1000 resultados para Conhecimento de si
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xThe aim of this article is to present a contribution of the school knowledge research to Chemistry Teaching. The object of research is school knowledge on physical sciences, considering the existence of a rupture between scientific knowledge and everyday knowledge. The differences between analogies and metaphors and the process of didactic mediation were thoroughly examined. The conclusion is that the process of didactic mediation is built on their own cognitive configurations, which not always make public the private scientific knowledge to certain social groups.
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This thesis presents experimental studies of rare earth (RE) metal induced structures on Si(100) surfaces. Two divalent RE metal adsorbates, Eu and Yb, are investigated on nominally flat Si(100) and on vicinal, stepped Si(100) substrates. Several experimental methods have been applied, including scanning tunneling microscopy/spectroscopy (STM/STS), low energy electron diffraction (LEED), synchrotron radiation photoelectron spectroscopy (SR-PES), Auger electron spectroscopy (AES), thermal desorption spectroscopy (TDS), and work function change measurements (Δφ). Two stages can be distinguished in the initial growth of the RE/Si interface: the formation of a two-dimensional (2D) adsorbed layer at submonolayer coverage and the growth of a three-dimensional (3D) silicide phase at higher coverage. The 2D phase is studied for both adsorbates in order to discover whether they produce common reconstructions or reconstructions common to the other RE metals. For studies of the 3D phase Yb is chosen due to its ability to crystallize in a hexagonal AlB2 type lattice, which is the structure of RE silicide nanowires, therefore allowing for the possibility of the growth of one-dimensional (1D) wires. It is found that despite their similar electronic configuration, Eu and Yb do not form similar 2D reconstructions on Si(100). Instead, a wealth of 2D structures is observed and atomic models are proposed for the 2×3-type reconstructions. In addition, adsorbate induced modifications on surface morphology and orientational symmetry are observed. The formation of the Yb silicide phase follows the Stranski-Krastanov growth mode. Nanowires with the hexagonal lattice are observed on the flat Si(100) substrate, and moreover, an unexpectedly large variety of growth directions are revealed. On the vicinal substrate the growth of the silicide phase as 3D islands and wires depends drastically on the growth conditions. The conditions under which wires with high aspect ratio and single orientation parallel to the step edges can be formed are demonstrated.
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Postprint (published version)
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Technology companies created from University research are known as "Academic Spin-Off" (ASO). These innovative companies play an important role for the technological, economical and social development of a country. This work discusses some aspects of ASO companies and their importance to Universities. It is also presented a fictitious history of Prof. João, a chemical researcher who will create an ASO company from his academic research work illustrating the basic steps involved in this process.
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This article provides some aspects that allow making a current reading of the situation of the Brazilian Chemistry that permit us considerate it as a strategic area. They are still presented some initial proposals related to the organization of the research as well as to win the challenges of the relationship with the other areas of the knowledge.
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Technological innovation connects competitiveness and knowledge. In Brazil, knowledge is mainly concentrated in the universities which undertake R&D. This article aims to show the importance of Brazilian university extension activities, which transfer knowledge to society, contributing, in the case of the chemical sector, to a reduction in the country's total trade deficit of around US$8.5 billion, which is result of the importation of innumerable products. On the other hand, developed countries are resorting to technical barriers, which impose documentation and regulations based on testing products for conformity with standards. This demands a technical and scientific infrastructure, concentrated in the universities.
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En este trabajo se investiga la síntesis de estructuras SiC/Si mediante implantación iónica de carbono en Si. Las implantaciones se han realizado a energías entre 25 y 300 keV y las dosis en el rango lO^^ylO^^ cm , manteniendo el substrato a temperatura ambiente o 500°C. Algunas estructuras han sido recocidas a 1150°C. Los resultados indican que implantando a temperatura ambiente se forma una capa de SiC amorfa y de composición gradual, que recristaliza formando precipitados de ß-SiC con orientaciones aleatorias después del recocido. Además se forma un capa superficial rica en carbono, debida a la difusión del carbono hacia la superficie durante la implantación, y que desaparece con el recocido. Implantando a 500°C se forma directamente una capa con una muy alta densidad de precipitados de ß-SiC orientados preferencialmente con la matriz de silicio. Dada la estabilidad térmica y química de dicha capa se han realizado membranas de SiC mediante técnicas fotolitográficas y ataque químico selectivo, cuya rugosidad superficial es inferior a 6 nm. Estas membranas muestran unos gradientes de tensiones residuales, que prácticamente desaparecen después del recocido. Los resultados confirman la potencialidad de la implantación iónica para la formación de estructuras microme-cánicas de SiC sobre Si.
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Se ha utilizado la evaporación secuencial de Cu, Y2O3 y BaF2 para la obtención de láminas delgadas superconductoras de YBa-CuO sobre substratos de Si monocristalino con orientación [100], recubiertos con una lámina barrera de Zr02. Se han estudiado los efectos de la variación de los espesores relativos de las láminas constituyentes y del espesor total de la lámina resultante. Las láminas se han caracterizado mediante medidas de la variación de la resistencia con la temperatura, microscopía electrónoca de barrido, difractometría de rayos X, microson-da electrónica y espectometría de masas de iones secundarios. Las láminas presentan un ligero carácter semiconductor en el estado normal, con temperaturas de inicio de la transición su-perconductora alrededor de 90 K, y resistencia nula, en el mejor de los casos, a 45 K.
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Soitinnus: mieskuoro (TTBB).
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Soitinnus: mieskuoro