Oblique Angle Deposition of Germanium Film on Silicon Substrate
| Data(s) |
10/12/2004
10/12/2004
01/01/2005
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|---|---|
| Resumo |
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy. Singapore-MIT Alliance (SMA) |
| Formato |
1682300 bytes application/pdf |
| Identificador | |
| Idioma(s) |
en |
| Relação |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
| Palavras-Chave | #Oblique angle deposition #Germanium nanowires |
| Tipo |
Article |
