989 resultados para STACKING-FAULT ENERGY


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A solid state galvanic cell incorporating yttria-stabilized zirconia electrolyte and ruthenium(IV) oxide electrodes has been used to measure the equilibrium chemical potential of oxygen corresponding to the decomposition of CuCrO4 in the range 590–760 K. For the reaction CuO(tenorite) + CuCr2O4(spinel) + 1.5O2(g)→2CuCrO4(orth), ΔGXXX = −183540 + 249.6T(±900) J mol−1. The decomposition temperature of CuCrO4 in pure oxygen at a pressure of 1.01 × 105 Pa is 735(±1) K. By combining the results obtained in this study with data on the Gibbs energy of formation of CuCr2O4 and CuCrO2 reported earlier, the standard Gibbs energy of formation of CuCrO4 and the phase relations in the system Cu-Cr-O at temperatures below 735 K have been deduced. Electron microscopic studies have indicated that the decomposition of CuCrO4 to CuCr2O4 is topotactic.

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Phase relations in the pseudoternary system NiO-CaO-SiO2 at 1373 K are established. The coexisting phases are identified by X-ray diffraction and energy-dispersive X-ray analysis of equilibrated samples. There is only one quaternary oxide CaNiSi2O6 with clinopyroxene structure. The Gibbs energy of formation of CaNiSi2O6 is measured using a solid state galvanic cell incorporating stabilized zirconia as the solid electrolyte in the temperature range of 1000 to 1400 K:Pt, Ni + SiO2 + CaSiO3 + CaNiSi2O6 \ (Y2O3)ZrO2 \ Ni + NiO, Pt From the electromotive force (emf) of the cell, the Gibbs energy of formation of CaNiSi2O6 from NiO, SiO2, and CaSiO3 is obtained. To derive the Gibbs energy of formation of the quaternary oxide from component binary oxides, the free energy of formation of CaSiO, is determined separately using a solid state cell based on single crystal CaF2 as the electrolyte: Pt, O-2, CaO + CaF2 \ CaF2 \ CaSiO3 + SiO2 + CaF2, O-2, Pt The results can be expressed by the following equations: NiO (r.s) + CaO (r.s) + 2SiO(2) (qz) --> CaNiSi2O6 (pyr) Delta G degrees = -115,700 + 10.63T (+/-100) J mol(-1) CaO (r.s) + SiO2 (qz) --> CaSiO3 (wol) Delta G degrees = -90,030 -0.61T (+/-60) J mol(-1).

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The standard Gibbs energy of formation of the spinel MgAl2O4 from component oxides, MgO and α-Al2O3, has been determined in the temperature range 900 to 1250 K using a solid-state cell incorporating single-crystal CaF2 as the solid electrolyte. The cell can be represented as—Pt,O2,MgO+MgF2|CaF2|MgF2+MgAl2O4+α-Al2O3,O2,Pt—The standard Gibbs energy of formation from binary oxides, computed from the reversible emf, can be represented by the expression—capdeltaG°f,ox=−23600 − 5.91T(±150) J/mol—The ‘second-law’ enthalpy of formation of MgAl2O4 obtained in this study is in good agreement with high-temperature solution calorimetric studies reported in the literature.

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The activity of Ti02 in single and two··phase regions of ihe system ZrOrTi02 has heen measured lIsing solid state cells based on yttria··doped tho ria (YDT) as the solid electrolyte at 1373 K. The cells used can be represented as: Pt, Tio.07PtO.Y3 + Zrj.,Tix0 2 / YDT / Ti02 + Tio.07Pto.93, Pt Pt, Tio.07Pto.93 + ZrJ.xTix02 + ZrTi04 / YDT / Ti02+ Tio.07PtO.93, Pt In each cell the composition of Pt-Ti alloy was identical at hoth electrodes. The emf of the cell is therefore directly related to the activity of Ti02 in oxide phase or oxide phase mixture: aTiO~ :;: cxp (-4FE/RT). The activity coefficient of Ti02 in th~ zirconia-rich solid solution with monoclinic structure (CUl2 2" XTi02 2" 0) can be expressed as:In the zirconia-rich solid solution with tetragonal structure (0.085 2" X ri02 2" 0.03), the activity coefficient is given by:In YTi02 (± 0.012) = 2.354 (1-XTiO? )2 +0.064 The standard Gibbs energy of formation of ZrTi04 is -5650 (± 200) J/mol at 1373 K .

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he standard Gibbs energy of formation of CaCu3Ti4O12 (CCTO) from CaTiO3, CuO and TiO2 has been determined as a function of temperature from 925 to 1350 K using a solid-state electrochemical cell with yttria-stabilized zirconia as the solid electrolyte. Combining this result with information in the literature on CaTiO3, the standard Gibbs energy of formation of CCTO from its component binary oxides, CaO, CuO and TiO2, has been obtained: View the MathML source (CaCu3Ti4O12)/J mol−1 (±600) = −125231 + 6.57 (T/K). The oxygen chemical potential corresponding to the reduction of CCTO to CaTiO3, TiO2 and Cu2O has been calculated from the electrochemical measurements as a function of temperature and compared on an Ellingham diagram with those for the reduction of CuO to Cu2O and Cu2O to Cu. The oxygen partial pressures corresponding to the reduction reactions at any chosen temperature can be read using the nomograms provided on either side of the diagram. The effect of the oxygen partial pressure on phase relations in the pseudo-ternary system CaO–CuO/Cu2O–TiO2 at 1273 K has been evaluated. The phase diagrams allow identification of secondary phases that may form during the synthesis of the CCTO under equilibrium conditions. The secondary phases may have a significant effect on the extrinsic component of the colossal dielectric response of CCTO.

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An isothermal section of the system Al2O3-CaO-CoO at 1500 K has been established by equilibrating 22 samples of different compositions at high temperature and phase identification by optical and scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy after quenching to room temperature. Only one quaternary oxide, Ca3CoAl4O10, was identified inside the ternary triangle. Based on the phase relations, a solid-state electrochemical cell was designed to measure the Gibbs energy of formation of Ca3CoAl4O10 in the temperature range from 1150 to 1500 K. Calcia-stabilized zirconia was used as the solid electrolyte and a mixture of Co + CoO as the reference electrode. The cell can be represented as: ( - )\textPt,\textCaAl 2 \textO 4 + \textCa 1 2 \textAl 1 4 \textO 3 3 + \textCa 3 \textCoAl 4 \textO 10 + \textCo//(CaO)ZrO 2 \text// \textCoO + \textCo,\text Pt ( + ). (−)PtCaAl2O4+Ca12Al14O33+Ca3CoAl4O10+Co//(CaO)ZrO2//CoO+Co Pt (+) From the emf of the cell, the standard Gibbs energy change for the Ca3CoAl4O10 formation reaction, CoO + 3/5CaAl2O4 + 1/5Ca12Al14O33 → Ca3CoAl4O10, is obtained as a function of temperature: \Updelta Gr\texto Unknown control sequence '\Updelta'/J mol−1 (±50) = −2673 + 0.289 (T/K). The standard Gibbs energy of formation of Ca3CoAl4O10 from its component binary oxides, Al2O3, CaO, and CoO is derived as a function of temperature. The standard entropy and enthalpy of formation of Ca3CoAl4O10 at 298.15 K are evaluated. Chemical potential diagrams for the system Al2O3-CaO-CoO at 1500 K are presented based on the results of this study and auxiliary information from the literature.

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We generalize the Nozieres-Schmitt-Rink method to study the repulsive Fermi gas in the absence of molecule formation, i.e., in the so-called ``upper branch.'' We find that the system remains stable except close to resonance at sufficiently low temperatures. With increasing scattering length, the energy density of the system attains a maximum at a positive scattering length before resonance. This is shown to arise from Pauli blocking which causes the bound states of fermion pairs of different momenta to disappear at different scattering lengths. At the point of maximum energy, the compressibility of the system is substantially reduced, leading to a sizable uniform density core in a trapped gas. The change in spin susceptibility with increasing scattering length is moderate and does not indicate any magnetic instability. These features should also manifest in Fermi gases with unequal masses and/or spin populations.

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A new scheme for robust estimation of the partial state of linear time-invariant multivariable systems is presented, and it is shown how this may be used for the detection of sensor faults in such systems. We consider an observer to be robust if it generates a faithful estimate of the plant state in the face of modelling uncertainty or plant perturbations. Using the Stable Factorization approach we formulate the problem of optimal robust observer design by minimizing an appropriate norm on the estimation error. A logical candidate is the 2-norm, corresponding to an H�¿ optimization problem, for which solutions are readily available. In the special case of a stable plant, the optimal fault diagnosis scheme reduces to an internal model control architecture.

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Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature.

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Energy Harvesting (EH) nodes, which harvest energy from the environment in order to communicate over a wireless link, promise perpetual operation of a wireless network with battery-powered nodes. In this paper, we address the throughput optimization problem for a rate-adaptive EH node that chooses its rate from a set of discrete rates and adjusts its power depending on its channel gain and battery state. First, we show that the optimal throughput of an EH node is upper bounded by the throughput achievable by a node that is subject only to an average power constraint. We then propose a simple transmission scheme for an EH node that achieves an average throughput close to the upper bound. The scheme's parameters can be made to account for energy overheads such as battery non-idealities and the energy required for sensing and processing. The effect of these overheads on the average throughput is also analytically characterized.

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A deep‐level transient spectroscopy (DLTS) technique is reported for determining the capture cross‐section activation energy directly. Conventionally, the capture activation energy is obtained from the temperature dependence of the capture cross section. Capture cross‐section measurement is often very doubtful due to many intrinsic errors and is more critical for nonexponential capture kinetics. The essence of this technique is to use an emission pulse to allow the defects to emit electrons and the transient signal from capture process due to a large capture barrier was analyzed, in contrast with the emission signal in conventional DLTS. This technique has been applied for determining the capture barrier for silicon‐related DX centers in AlxGa1−xAs for different AlAs mole fractions.

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Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at. % have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax ( ∼ 0.54 C/m2 at ∼ 60 MV/m) as well as a maximum W ( ∼ 14.9 J/cc at ∼ 60 MV/m) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations.

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An extension of Rizk's analysis to cover any type of switching is presented for calculating the residual current and recovery voltage in a singlephase switched transmission system. Equations for the determination of the current and voltage are shown, and the method has been used for the analysis of a series- and shunt-compensated line.Three possible switching methods for the effective control of the recovery voltage and residual current are discussed: normal switching, switching at the ends of the line and switching of the series capacitors.

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The paper presents a graphical-numerical method for determining the transient stability limits of a two-machine system under the usual assumptions of constant input, no damping and constant voltage behind transient reactance. The method presented is based on the phase-plane criterion,1, 2 in contrast to the usual step-by-step and equal-area methods. For the transient stability limit of a two-machine system, under the assumptions stated, the sum of the kinetic energy and the potential energy, at the instant of fault clearing, should just be equal to the maximum value of the potential energy which the machines can accommodate with the fault cleared. The assumption of constant voltage behind transient reactance is then discarded in favour of the more accurate assumption of constant field flux linkages. Finally, the method is extended to include the effect of field decrement and damping. A number of examples corresponding to each case are worked out, and the results obtained by the proposed method are compared with those obtained by the usual methods.