Selenium adsorption on Au(111) and Ag(111) surfaces: adsorbed selenium and selenide films

Results of a high resolution photoemission and electrochemistry study of Se adsorption Au(111) and Ag(111) surfaces performed by immersion of pristine samples into an aqeuous solution of Na2Se are presented. Cyclic voltammetry on Au shows formation of selenium adsorbed species and the structures observed in reductive desorption are to the atomic and polymeric species observed in XPS. In the case of Au(111) XPS spectra in the Se(3d) region indeed show two main features attributed to Se chemisorbed atomically and polymeric Se-8 features.' Smaller structures due to other types of Se conformations were also observed. The Au(4f) peak line, shape does not show core level, shifts: indicative of Au selenide formation the case of silver, XPS spectra for the Ag(3d) show a broadening of the peak and a deconvolution into Ag-B bulk like Ag-Se components shows that the Ag-Se is located at a lower binding energy, an effect similar to oxidation and sulfidation of Ag. The Se(3d) XPS spectrum is found to be substantially different from the Au case and dominated by atomic type Se due to the selenide, though a smaller intensity Se structure at an energy similar to the Se-8 structure for Au is also observed. Changes in the valence band region. related to Se adsorption are reported.

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus > 1GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality. (C) 2013 AIP Publishing LLC.

Evidence of Low Field Magnetoimpedance Effect in (111) Oriented Fe3O4 Thin Films

Thin film of Fe3O4 is grown on (100) oriented GaAs substrate using pulsed laser deposition (PLD). The films were found to be (111) oriented. They were characterized morphologically as well as magnetically. They show Verwey transition at 120 K with the coercivity of 220 Oe at room temperature. These films were found to show magnetoimpedance effect with the ac magnetoresistance (MRac) of the order of similar to -6% at 10 MHz, at room temperature. The MRac was found to increase in low field-low frequency regime and decrease in low field high frequency regime.

Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current-voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights. (C) 2014 AIP Publishing LLC.

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.

微碳深冲钢板的非｛111｝织构特征及其对r,△r值的影响

From St15 micro-carbon deep drawing steel sheets, two sets of samples with (r) over bar variant and Deltar constant, and (r) over bar constant and Deltar variant, were selected to carry out texture measurement and ODF analysis. A description of the texture characteristics and an investigation on the effect of the main textures on the (r) over bar and Deltar values were given. The results show that in the tested steel sheets no desired gamma < 111 > parallel to ND orientation line appears but gamma' orientation line located at <()over bar>=0-90 degrees, theta =19 degrees and phi =45 degrees, and L orientation line located around gamma < 111 > parallel to ND orientation line which spirally rotates from Psi =0 degrees, theta =54.7 degrees and phi =62.7 degrees to Psi =90 degrees, theta =40 degrees and phi =45 degrees occur. Among them, the L orientation line has a main influence on the (r) over bar value and the stronger the texture density, the higher the (r) over bar value is, but is somewhat detrimental to the Deltar value; at the same time, the gamma' orientation line has a major effect on the Deltar value in an opposite way, but is somewhat deteriorative to the (r) over bar value. A strong L orientation line superposed by a relatively strong gamma' orientation line may produce fine (r) over bar and Deltar values.

Adlayer Structures of DL-Homocysteine and L-Homocysteine Thiolactone on Au(111) Surface: an in situ STM Study

The adsorption Of DL-homocysteine (Hcy) and L-homocysteine thiolactone (HTL) on Au(1 1 1) electrode was investigated in 0.1 M HClO4 by cyclic voltammetry and in situ scanning tunneling microscopy (STM). Hcy and HTL molecules formed highly ordered adlayers on Au(1 1 1) surface. High-resolution STM images revealed the orientation and packing arrangement in the ordered adlayers. Hcy molecules formed (2root3 x 3root3)R30degrees adlayer structure and H-bonds between carboxyl groups were assumed to be responsible for the origin of tail-to-tail or head-to-head molecular arrangement, while HTL molecules formed (4 x 6) adlayer structure, and two different orientations and appearances in the ordered adlayer were found. Structural models were proposed for the two adlayers.