Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Frictional properties of faults : from observation on the Longitudinal Valley Fault, Taiwan, to dynamic simulations

Faults can slip either aseismically or through episodic seismic ruptures, but we still do not understand the factors which determine the partitioning between these two modes of slip. This challenge can now be addressed thanks to the dense set of geodetic and seismological networks that have been deployed in various areas with active tectonics. The data from such networks, as well as modern remote sensing techniques, indeed allow documenting of the spatial and temporal variability of slip mode and give some insight. This is the approach taken in this study, which is focused on the Longitudinal Valley Fault (LVF) in Eastern Taiwan. This fault is particularly appropriate since the very fast slip rate (about 5 cm/yr) is accommodated by both seismic and aseismic slip. Deformation of anthropogenic features shows that aseismic creep accounts for a significant fraction of fault slip near the surface, but this fault also released energy seismically, since it has produced five M_w>6.8 earthquakes in 1951 and 2003. Moreover, owing to the thrust component of slip, the fault zone is exhumed which allows investigation of deformation mechanisms. In order to put constraint on the factors that control the mode of slip, we apply a multidisciplinary approach that combines modeling of geodetic observations, structural analysis and numerical simulation of the "seismic cycle". Analyzing a dense set of geodetic and seismological data across the Longitudinal Valley, including campaign-mode GPS, continuous GPS (cGPS), leveling, accelerometric, and InSAR data, we document the partitioning between seismic and aseismic slip on the fault. For the time period 1992 to 2011, we found that about 80-90% of slip on the LVF in the 0-26 km seismogenic depth range is actually aseismic. The clay-rich Lichi M\'elange is identified as the key factor promoting creep at shallow depth. Microstructural investigations show that deformation within the fault zone must have resulted from a combination of frictional sliding at grain boundaries, cataclasis and pressure solution creep. Numerical modeling of earthquake sequences have been performed to investigate the possibility of reproducing the results from the kinematic inversion of geodetic and seismological data on the LVF. We first investigate the different modeling strategy that was developed to explore the role and relative importance of different factors on the manner in which slip accumulates on faults. We compare the results of quasi dynamic simulations and fully dynamic ones, and we conclude that ignoring the transient wave-mediated stress transfers would be inappropriate. We therefore carry on fully dynamic simulations and succeed in qualitatively reproducing the wide range of observations for the southern segment of the LVF. We conclude that the spatio-temporal evolution of fault slip on the Longitudinal Valley Fault over 1997-2011 is consistent to first order with prediction from a simple model in which a velocity-weakening patch is embedded in a velocity-strengthening area.