Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures
| Data(s) |
1998
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|---|---|
| Resumo |
Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed. Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:18Z (GMT). No. of bitstreams: 1 3034.pdf: 815142 bytes, checksum: e6156a05a630870ba1e17dab7cf07ab6 (MD5) Previous issue date: 1998 SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Si JJ; Yang QQ; Wang HJ; Wang QM .Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures .见：SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,49-52 |
| Palavras-Chave | #光电子学 #Si/SiGe #quantum dot #electroluminescence #photoluminescence |
| Tipo |
会议论文 |
