Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots

National Basic Research Program of China 2007CB924904;Chinese Academy of Sciences KICX2.YW.W09-1

Design of Low-Loss Surface-Plasmon Quantum Cascade Lasers

National Research Projects of China 60525406 60736031 60806018 60906026 2006CB604903 2007AA03Z446 2009AA03Z403

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

Evolution of wetting layer in InAs/GaAs quantum dot system

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.

Electronic structures of GaAs/AlxGa1-xAs quantum double

In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings(QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

Self-organized hexagonal ordering of quantum dot arrays

We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally aligned in a hexagonal way thus forming three-dimensionally ordered arrays. The growth pathway is based on a mechanism of self-assembly by strain-mediated multilayer vertical stacking on a planar GaAs(100) substrate, rather than molecular-beam epitaxy on a prepatterned substrate. The strain energy of lateral island-island interaction is minimum for the arrangement of hexagonal ordering. However, realization of hexagonal ordering not only depends on a complicated trade-off between lateral and vertical island-island interaction but is also related to a delicate and narrow growth kinetics window.

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm(2) and a characteristic temperature To of 145 K were observed for the laser diode.

Nonlinear Rashba model and spin relaxation in quantum wells

We find that the Rashba spin splitting is intrinsically a nonlinear function of the momentum, and the linear Rashba model may overestimate it significantly, especially in narrow-gap semiconductors. A nonlinear Rashba model is proposed, which is in good agreement with the numerical results from the eight-band k center dot p theory. Using this model, we find pronounced suppression of the D'yakonov-Perel' spin relaxation rate at large electron densities, and a nonmonotonic dependence of the resonance peak position of the electron spin lifetime on the electron density in [111]-oriented quantum wells, both in qualitative disagreement with the predictions of the linear Rashba model.

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then exhibits a sudden decrease at 535 degrees C. The trend is explained by taking into account the presence of multiatomic steps on the substrates. Photoluminescence (PL) studies show that quantum dots on vicinal substrates have a narrower PL linewidth, a longer emission wavelength, and a larger PL intensity than those of the dots with exact substrates. (c) 2006 American Institute of Physics.

Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells

A resonant-cavity enhanced reflective optical modulator is designed and frabricated, with three groups of three highly strained InGaAS/GaAs quantum wells in the cavity, for the low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AIAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.