995 resultados para Beam angle selection
Resumo:
A difficulty in the design of automated text summarization algorithms is in the objective evaluation. Viewing summarization as a tradeoff between length and information content, we introduce a technique based on a hierarchy of classifiers to rank, through model selection, different summarization methods. This summary evaluation technique allows for broader comparison of summarization methods than the traditional techniques of summary evaluation. We present an empirical study of two simple, albeit widely used, summarization methods that shows the different usages of this automated task-based evaluation system and confirms the results obtained with human-based evaluation methods over smaller corpora.
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We present a new method to select features for a face detection system using Support Vector Machines (SVMs). In the first step we reduce the dimensionality of the input space by projecting the data into a subset of eigenvectors. The dimension of the subset is determined by a classification criterion based on minimizing a bound on the expected error probability of an SVM. In the second step we select features from the SVM feature space by removing those that have low contributions to the decision function of the SVM.
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The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy.
Resumo:
A regulator imposing “sales restrictions” on firms competing in oligopolistic markets may enhance quality provision by the firms. Moreover, for most restrictions levels, the impact on quality selection is invariant to the mode of competition
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Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.