Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions

A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.

RESEARCH ON ELECTRICAL-PROPERTIES OF AMPHIPHILIC LIPID-MEMBRANES BY MEANS OF INTERDIGITAL ELECTRODES

Lipids are the main component of all cell membranes and also important mimetic materials. Moreover, it was found recently that they can be used as sensitive membranes for olfactory and taste sensors. Hence the understanding of lipid resistance is important both in sensors and in life sciences. Thirteen lipids were examined by means of interdigital electrodes with narrow gaps of 20-50 mu m, made by IC technology. The membrane lateral resistance in air, resisting electrical voltage, the influence of impurities on resistance and the resistance change in acetic acid vapour are presented for the first time. It is shown that the electrical resistivity for self-assembling lipids depends on their duration of being in an electric field and the content of the conductive impurities. The interdigital electrode is a transducer as well as a powerful tool for researching biomaterials and mimicking materials. The conducting mechanism of lipids is discussed. This method is also suitable for some polymer membranes.

Optical and Electrical Properties of GaN.Mg Grown by MOCVD

Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature （RT） Hall and photoluminescence （PL） spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV （BL） and the ultraviolet emission band is around 3.27eV （UVL）. The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural characterization, stability and electrical properties of strontium niobate ceramic

The double perovskite oxide Sr2CrNbO6 has a cubic structure according to powder X-ray diffraction. After reducing in CO, Sr2CrNbO6 still exhibited a cubic structure refined by Rietveld technique. The TG analysis indicated that Sr2CrNbO6 loses 0.127 oxygen per formula unit from 400 to 700 degrees C in H-2. The morphology and compositions of this ceramic did not significantly change on reduction

Preparation and electrical properties of new oxide ion conductors Ce6-xDyxMoO15-delta (0.0 <= x <= 1.8)

Ce6-xDyxMoO15-delta (0.0 <= x <= 1.8) were synthesized by modified sol-gel method. Structural and electrical properties were investigated by means of X-ray diffraction (XRD), Raman, X-ray photoelectron spectroscopy (XPS) and electrochemical impedance spectroscopy (EIS). The XRD patterns showed that the materials were single phase with a cubic fluorite structure. Impedance spectroscopy measurement in the temperature range between 350 degrees C and 800 degrees C indicated a sharp increase in conductivity for the system containing small amount of Dy2O3. The Ce5.6Dy0.4MoO15-delta detected to be the best conducting phase with the highest conductivity (sigma(t) = 8.93 x 10(-3) S cm(-1)) is higher than that of Ce5.6Sm0.4MoO15-delta (sigma(t) = 2.93 x 10(-3) S cm(-1)) at 800 degrees C, and the corresponding activation energy of Ce5.6Dy0.4MoO15-delta (0.994 eV) is lower than that of Ce5.6Sm0.4MoO15-delta (1.002 eV).

Synthesis of Titanate-Based Nanotubes for One-Dimensionally Confined Electrical Properties

Structural tailoring for dimensionally confined electrical properties is fundamentally important for nanodevices and the relevant technologies. Titanate-based nanotubes were taken as a prototype one-dimensional material to study. First, Na0.96H1.04Ti3O7 center dot 3.42H(2)O nanotubes were prepared by a simple hydrothermal condition, which converted into Na0.036H1.964Ti3O7 center dot 3.52H(2)O nanotubes by a subsequent acidic rinsing. Systematic sample characterization using combined techniques of X-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy, electron paramagnetic resonance, Fourier transform infrared spectroscopy, elemental analyses, and alternative current impedance indicated that both nanotubes possessed a scrolled trititanate-type structure with the (200) crystal face predominant on the tube surface. With increasing temperature, both nanotubes underwent a continuous dehydration process, which however imposed different impacts oil the structures and electrical properties, depending on the types of the nanotubes

Preparation and Electrical Properties of New Oxide Ion Conductors Ce6-xGdxMoO15-delta (0.0 <= x <= 1.8)

A series of oxide ion conductors Ce6-xGdxMoO15-delta (0.0 <= x <= 1.8) have been prepared by the sol-gel method. Their properties were characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), Raman, IR, X-ray photoelectron spectroscopy (XPS), and AC impedance spectroscopy. The XRD patterns showed that the materials were single phase with a cubic fluorite structure. The conductivity of Ce6-xGdxMoO15-delta increases as x increases and reaches the maximum at x = 0.15. The conductivity of Ce4.5Gd1.5MoO15-delta is sigma(t) = 3.6 x 10(-3) S/cm at 700 degrees C, which is higher than that of Ce4.5/6Gd1.5/6O2-delta (sigma(t) = 2.6 x 10(-3) S/cm), and the corresponding activation energy of Ce4.5Gd1.5MoO15-delta (0.92 eV) is lower than that of Ce4.5/6Gd1.5/6O2-delta (1.18 eV).

Synthesis and Electrical Properties of New Solid State Electrolyte Materials Ce6-xHoxMoO15-delta(0.0 <= x <= 1.2)

Ce6-xHoxMoO15-delta(0.0 <= x <= 1.2) was synthesized by modified sol-gel method and characterized by differential X-ray diffraction(XRD), Raman, and X-ray photoelectron spectroscopy(XPS) methods. The oxide ionic conductivity of the samples was investigated by AC impedance spectroscopy. It shows that all the samples are single phase with a cubic fluorite structure. The solid solution Ce6-xHoxMoO15-delta(x=0.6) was detected to be the best conducting phase with the highest conductivity(sigma(t)=1.05x10(-2) S/cm) at 800 degrees C and the lowest activation energy(E-a=1.09 eV). These properties suggest that this kind of material has a potential application in intermediate-low temperature solid oxide fuel cells.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Structure and electrical properties of Pr ans Sm doped CeO2 and Ce2MoO15 based solid electrolytes

Sin and Pr doped CeO2 and Ce6MoO15 based materials were synthesized by sol-gel method. The structure of the powders were characterized by X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy(FE-SEM) and the electrical conductivity of the samples was investigated by AC impedance spectroscopy. By comparing the structure and electrical properties of different systems, it could be concluded that the electrical property of Ce6MoO15 based system is better than that of CeO2 system. The added Mo element resulted in the increase of gain size and improved the grain boundary conductivity notably below 600 degrees C, while the Pr dopant induced the smaller grain size and improved the grain boundary conductivity of the materials.

Effects of Pr dopant on grain boundary and electrical properties of Ce5.2Sm0.8MoO15-delta

Material formulated as Ce5.2Sm0.8-xPrxMo15-(delta) (x=0.08) was prepared by adding small amounts of Pr dopant in oxide Ce5.2SM0.8-xPrxMoO15-delta. Structural and electrical properties were investigated by means of X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and AC impedance spectroscopy. The effect of small amounts of Pr on microstructure and electrical conductivity was discussed. It was showed that the material doped with Pr has a lot of dents and small openings, which provide channels for oxygen ions, resulting in lower grain boundary and total conductivity activation energy. Thus the corresponding grain boundary conductivity and total conductivity of the material were improved notably. The grain boundary conductivity of the material doped with Pr is 6.79 X 10(-3) S center dot cm(-1) at 500 degrees C, which is twice as large as that without Pr (5.61 X 10(-5) S center dot cm(-1)).

Synthesis and electrical properties of new solid state. Electrolyte materials Ce5.2RE0.8MoO15-delta

A series of solid state electrolytes, Ce-5.2 RE0.8 MoO15-delta (RE = Y, La, Sm, Gd, Dy, Ho, Er), were synthesized by sol-gel method. Their structures and electrical conductivities were characterized by X-ray Diffraction (XRD), Raman and X-ray Photoelectron Spectroscopy (XPS) and AC impedance spectroscopy, respectively. The results show that the concentrations of oxygen vacancy increased with increasing x and their conductivity were improved. And the cell parameters increase as the radius of RE3+ increases. Because the ionic radius of doped Dy3+ (0.0908 nm) is closed to that of Ce4+ (0.0920 nm), their oxide has minimal cell elastic straining between RE3+ and oxygen vacancy, and the system has the least association enthalpy, thus the oxide Ce-5.2 Dy-0.8 MoO15-delta exhibits a higher conductivity (7.02 x 10(-3) S/cm) and lower activation energy (1.056 eV) compared to the other doped compounds.

Synthesis, characterization and electrical properties of solid state electrolyte materials La2-xCaxMo1.7W0.3O9-delta (0 <= x <= 0.2)

The new compounds La2-xCaxMo1.7W0.3O9-delta (0 <= x <= 0.2) in which La3+ substituted with Ca2+ were synthesized by dry-chemistry techniques based on the oxygen Ionic conductor La2Mo1.7W0.3O9. The new series were characterized by X-ray Diffraction (XRD), Raman and X-ray Photoelectron Spectroscopy (XPS) and the electrical conductivity of samples were investigated by AC impedance spectroscopy. The lattice parameters were reduced due to the smaller atomic radius of the Ca2+ compared with that of the La3+. Furthermore, Additional oxygen vacancies were introduced into La2Mo1.7W0.3O9 lattice by substitution, and then the oxygen ionic conductivity was increased. At 550 degrees C, the conductivity increased 89.9%, that is, from 0.79 x 10(-4) S center dot cm(-1) (x=0) to 1.5 X 10(-4)S center dot cm(-1) (x=0.16, 0.2).

Synthesis, characterization and electrical properties of the new solid electrolyte materials Ce6-xErxMoO15-delta (0.0 < x < 1.5)

A new series of oxides, Ce6-xErxMoO15-delta (0.0 less than or equal to x less than or equal to 1.5), was synthesized using wet-chemistry techniques. The precursors and resultant oxide powders were characterized by differential thermal analysis/thermogravimetry, x-ray diffraction, and IR, Raman and x-ray photoelectron spectroscopy. The formation temperature of the powders was found to be as low as 350degreesC. Ce6-xErxMoO15-delta crystallized to a fluorite-related cubic structure. The electrical conductivity of the samples was investigated by using ac impedance spectroscopy. This showed that the presence of Er was related to the oxygen-ion conductivity, and that the highest oxygen-ion conductivity was found in Ce6-xErxMoO15-delta (x = 0.4), ranging from 5.9 x 10(-5) S cm(-1) at 300degreesC to 1.26 x 10(-2) S cm(-1) at 700degreesC, respectively. This kind of material shows a potential application in intermediate-temperature solid oxide fuel cells.