996 resultados para cross polarization


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The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.

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The influence of the orientations of both polarizer and analyzer on modulation depth of spatially distributed interferograms for static polarization interference imaging spectrometer (SPIIS) is analyzed. A generally, theoretical relationship to determine the modulation depth of a SPIIS is derived. The special cases of maximum modulation depth (V = 1) and the minimum modulation depth (V = 0) are examined. Our results will provide a theoretical and practical guide for studying, developing and engineering polarization interference imaging spectrometers. (C) 2003 Elsevier B.V. All rights reserved.

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This paper describes the design of an interference imaging spectrometer. A static Polarization Imaging Spectrometer (PIS) based on a single Savart polariscope has been developed. It produces the interferogram and target's image in the spatial domain which are recorded by using a two-dimensional (2D) CCD detector. Imaging lens localizes the interference fringes and target's image coincident with the plane of detector, thereby facilitating an extremely compact design. The spectrum of the input light is reconstructed through the Fourier-transform of the interferogram. The total optics is as small as 20 x 6 cm phi in size and the spectral resolution of the prototype system is 97.66 cm(-1) between 25,000 and 10, 000 cm(-1). The polarization interference imaging device has advantages of ultra-compact size, wide field of view, high throughput and without any moving parts. (C) 2002 Published by Elsevier Science B.V.

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Hot electrons excited from the valence band by linearly polarized laser light are characterized by certain angular distributions in momenta. Owing to such angular distributions in momenta, the photoluminescence from the hot electrons shows a certain degree of polarization. A theoretical treatment of this effect observed in the photoluminescence in quantum wells is given, showing that the effect depends strongly on heavy and light hole mixing. The very large disparity between the experimentally observed and theoretically expected values of the degree of polarization in the hot-electron photoluminescence suggests the presence of random quasielastic scattering. The effects of such additional scattering and the presence of a perpendicular magnetic field are incorporated into the theory. it is shown that the measurements of the degree of polarization observed in the hot electron photoluminescence, with and without an applied perpendicular magnetic field can serve to determine the time constants for both LO-phonon inelastic and random quasielastic scattering. As an example, these time constants are determined for the experiments reported in the literature.

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The linear character of the polarization of the luminescence in porous Si is studied experimentally, and the corresponding luminescence characteristics in quantum wires are studied theoretically using a quantum cylindrical model in the framework of the effective-mass theory. From the experimental and theoretical results it is concluded that there is a stronger linear polarization parallel to the wire direction than there is perpendicular to the wire, and that it is connected with the valence band structure in quantum confinement in two directions. The theoretical photoluminescence spectra of the parallel and perpendicular polarization directions, and the degree of polarization as functions of the radius of the wire and the temperature are obtained for In0.53Ga0.47As quantum wires and porous silicon. From the theory, we demonstrated that the degree of polarization decreases with increasing temperature and radius, and that this effect is more apparent for porous Si. The theoretical results are in good agreement with the experimental results for the InGaAs quantum wires, and in qualitative agreement with those for the porous silicon.