An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si


Autoria(s): Chandrasekar, Hareesh; Mohan, Nagaboopathy; Bardhan, Abheek; Bhat, KN; Bhat, Navakanta; Ravishankar, N; Raghavan, Srinivasan
Data(s)

18/11/2013

Resumo

The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus > 1GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality. (C) 2013 AIP Publishing LLC.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/48111/1/App_Phy_Lett_103-21_211902_2013.pdf

Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.

Publicador

American Institute of Physics

Relação

http://dx.doi.org/10.1063/1.4831968

http://eprints.iisc.ernet.in/48111/

Palavras-Chave #Materials Research Centre #Electrical Communication Engineering #Centre for Nano Science and Engineering
Tipo

Journal Article

PeerReviewed