Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures

Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.

Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Statistical analysis of microscale gas flows and stock price changes

First, recent studies on the information preservation (IP) method, a particle approach for low-speed micro-scale gas flows, are reviewed. The IP method was validated for benchmark issues such as Couette, Poiseuille and Rayleigh flows, compared well with measured data for typical internal flows through micro-channels and external flows past micro flat plates, and combined with the Navier-Stokes equations to be a hybrid scheme for subsonic, rarefied gas flows. Second, the focus is moved to the microscopic characteristic of China stock market, particularly the price correlation between stock deals. A very interesting phenomenon was found that showed a reverse transition behaviour between two neighbouring price changes. This behaviour significantly differs from the transition rules for atomic and molecular energy levels, and it is very helpful to understand the essential difference between stock markets and nature.

Influence of processing temperature on microstructure and microhardness of copper subjected to high-pressure torsion

Cu samples were subjected to high-pressure torsion (HPT) with up to 6 turns at room temperature (RT) and liquid nitrogen temperature (LNT), respectively. The effects of temperature on grain refinement and microhardness variation were investigated. For the samples after HPT processing at RT, the grain size reduced from 43 mu m to 265 nm, and the Vickers microhardness increased from HV52 to HV140. However, for the samples after HPT processing at LNT, the value of microhardness reached its maximum of HV150 near the center of the sample and it decreased to HV80 at the periphery region. Microstructure observations revealed that HPT straining at LNT induced lamellar structures with thickness less than 100 nm appearing near the central region of the sample, but further deformation induced an inhomogeneous distribution of grain sizes, with submicrometer-sized grains embedded inside micrometer-sized grains. The submicrometer-sized grains with high dislocation density indicated their nonequilibrium nature. On the contrary, the micrometer-sized grains were nearly free of dislocation, without obvious deformation trace remaining in them. These images demonstrated that the appearance of micrometer-sized grains is the result of abnormal grain growth of the deformed fine grains.

Solving MIN UR problem by triangle evolution algorithm with archiving and niche techniques

In this paper, as an extension of minimum unsatisfied linear relations problem (MIN ULR), the minimum unsatisfied relations (MIN UR) problem is investigated. A triangle evolution algorithm with archiving and niche techniques is proposed for MIN UR problem. Different with algorithms in literature, it solves MIN problem directly, rather than transforming it into many sub-problems. The proposed algorithm is also applicable for the special case of MIN UR, in which it involves some mandatory relations. Numerical results show that the algorithm is effective for MIN UR problem and it outperforms Sadegh's algorithm in sense of the resulted minimum inconsistency number, even though the test problems are linear.

Development and transition of spiral wave in the coupled Hindmarsh-Rose neurons in two-dimensional space

The dynamics and the transition of spiral waves in the coupled Hindmarsh-Rose (H-R) neurons in two-dimensional space are investigated in the paper. It is found that the spiral wave can be induced and developed in the coupled HR neurons in two-dimensional space, with appropriate initial values and a parameter region given. However, the spiral wave could encounter instability when the intensity of the external current reaches a threshold value of 1.945. The transition of spiral wave is found to be affected by coupling intensity D and bifurcation parameter r. The spiral wave becomes sparse as the coupling intensity increases, while the spiral wave is eliminated and the whole neuronal system becomes homogeneous as the bifurcation parameter increases to a certain threshold value. Then the coupling action of the four sub-adjacent neurons, which is described by coupling coefficient D', is also considered, and it is found that the spiral wave begins to breakup due to the introduced coupling action from the sub-adjacent neurons (or sites) and together with the coupling action of the nearest-neighbour neurons, which is described by the coupling intensity D.