A interface entre educação e mercado : uma análise crítica das mudanças socioculturais no contexto educacional

In the context of late modernity, the socio-cultural transformations established new social practices which corroborate discursive changes in dialectic movements, contributing to the order of the educational discourses to be more and more affected by typical market discourses and values which are covered by ideologies, hegemonic struggles and power relations. In this sense, this research study, which is based on the theoretical tenets of the Critical Discourse Analysis in its interdisciplinary branch (FAIRCLOUGH, 2006; ORMUNDO, 2010; PEDROSA, 2010; RAMALHO E RESENDE, 2011), aims at discussing how the sociocultural changes in the context of private education interact with the market proposal of neoliberal and economical policies. The research was methodologically based on the qualitative approach (CHIZZOTTI, 1991; BOGDAN e BIKLEN, 1994; MINAYO, 1994), especially on the principles of contemporary Applied Linguistics (SIGNORINI, 1998; MOITA-LOPES, 2006; MENEZES, SILVA, GOMES, 2009). Data were gathered from advertisements used in campaigns by private educational institutions and agencies in Natal/RN; the advertisements were collected in primary and secondary levels and in language courses from October to December, 2010. The data analysis indicate that education, in the context of globalization and late modernity, has become a market agency and that the new face of the educational discourse of private institutions is interwoven with a social representation of education as a site of struggle and hegemonic dispute. Therefore, the research leads us to infer that, as the educational public policies based on hegemonic economy and on ideological assumptions of international agents (Global Bank, FMI, etc.) have become widespread, education has become an arena of dispute and a powerful economic product to the market of cultural and commercial industry, thus emphasizing a society in which everything is economically based

Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors

A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.

Efeitos de interface em bicamadas magnéticas acopladas

We have developed a theoretical study of magnetic bilayers composed by a ferromagnetic film grown in direct contact on an antiferromagnetic one. We have investigated the interface effects in this systems due to the interfilms coupling. We describe the interface effects by a Heisenberg like coupling with an additional unidirectional anisotropy. In the first approach we assume that the magnetic layers are thick enough to be described by the bulk parameters and they are coupled through the interaction between the magnetic moments located at the interface. We use this approach to calculate the modified dynamical response of each material. We use the magnetic permeability of the layers (with corrections introduced by interface interactions) to obtain a correlation between the interface characteristics and the physical behavior of the magnetic excitations propagating in the system. In the second model, we calculated an effective susceptibility of the system considering a nearly microscopical approach. The dynamic response obtained by this approach was used to study the modifications in the spectrum of the polaritons and its consequences on the attenuated total reflection (ATR). In addition, we have calculated the oblique reflectivity. We compare our result with those obtained for the dispersion relation of the magnetostatic modes in these systems

Efeitos de interface em bicamadas magnéticas

We study magnetic interface roughness in F/AF bilayers. Two kinds of roughness were considered. The first one consists of isolated defects that divide the substrate in two regions, each one with an AF sub-lattice. The interface exchange coupling is considered uniform and presents a sudden change in the defects line, favoring Neel wall nucleation. Our results show the interface field dependence of the threshold thickness for the reorientation of the magnetization in the ferromagnetic film. Angular profiles show the relaxation of the magnetization, from Neel wall, at the interface, to reoriented state, at the surface. External magnetic field, perpendicular to the easy axis of the substrate, favors the reoriented state. Depending, of the external magnetic field intensity, parallel to the easy axis of the AF, the magnetization profile at surface can be parallel or perpendicular to the field direction. The second one treats of distributed deffects, periodically. The shape hysteresis curves, exchange bias and coercivity were characterized by interface field intensity and roughness pattern. Our results show that dipolar effects decrease the exchange bias and coercivity

Kinetics of interface state-limited hole injection in alpha-naphthylphenylbiphenyl diamine (alpha-NPD) thin layers

Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.

Impedance of carrier injection at the metal-organic interface mediated by surface states in electron-only tris(8-hydroxyquinoline) aluminium (Alq(3)) thin layers

Capacitance spectra of thin (< 200 nm) Alq(3) electron-only devices have been measured as a function of bias voltage. Capacitance spectra exhibit a flat response at high frequencies (> 10(3) Hz) and no feature related to the carrier transit time is observed. Toward low frequencies the spectra reach a maximum and develop a negative excess capacitance. Capacitance response along with current-voltage (J-V) characteristics are interpreted in terms of the injection of electrons mediated by surface states at the metal organic interface. A detailed model for the impedance of the injection process is provided that highlights the role of the filling/releasing kinetics of energetically distributed interface states. This approach connects the whole capacitance spectra to the occupancy of interface states, with no additional information about bulk trap levels. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 1.5 x 10(12) cm (2)). (C) 2008 Elsevier B.V. All rights reserved.

Nanohardness of a Ti thin film and its interface deposited by an electron beam on a 304 SS substrate

The results of nanohardness measurements at a film surface and film-substrate interface are presented and discussed. An electron beam device was used to deposit a Ti film on a 304 stainless steel (304 SS) substrate. The diluted interface was obtained by thermal activated atomic diffusion. The. Ti film and Ti film-304 SS interface were analyzed by energy dispersive spectrometry and were observed using atomic force microscopy. The nanohardness of the Ti film-304 SS system was measured by a nanoindentation technique. The results showed the Ti film-304 SS interface had a higher hardness value than the Ti film and 304 SS substrate. The Ti film surface had a lower hardness due to the presence of a TiO2 thin layer.

Influência da técnica de fabricação e dos materiais sobre o ajuste da interface pilar/implante em infraestruturas implantossuportadas

The aim of this study was to compare the misfit vertical, horizontal and passivity of zirconia and cobalt-chromium frameworks fabricated for CAD / CAM technology and conventional method of casting. Sixteen frameworks in one-piece, were obtained from a metallic matrix containing three Brånemark compatible implants with regular platform (Titamax Cortical Ti, Neodent). Eight frameworks were fabricated by CAD / CAM system (NeoShape, Neodent): four in zirconia (ZirCAD) and four cobalt-chromium (CoCrcad). Eight other frameworks were obtained by conventional casting method: four cobalt-chromium with UCLA abutment premachined Co-Cr (CoCrUCci) and four cobalt-chromium with UCLA abutment castable (CoCrUCc). The fit vertical, horizontal and passivity by one-screw test were measured using scanning electron microscopy with magnification of 250x. Initially evaluated the passivity by one-screw test and subsequently to assess the vertical and horizontal misfit, tightened all the screws with a torque of 20 Ncm. Mean, standard deviation, minimum and maximum values were calculated for each group. Measurements of horizontal misfit were transformed into cumulative frequency for categorization of the variable and the group later comparison groups. To evaluate the existence of quantitative differences between the groups tested for vertical misfit and passivity, we used the Kruskal-Wallis test. The Mann-Whitney test was used to compare group to group statistical differences (p <0.05). Were observed the respective mean and standard deviation for vertical misfit and passivity in micrometers: ZirCAD (5.9 ± 3.6, 107.2 ± 36), CoCrcad (1.2 ± 2.2, 107.5 ± 26 ), CoCrUCci (11.8 ± 9.8, 124.7 ± 74), CoCrUCc (12.9 ± 11.0, 108.8 ± 85). There were statistical differences in measures of vertical misfit (p = 0.000). The Mann-Whitney test revealed statistical differences (p <0.05) between all groups except between CoCrUCci and CoCrUCc (p = 0.619). No statistical difference was observed for the passivity. In relation to the horizontal misfit groups ZirCAD and CoCrcad did not show best values in relation to CoCrUCci and CoCrUCc. Based on the results it can be concluded that frameworks fabricated by CAD / CAM technology had better values of vertical fit than those manufactured by the casting method, nevertheless, the passivity was not influenced by manufacturing technique and material used. The horizontal fit obtained by frameworks manufactured by CAD / CAM was not superior to those manufactured by casting. A lower variability in vertical adjustment and passivity was observed when frameworks were fabricated by CAD / CAM technology

Passividade na interface prótese/pilar intermediário de infraestrutura implantossuportadas confeccionadas pela tecnologia CAD/CAM e método convencional

The objective of this research was to evaluate the passivity and strain induced in infrastructures screwed on abutments, made by CAD/CAM technology, and to compare these samples with parts manufactured by conventional casting. Using CAD/CAM technology, 4 samples were made from zirconia (Zircad) and 4 samples were manufactured from cobaltchrome (CoCrcad). The control groups were 4 specimens of cobalt-chrome, made by onepiece casting (CoCrci), for a total of 12 infrastructures. To evaluate the passivity, the infraestructures were installed on the abutments. One end was tightened and the vertical gap between the infrastructure and the prosthetic abutment was measured with scanning electron microscopy (250×). The mean strain in these infrastructures was analyzed via the photoelasticity test. A significant difference (p = 0.000) in passivity was observed between the control (CoCrci) and sample groups (CoCrcad and CoCrci). CoCrcad exhibited the best value of passivity (48.76 ± 13.45 μm) and CoCrci the worst (187.55 ± 103.63 μm), Zircad presented an intermediate value (103.81 ± 43.15 μm). When compared to the other groups, CoCrci showed the highest mean strain around the implants (17.19 ± 7.22 kPa). It was concluded that the zirconia infrastructure made by CAD / CAM showed a higher vertical marginal misfit than those made in cobalt-chromium alloy with the same methodology, however, the tension generated in the implants was similar. The CAD/CAM technology is more accurate for passivity and mean strain of infrastructure screwed on abutments than conventional manufacturing techniques

Recurso de interface captcha: segurança e usabilidade na distinção entre humano e máquina

Com o intuito de impedir que computadores enviem mensagens automáticas se passando por usuários reais, desenvolvedores tem utilizado o recurso de interface CAPTCHA para distinguir o preenchimento de dados e submissões realizadas por humanos e por máquinas. Este trabalho apresenta as principais modalidades de CAPTCHAs e discute as implicações na usabilidade. Para tanto, foram aplicados questionários e realizados testes de usabilidade em três modalidades de CAPTCHA. Verificou-se que, embora os usuários tenham consciência da importância do uso do CAPTCHA como ferramenta de segurança, percebeu-se que tal recurso compromete a usabilidade, gerando insatisfação e em alguns casos, a desistência da realização da tarefa