Aditz-azpikategorizazioaren azterketa sintaxi partzialetik sintaxi osorako bidean. 100 aditzen azterketa, Levin-en (1993) lana oinarri hartuta eta metodo automatikoak baliatuz

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Single sub-100 attosecond pulse generation in a two-colour time-gating laser field

We theoretically propose a method of generating a single sub-100 attosecond (as) pulse with a two-colour time-gating laser field. The field is synthesized by an 8 fs/800 nm (three optical cycles) pulse and a 24 fs/2400 nm (three optical cycles) pulse with an optimal time delay between them. In our simulation, we obtain a supercontinuum with an extremely broad spectrum of 150 eV and generate an isolated attosecond pulse with 96 as pulse duration without any dispersion compensation.

On the classification of lakes and lake-like bodies of the Ukraine [Translation from: Gidrobiologicheskie Zhurnal, Kiev 19(2) 100-101, 1983]

In the Ukraine there are several thousand large, medium and small lakes and lake-like reservoirs, distinguished by origin, salinity, regional position, productivity and by construction a significant number of large and small water bodies, ponds and industrial reservoirs of variable designation. The problem of national systems necessitates the creation of specific schemes and classifications. Classifying into specific types of reservoir by means of suitable specifications is required for planning national measures with the objective of the rational utilisation of natural resources. It is now necessary to consider the present-day characteristics of Ukranian lakes. In the case of the Ukraine it is possible to use two approaches - genetical and ecological. This paper uses the genetical system to classify the lake-like water bodies of the Ukraine.

Feeding of larval Cricotopus silvestris F. in relation to characters of structure of oral apparatus [Translation from: C.R.Acad.Sci.USSR.100, 1191-1193, 1955]

Laboratory research was done in order to study the feeding of larval Cricotopus silvestris F. in relation to characters of structure of oral apparatus. Results of the experiments are summarised and the oral apparatus morhologically described.

Epitaxial growth of ZnO films on (100) and (001) gamma-LiAlO2 substrates by pulsed laser deposition

Structural and optical properties were investigated for ZnO films grown on (100) and (001) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. According XRD results, it is intuitionistic that (100) LAO is suitable for fabricating high quality ZnO film, while (001) LAO is unsuitable. The FWHM of XRD, stress in film and FWHM of UV PL spectra for ZnO films on (100) LAO show a decreasing with increasing substrate temperature from 300 to 600 degrees C. ZnO film fabricated at 600 degrees C has the greatest grain size, the smallest stress (0.47 Gpa) and PL FWHM value (similar to 85 meV). This means that the substrate temperature of 600 degrees C is optimum for ZnO film deposited on (100) LAO. Moreover, it was found that the UV PL spectra intensity of ZnO film is not only related to the grain size and stoichiometric, but also depends on the stress in the film.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Composite substrate LiGaO2(001)/beta-Ga2O3(100) fabricated by vapor transport equilibration

Highly (001) orientation LiGaO2 layers have been successfully fabricated on (100) beta-Ga2O3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the WE treatment. At low temperature (800 degrees C), LiGaO(2)layers are textured. As the temperature was raised to 1100 C the layer becomes highly oriented in the [100] direction. It shows that the best temperature for WE treatment is 1100 degrees C. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO2 (001)//beta-Ga2O3 (100) for GaN films. (c) 2006 Elsevier B.V. All rights reserved.