Raman and infrared properties and layer dependence of the phonon dispersions in multilayered graphene

The symmetry group analysis is applied to classify the phonon modes of N-stacked graphene layers (NSGLs) with AB and AA stacking, particularly their infrared and Raman properties. The dispersions of various phonon modes are calculated in a multilayer vibrational model, which is generalized from the lattice vibrational potentials of graphene to including the interlayer interactions in NSGLs. The experimentally reported redshift phenomena in the layer-number dependence of the intralayer optical C-C stretching mode frequencies are interpreted. An interesting low-frequency interlayer optical mode is revealed to be Raman or infrared active in even or odd NSGLs, respectively. Its frequency shift is sensitive to the layer number and saturated at about 10 layers.

New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides

The luminescence from Eu2+ ions in MF2 (M = Ca, Sr, Ba) fluorides has been investigated under the pressure range of 0-8 GPa. The emission band originating from the 4f(6)5d(1) -> 4f(7) transition of Eu2+ ions in CaF2 and SrF2 shows the red-shift as increasing pressure with pressure coefficients of -17 meV/GPa for CaF2 and -18 meV/GPa for SrF2. At atmospheric pressure, the emission spectrum of BaF2:Eu2+ comprises two peaks at 2.20 and 2.75 eV from the impurity trapped exciton (ITE) and the self-trapped exciton (STE), respectively. As the pressure is increased, both emission peaks shift to higher energies, and the shifting rate is slowed by the phase transition from the cubic to orthorhombic phase at 4 GPa. Due to the phase transition at 4-5 GPa pressure, the ITE emission disappears gradually, and the STE emission is gradually replaced by the 4f(6)5d(1) -> 4f(7) transition of Eu2+. Above 5 GPa, the pressure behavior of the 4f(6)5d(1) -> 4f(7) transition of EU2+ in BaF2: EU2+ is the same as the normal emission of Eu2+ in CaF2 and SrF2 phosphors.

Composition deviation of arrays of FePt nanoparticles starting from poly(styrene)-poly(4-vinylpyridine) micelles

Ordered arrays of FePt nanoparticles were prepared using a diblock polymer micellar method combined with plasma treatment. Rutherford backscattering spectroscopy analyses reveal that the molar ratios of Fe to Pt in metal-salt-loaded micelles deviate from those when metal precursors are added, and that the plasma treatment processes have little influence upon the compositions of the resulting FePt nanoparticles. The results from Fourier transform infrared spectroscopy show that the maximum loadings of FeCl3 and H2PtCl6 inside poly( styrene)-poly(4-vinylpyridine) micelles are different. The composition deviation of FePt nanoparticles is attributed to the fact that one FeCl3 molecule coordinates with a single 4-vinylpyridine (4VP) unit, while two neighboring and uncomplexed 4VP units are required for one H2PtCl6 molecule. Additionally, we demonstrate that the center-to-center distances of the neighboring FePt nanoparticles can also be tuned by varying the drawing velocity.

Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect. (c) 2008 American Institute of Physics.

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).

Temperature dependence of surface quantum dots grown under frequent growth interruption

We grow In-GaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the In segregation effect. Temperature dependence of photoluminescence measurement shows that this kind of QDs has a good thermal stability which is explained in terms of a "group coupling" model put forward by us. (C) 2007 Elsevier B.V. All rights reserved.

Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector

Strongly vertically coupled InAs/GaAs quantum dots (QDs) with modulation doping are investigated, and polarization dependence of two-color absorptions was observed. Analysis of photoluminescence (PL) and absorption spectra shows that s-polarized absorptions at. 10.0 and 13.4 mu m, stem from the first excited state E-1 and the second excited state E-2 in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively, whereas p-polarized absorptions at 10.0 and 8.2 mu m stem from the first excited state E-1 and the ground E-g in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively. These measurements illustrate that transitions from excited states are more sensitive to normal incidence, which are very important in designing QD infrared detector. (C) 2007 Elsevier B.V. All rights reserved.

Growth parameter dependence of magnetic property of CrAs thin film

This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that the substrate temperature affects the surface morphology and magnetic property of CrAs thin film more potently than the thickness.