GÊNERO, RAÇA, DISCRIMINAÇÃO: O TOM DA COR NA DIREÇÃO DA ESCOLA PÚBLICA.

BRUNELLI, Conceição Aparecida Garcia: Gênero, raça, discriminação: o tom da cor na direção da escola pública. Mestrado em Educação. Universidade Metodista de São Paulo, São Bernardo do Campo - SP. 1 v. 244 p. 2007. Esse trabalho teve por objetivo investigar a trajetória das mulheres negras diretoras de escola pública e o processo de construção de sua identidade social, cultural, de gênero e raça. De fato, as mulheres negras em questão constroem suas identidades nadando entre águas profundas e revoltas: a das relações de gênero e a das relações raciais. A pesquisa permitiu-nos desvendar o processo seletivo pelo qual passam essas mulheres que conseguiram romper o duplo bloqueio formado pelas relações de gênero e de raça e atingiram a posição profissional de diretoras de escola pública. A questão central que norteia essa pesquisa diz respeito à trajetória de vida da mulher negra que optou pela carreira do magistério, as intercorrências encontradas ao longo de sua trajetória pessoal, de formação acadêmica e profissional, suas experiências, frustrações, expectativas, preconceitos e discriminações sofridos na caminhada até chegar ao exercício de sua atividade pública, sua ascensão social, o ingresso na carreira pública e as relações de poder que perpassam as questões de gênero e raça. Aborda ainda como essas intercorrências incidem sobre o processo de construção da identidade dessas mulheres negras e de suas relações com seus colegas brancos, homens e mulheres. A coleta de dados empíricos foi realizada através da história oral representada pela memória dessas mulheres, baseada nos depoimentos escritos e em entrevistas semi-estruturadas. Os depoimentos colhidos permitiram reunir material que foram interpretados segundo as relações de poder elaboradas por Foucault e que nos possibilitam a compreensão e uma reflexão do processo de construção das identidades individual e coletiva.

GÊNERO, RAÇA, DISCRIMINAÇÃO: O TOM DA COR NA DIREÇÃO DA ESCOLA PÚBLICA.

Esse trabalho teve por objetivo investigar a trajetória das mulheres negras diretoras de escola pública e o processo de construção de sua identidade social, cultural, de gênero e raça. De fato, as mulheres negras em questão constroem suas identidades nadando entre águas profundas e revoltas: a das relações de gênero e a das relações raciais. A pesquisa permitiu-nos desvendar o processo seletivo pelo qual passam essas mulheres que conseguiram romper o duplo bloqueio formado pelas relações de gênero e de raça e atingiram a posição profissional de diretoras de escola pública. A questão central que norteia essa pesquisa diz respeito à trajetória de vida da mulher negra que optou pela carreira do magistério, as intercorrências encontradas ao longo de sua trajetória pessoal, de formação acadêmica e profissional, suas experiências, frustrações, expectativas, preconceitos e discriminações sofridos na caminhada até chegar ao exercício de sua atividade pública, sua ascensão social, o ingresso na carreira pública e as relações de poder que perpassam as questões de gênero e raça. Aborda ainda como essas intercorrências incidem sobre o processo de construção da identidade dessas mulheres negras e de suas relações com seus colegas brancos, homens e mulheres. A coleta de dados empíricos foi realizada através da história oral representada pela memória dessas mulheres, baseada nos depoimentos escritos e em entrevistas semi-estruturadas. Os depoimentos colhidos permitiram reunir material que foram interpretados segundo as relações de poder elaboradas por Foucault e que nos possibilitam a compreensão e uma reflexão do processo de construção das identidades individual e coletiva.

Combined effect of double antireflection coating and reversible molecular doping on performance of few-layer graphene/n-silicon Schottky barrier solar cells

Few-layer graphene films were grown by chemical vapor deposition and transferred onto n-type crystalline silicon wafers to fabricate graphene/n-silicon Schottky barrier solar cells. In order to increase the power conversion efficiency of such cells the graphene films were doped with nitric acid vapor and an antireflection treatment was implemented to reduce the sunlight reflection on the top of the device. The doping process increased the work function of the graphene film and had a beneficial effect on its conductivity. The deposition of a double antireflection coating led to an external quantum efficiency up to 90% across the visible and near infrared region, the highest ever reported for this type of devices. The combined effect of graphene doping and antireflection treatment allowed to reach a power conversion efficiency of 8.5% exceeding the pristine (undoped and uncoated) device performance by a factor of 4. The optical properties of the antireflection coating were found to be not affected by the exposure to nitric acid vapor and to remain stable over time.

Two new 1D chains of Ni(2)Na(2) heterometallic double half-cubane building units: Synthesis, structures and variable temperature magnetic study

An equimolar mixture of Ni(NO(3))(2)center dot 6H(2)O and pyridine-2-aldehyde with two equivalents of NaN(3) in methanol in the presence of NaOMe resulted in the formation of light green precipitate which upon crystallization from dimethylformamide (DMF) yielded light green single crystals [{Ni(2)Na(2)(pic)(4)(N(3))(2)(H(2)O)(2)(MeOH)}center dot MeOH center dot 3H(2)O](n) (1) and [{Ni(2)Na(2)(pic)(4)(N(3))(2)(H(2)O)(4)}center dot 2DMF center dot H(2)O](n) (2) (pic = pyridine-2-carboxylate) at room temperature and high temperature (100 degrees C), respectively. Variable temperature magnetic studies revealed the existence of overall ferromagnetic behaviour with J approximate to + 10 cm(-1) and D approximate to -2 to -7 cm(-1) for 1 and 2, respectively. Negative D values as well as variation of D upon slight distortion of structure by varying reaction temperature were observed. The X-band Electron Paramagnetic Resonance (EPR) spectra of both 2 and 3 were recorded below 50 K. The structural distortion was also implicated from the EPR spectra. Density Functional Theory (DFT) calculations on both complexes were performed in two different ways to corroborate the magnetic results. Considering only Ni(2)(II) dimeric unit, results were J = + 20.65 cm(-1) and D = -3.16 cm(-1) for 1, and J = +24.56 cm(-1) and D = -4.67 cm(-1) for 2. However, considering Ni(2)(II)Na(2)(I) cubane as magnetic core the results were J = +16.35 cm(-1) (1), +19.54 cm(-1) (2); D = -3.05 cm(-1) (1), -4.25 cm(-1) (2).

Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current-voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights. (C) 2014 AIP Publishing LLC.

Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.

Photovoltaic effects in InGaN structures with p-n junctions

InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.

Electronic structures of GaAs/AlxGa1-xAs quantum double

In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings(QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures

An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter Delta Omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that Delta Omega should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaNxAs1-x samples with N contents up to 5%. XRD measurements show that our GaNxAs1-x layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaNxAs1-x samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L-c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L-c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L-c. (C) 2000 Elsevier Science B.V. All rights reserved.

Structures of energy spectrum and persistent currents in mesoscopic rings with radial potential barrier in magnetic field

The energy spectrum and the persistent currents are calculated for finite-width mesoscopic annular structures with radial potential barrier in the presence of a magnetic field. The introduction of the tunneling barrier leads to the creation of extra edge states around the barrier and the occurrence of oscillatory structures superimposed on the bulk Landau level plateaus in the energy spectrum. We found that the Fermi energy E-F increases with the number of electrons N emerging many kinks. The single eigenstate persistent current exhibits complicated structures with vortex-like texture, ''bifurcation'', and multiple ''furcation'' patterns as N is increased. The total currents versus N display wild fluctuations.

Structures of an asymmetrically coupled double-well superlattice by double-crystal X-ray diffraction

An asymmetrically coupled (GaAs/AlAs/GaAs/AlAs)/GaAs (001) double-well supperlattice is studied by HRDCD (high resolution double-crystal X-ray diffractometry). The intensity of satellite peaks is modulated by wave packet of different sublayers. In the course of simulation, the satellite peaks in the vicinity of the node points of wave packet are very informative for precise determination of sublayer thickness and for improving accuracy.