Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment

Cr3+-doped NH4Al(OH)(2)CO3 nanotubes, templated by surfactant assemblies, were successfully synthesized via the homogenization precipitation method, and various crystallographic phase Al2O3:Cr3+ nanotubes were also obtained by postannealing at different temperatures. The characteristic R-1, R-2 doublet line transitions of ruby can be observed in the high crystalline alpha-Al2O3 nanotubes calcined at temperatures higher than 1200 degrees C. The results also indicate that the formation mechanism of the tubular nanostructures should result from the self-rolling action of layered compound NH4Al(OH)(2)CO3 under the assistance of the surfactant soft-template. The convenient synthetic procedure, excellent reproducibility, clean reactions, high yield, and fine quality of products in this work make the present route attractive and significant. Aluminum oxide nanotubes with high specific surface area could be used as fabricating nanosized optical devices doped with different elements and stable catalyst supports of metal clusters.

Changing the size and shape of Ge island by chemical etching

Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.