here demonstrate that it is possible to significantly shift the emission peak of the QDs by RTA without any additional procedures, even at lower annealing temperatures. (c) 2007 American Institute of Physics.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

Cooperative spontaneous emission of excitons in the semiconductor microcavity

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

A soluble nonionic surfactant as electron injection material for high-efficiency inverted bottom-emission organic light emitting diodes

A soluble nonionic surfactant, polyethylenimine 80% ethoxylated (PEIE) solution, was used as the electron injection material in inverted bottom-emission organic light emitting diodes (OLEDs). The transparent PEIE film was formed on indium-tin-oxide cathode by simple spin-coating method and it was found that the electron injection was greatly enhanced. The devices with PEIE electron injection layer had achieved significant enhancement in luminance and efficiency. The maximum luminance reached 47 000 cd/m(2), and the maximum luminance efficiency and power efficiency arrived at 19.7 cd/A and 10.6 lm/W, respectively.

Enhanced luminescence of BPO4 by mixing with SiO2 and Al2O3

In this paper, BPO4-xSiO(2) (X: SiO2/BPO4 molar ratio, 0-70%) and BPO4-xAl(2)O(3) (X: Al2O3/BPO4 molar ratio, 0-20%) powder samples were prepared by the Pechini-type sol-gel (PSG) process using glycerol and poly(ethylene glycol) as additives. The structure and optical properties of the resulting samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, field emission scanning electron microscopy (FESEM), diffuse reflection spectra, photoluminescence (PL) excitation and emission spectra, kinetic decay, and X-ray photoelectron spectra (XPS), respectively. It was found that the Pechini-type sol-gel-derived BPO4-xSiO(2) annealed at 1000 degrees C and BPO4-xAl(2)O(3) annealed at 960 degrees C exhibited bright bluish-white emissions centered at 428 and 413 nm, respectively. The luminescence decay curve analysis indicates that each sample has two kinds of lifetimes (more than 0.4 ms and less than 10 ns) and two types of kinetic decay behaviors, which can be fitted into a double-exponential function and a single-exponential function, respectively.

Electrochemical preparation of silver nanostructure on the planar surface for application in metal-enhanced fluorescence

We introduce a fast and simple method, named the potentiostatic electrodeposition technique, to deposit metal particles on the planar surface for application in metal-enhanced fluorescence. The as-prepared metallic surfaces were comprised of silver nanostructures and displayed a relatively homogeneous morphology. Atomic force microscopy and UV-visible absorption spectroscopy were used to characterize the growth process of the silver nanostructures on the indium tin oxide (ITO) surfaces. A typical 20-fold enhancement in the intensity of a nearby fluorophore, [Ru(bpy)(3)](2+), could be achieved on the silvered surfaces. In addition, the photostability of [Ru(bpy)(3)](2+) was found to be greatly increased due to the modification of the radiative decay rate of the fluorophore. It is expected that this electrochemical approach to fabricating nanostructured metallic surfaces can be further utilized in enhanced fluorescence-based applications.

Enhanced photoluminescence of Ba2GdNbO6: Eu3+/Dy3+ phosphors by Li+ doping

The Ba2GdNbO6: Eu3+/Dy3+ and Li+-doped Ba2GdNbO6: Eu3+/Dy3+ phosphors were prepared by solid-state reaction process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and photoluminescence (PL) as well as lifetimes, was utilized to characterize the resulting phosphors. Under the excitation of ultraviolet light, the Ba2GdNbO6: Eu3+/Dy3+ and Li+-doped Ba2GdNbO6: Eu3+/Dy3+ show the characteristic emissions of Eu3+ (D-5(0)-F-7(1,2,3) transitions dominated by D-5(0)-F-7(1) at 593 nm) and Dy3+ (F-4(9/2)-H-6(15/2),(13/2) transitions dominated by F-4(9/2)-H-6(15/2) at 494 nm), respectively. The incorporation of Li+ ions into the Ba2GdNbO6: Eu3+/Dy3+ phosphors has enhanced the PL intensities depending on the doping concentration of Li+, and the highest emission was obtained in Ba2Gd0.9NbO6: 0.10Eu(3+), 0.01Li(+) and Ba2Gd0.95NbO6: 0.05Dy(3+), 0.07Li(+), respectively. An energy level diagram was proposed to explain the luminescence process in the phosphors.

White electroluminescence from a single polymer system: Improved performance by means of enhanced efficiency and red-shifted luminescence of the blue-light-emitting species

High-efficiency white electrolurninescence from a single polymer is achieved by enhancing the electroluminescence efficiency and effecting a red-shift in the emission spectrum of the blue emissive species. A single-layer device of the resultant polymer exhibits a higher luminous efficiency than the nonmodified species (12.8 cd A(-1), see figure) and an external quantum efficiency of 5.4 % with CIE coordinates of (0.31,0.36), exemplifying the success of the reported methodology.

Enhanced toxicity of ‘bulk' titanium dioxide compared to ‘fresh' and ‘aged' nano-TiO2in marine mussels (Mytilus galloprovincialis)

Marine bivalves (Mytilus galloprovincialis) were exposed to titanium dioxide (10 mg L-1) either as engineered nanoparticles (nTiO(2); fresh, or aged under simulated sunlight for 7 days) or the bulk equivalent. Inductively coupled plasma-optical emission spectrometry analyses of mussel tissues showed higher Ti accumulation (>10-fold) in the digestive gland compared to gills. Nano-sized TiO2 showed greater accumulation than bulk, irrespective of ageing, particularly in digestive gland (>sixfold higher). Despite this, transcriptional expression of metallothionein genes, histology and histochemical analysis suggested that the bulk material was more toxic. Haemocytes showed significantly enhanced DNA damage, determined by the modified comet assay, for all treatments compared to the control, but no significant differences between the treatments. Our integrated study suggests that for this ecologically relevant organism photocatalytic ageing of nTiO(2) does not significantly alter toxicity, and that bulk TiO2 may be less ecotoxicologically inert than previously assumed.

Light emission from scanning tunnelling microscope on polycrystalline Au films - what is happening at the single-grain level?

When operated with a metallic tip and sample the scanning tunnelling microscope constitutes a nanoscale, plasmonic light source yielding broadband emission up to a photon energy determined by the applied bias. The emission is due to tunnelling electron excitation and subsequent radiative decay of localized plasmon modes, which can be on the lateral scale of a single metal grain (similar to 25 nm) or less. For a Au-tip/Au-polycrystalline sample under ambient conditions it is found that the intensity and spectral content of the emitted light are not dependent on the lateral grain dimension, but are predominantly determined by the tip geometry. However, the intensity increases strongly with increasing film thickness (grain depth) up to 20-25 nm or approximately the skin depth of the Au film. Photon maps can show less emissive grains and two classes of this occurrence are distinguished. The first is geometrical in origin - a double-tip structure in this case - while the second is due to a contamination-induced lowering of the local work function that causes the tunnel gap to increase. It is suggested that differences in work-function lowering between grains presenting different crystalline facets, combined with an exponential decay in emitted light intensity with tip - sample distance, leads to grain contrast. These results are relevant to tip-enhanced Raman scattering and the fabrication of micro/nano-scale planar, light-emitting tunnel devices.

Experimental investigation of the processes determining x-ray emission intensities from charge-exchange collisions

Absolute cross sections have been measured for single and double charge exchange and x-ray line emission for highly charged ions of C, N, 0, and Ne colliding with He, H-2 CO2, and H2O at collisions energies of 7q keV. Present results of charge exchange in He and H-2 compare favorably with previous results. For CO2 and H2O, where prior work is scarce, the classical overbarrier model is found to overestimate results by up to a factor of 3. An analysis of the relative intensities of the observed Lyman x-ray transitions indicates that capture into l states is not statistical, as collision velocities are insufficient to populate the highest angular-momentum states. The importance of autoionization following multiple capture is highlighted, and enhanced radiative stabilization following double capture is observed and compared to other studies. Present results are also discussed in terms of mechanisms likely to generate x-ray emission in comets.

Density-Enhanced Gas and Dust Shells in a New Chemical Model for IRC+10216

A new chemical model is presented for the carbon-rich circumstellar envelope (CSE) of the asymptotic giant branch star IRC+10216. The model includes shells of matter with densities that are enhanced relative to the surrounding circumstellar medium. The chemical model uses an updated reaction network including reactions from the RATE06 database and a more detailed anion chemistry. In particular, new mechanisms are considered for the formation of CN-, C3N-, and C2H-, and for the reactions of hydrocarbon anions with atomic nitrogen and with the most abundant cations in the CSE. New reactions involving H- are included which result in the production of significant amounts of C2H- and CN- in the inner envelope. The calculated radial molecular abundance profiles for the hydrocarbons C2H, C4H, and C6H and the cyanopolyynes HC3N and HC5N show narrow peaks which are in better agreement with observations than previous models. Thus, the narrow rings observed in molecular microwave emission surrounding IRC+10216 are interpreted as arising in regions of the envelope where the gas and dust densities are greater than the surrounding circumstellar medium. Our models show that CN- and C2H- may be detectable in IRC+10216 despite the very low theorized radiative electron attachment rates of their parent neutral species. We also show that magnesium isocyanide (MgNC) can be formed in the outer envelope through radiative association involving Mg+ and the cyanopolyyne species.