30 MeV/u~(40)Ar+~(nat)Ag反应中类弹碎片发射的时-空演化

报道了 ３０ＭｅＶ／ ｕ(４０)Ａｒ＋(ｎａｔ)Ａｇ反应中中等质量碎片（ＩＭＦ）发射时间（τ）随发射源空间大小的演化规律，并对类弹碎片的发射时空进行了讨论．结果表明，ＩＭＦ的发射时标与中等质量碎片关联函数以及发射源的核物质密度（ρ）有关，而与发射源的质量数的关系不大．对于能量较高的类弹碎片来说，在较小的核物质密度下提取的发射时间也较小，因此，在正常核物质密度参数下提取出的发射时间值可作为碎片实际发射时间的上限值．中速碎片的发射时间随密度大小的变化非常缓慢，提取出的发射时间值即可作为实际的发射时间。

Void swelling in MA956 ODS steel irradiated with 122 MeV Ne-ions at elevated temperatures

An investigation of a commercial oxide dispersion-strengthened steel (MA9561) irradiated with high energy Ne-ions to high doses at elevated temperatures is presented. Specimens of MA956 oxide dispersion strengthened steel together with a 9% Cr ferritic/martensitic steel, e.g., Grade 92 steel were irradiated simultaneously with 20Ne-ions (with 122 MeV) to successively increasing damage levels of 1, 5 and 10 dpa at the damage peak at 440 C and 570 C, respectively. Cross-sectional microstructures of the specimens were investigated with transmission electron microscopy. MA956 oxide dispersion strengthened steel showed a higher resistance to void swelling especially to void growth at the grain boundaries than the ferritic/martensitic steel, e.g., Grade 92 steel did, and thus exhibited a prominence for an application in the situation of a high He production at high temperatures. The suppression of the growth of voids especially at the grain boundaries in MA956 is ascribed to an enhanced recombination of the point defects and a trapping of Ne atoms at the interfaces of the yttrium–aluminum oxide particles and the matrix.

Quasi-Elastic Scattering of C-16 from C-12 at 47.5 MeV/Nucleon

Differential cross sections for the quasi-elastic scattering of C-16 at 47.5 MeV/nucleon from C-12 target are measured. Coupled-channels calculations are carried out and the optical potential parameters are obtained by fitting the experimental angular distribution.

Modification of Fe/Cu Multilayers under 2-MeV Xe20+ Irradiation

Multilayers with a structure of Si/[Fe(10 nm)/CU(10 nm)](5) were deposited on Si(100) substrates and then irradiated at room temperature by using 2-MeV Xe20+. The modifications of the multilayers were characterized using a depth profile analysis of the Auger electron spectroscopy (AES) data and the evolution of crystallite structures of the multilayers were analyzed by using X-ray diffraction (XRD). The AES depth profiles indicated that de-mixing of the Fe and the Cu layers was observed at low ion fluences, but inter-mixing of the Fe and the Cu layers was found at high ion fluences and destroyed the layered structure of the multilayers. The obtained XRD patterns showed that, after irradiation by 2-MeV Xe20+ at; 2 x 10(16) ions/cm(2), the peaks of the multilayers related to a Cu-based fee solid solution and an Fe-based bee solid solution phase became visible, which implied that the inter-mixing at the Fe/Cu interface resulted in the formation of new phases. A possible mechanism of modification in the Fe/Cu multilayers induced by ion irradiation is briefly discussed.

Effect of 80.55 MeV/u(12)C(6+) ions on radiosensitivity and cell cycle of human hepatoma cell lines

In this paper, the relationship between radiosensitivity, cell cycle alteration and the change of apoptosis in different human hepatoma cell lines irradiated by heavy ions were studied with the aim of building up the base data for clinical therapy. Exponentially growing hepatoma cell lines were irradiated by 80.55 MeV/u(12)C(6+) ions at a dose of 0 Gy, 0.5 Gy, 1 Gy, 2 Gy, 4 Gy and 8 Gy. The radiosensitivity was assessed by means of the colony-forming assay. The DNA content, the percentage of each cell-cycle phase and the apoptosis rate were obtained with flow cytometry methods. After the irradiation, the SF2 (survival fraction at 2 gray) of SMMC-7721 cells were evidently lower than that of HepG2 cells. The S phase arrest, G2/M phase arrest delay and the apoptosis in the two hepatoma cell lines varied with the increase of the dose and repair time. The heavy ions could obviously kill the human hepatoma cell lines. Compared to HepG2 cells, SMMC-7721 cells were more radiosensitive to C-12(6+) ions.

Production cross-section of Ra-230 in the reaction of 60 MeV/u O-18 ions with U-238

A thick natural uranium target was bombarded with a 60 MeV/u O-18 beam. The neutron-rich isotope Ra-230 as the target residue was produced through the multinucleon transfer reaction (U-238-4p-4n). The barium and radium fraction as BaCl2 precipitate were radiochemically separated first from the mixture of uranium and reaction products. Then, the radium fraction was separated from BaCl2 precipitate by using cation exchange technique. The gamma-ray spectra of the Ra fraction were measured using an HPGe detector. The production cross sections of Ra-230 were obtained by a combination of the radiochemical separation technique and off-line gamma-ray spectroscopy. The cross section of Ra-230 has been determined to be 66 +/- 20 mu b.

Projectile fragmentation of Kr-86 at 64 MeV/nucleon

We measured fragmentation cross sections produced using the primary beam of Kr-86 at 64 MeV/nucleon on Be-9 and Ta-181 targets. The cross sections were obtained by integrating the momentum distributions of isotopes with 25 <= Z <= 36 measured using the RIPS fragment separator at RIKEN. The cross-section ratios obtained with the Ta-181 and Be-9 targets depend on the fragment masses, contrary to the simple geometrical models. We compared the extracted cross sections to EPAX; an empirical parametrization of fragmentation cross sections. Predictions from current EPAX parametrization severely overestimate the production cross sections of very neutron-rich isotopes. Attempts to obtain another set of EPAX parameters specific to the reaction studied here to extrapolate the neutron-rich nuclei more accurately have not been very successful, suggesting that accurate predictions of production cross sections of nuclei far from the valley of stability require information of nuclear properties that are not present in EPAX.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Production cross section of Th-236 in the interaction of U-238 with 60 MeV/u O-18 ions

The neutron-rich target-like isotope Th-236 has been produced in the U-238-2p multinucleon transfer reaction between a 60 MeV/u O-18 beam and natural U-238 targets. The activities of thorium were determined after radiochemical separation of Th from the mixture of uranium and reaction products. The Th-236 isotope was identified by the characteristic gamma-rays of 642.2, 687.6 and 229.6 keV. The production cross section of Th-236 was determined to be 250 +/- 50 mu b.

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.

Isospin diffusion and equilibration for Sn plus Sn collisions at E/A=35 MeV

Equilibration and equilibration rates have been measured by colliding Sn nuclei with different isospin asymmetries at beam energies of E/A = 35 MeV. Using the yields of mirror nuclei of Li-7 and Be-7, we have studied the diffusion of isospin asymmetry by combining data from asymmetric Sn-112 + Sn-124 and Sn-124 + Sn-112 collisions with those from symmetric Sn-112 + Sn-112 and Sn-124 + Sn-124 collisions. We use these measurements to probe isospin equilibration in central collisions where nucleon-nucleon collisions are strongly blocked by the Pauli exclusion principle. The results are consistent with transport theoretical calculations that predict a degree of transparency in these collisions, but inconsistent with the emission of intermediate mass fragments by a single chemically equilibrated source. Comparisons with quantum molecular dynamics calculations are consistent with results obtained at higher incident energies that provide constraints on the density dependence of the symmetry energy.

94MeV Xe离子辐照引起的薄膜硅光学带隙变化研究；Modification of Optical Bandgap of Thin Silicon Films Induced by 94 MeV Xe Ion Irradiation

室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。

80 MeV/u C-12离子诱变选育PHB高产菌株；A strain of high PHB output by mutagenesis of 80 MeV/u C-12 ions

用80MeV/u12C6+离子对一株积累聚β-羟基丁酸酯(PHB)的芽孢杆菌(BacillusP-9)进行诱变选育,最终获得PHB高产株菌G15,其PHB产量达2.93g/L,与出发菌株相比较,PHB积累量提高了1.5倍。研究结果表明,本试验辐照最佳剂量为15Gy。重离子辐照诱变育种效果显著,具有广阔的发展应用前景。

25MeV/u Kr辐照下PET薄膜的损伤机制研究；Damage Mechanism of PET Irradiated by 25 MeV/u Kr Ions

通过25MeV/u86Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜(PET),在不同的电子能损(3.407.25keV/nm)和离子注量(5×10113×1012ions/cm2)辐照条件下,对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势,研究了化学结构与组分在重离子辐照下的变化规律;利用X射线衍射光谱仪测量,研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析,获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。