The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. Low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (C) 1998 Elsevier Science B.V. All rights reserved.

Numerical evaluation of energy loss rate for hot carriers in quantum wells

Using the Frohlich potential associated with realistic optical phonon modes in quantum well systems, the energy loss rates of hot electrons, holes, and electron-hole pairs are calculated, with special emphasis on the effects of carrier density, hot phonon population, quantum well width, and phonon dispersion on the hot-carrier relaxation process in quasi-two-dimensional systems. (C) 1998 Academic Press Limited.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Simulation on Gain Recovery of Quantum Dot Semiconductor Optical Amplifiers by Rate Equation

The gain recoveries in quantum dot semiconductor optical amplifiers are numerically studied by rate equation models. Similar to the optical pump-probe experiment, the injection of double optical pulses is used to simulate the gain recovery of a weak continuous signal for the QD SOAs. The gain recoveries are fitted by a response function with multiple exponential terms. For the pulses duration of 10 ps, the gain recovery can be described by three exponential terms with the time constants, and for the pulse with the width of 150 fs, the gain recovery can be described by two exponential terms, the reason is that the short pulse does not consume lot of carriers.

Eye-safe, high-energy, single-mode all-fiber laser with widely tunable repetition rate

We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.

Effect of cryoprotectants on hatching rate of red seabream (Pagrus major) embryos

The objectives were to investigate the effect of cryoprotectants on the hatching rate of red seabream embryos. Heart-beat embryos were immersed in: five permeable cryoprotectants, dimethyl sulfoxide (DMSO), glycerol (Gly), methanol (MeOH), 1,2-propylene glycol (PG), and ethylene glycol (EG). in concentrations of 5-30% for 10, 30, or 60 min; and two non-permeable cryoprotectants: polyvinylpyrrolidone (PVP), and sucrose (in concentrations of 5-20% for 10 or 30 min). The embryos were then washed and incubated in filtered seawater until hatching occurred. The hatching rate of the embryos treated with permeable cryoprotectants decreased (P < 0.05) with increased concentration and duration of exposure. In addition, PG was the least toxic permeable cryoprotectant, followed by DMSO and EG, whereas Gly and MeOH were the most toxic. At a concentration of 15% and 30 min exposure, the hatching rate of the embryos immersed in PG was 93.3 +/- 7.0% (mean +/- S.D.), however. in DMSO. EG, Gly. and MeOH, it was 82.7 +/- 10.4, 22.0 +/- 5.7, 0.0 +/- 0.0, and 0.0 +/- 0.0%, respectively. Hatching rate of embryos treated with PVP decreased (P < 0.05) with the increase of concentration and exposure time, whereas for embryos treated with sucrose, there was no significant decrease in comparison with the control at the concentrations used. (C) 2008 Elsevier Inc. All rights reserved.

ON THE RATE-EQUATIONS OF SEMICONDUCTOR-LASERS FOR MEASURING SPONTANEOUS EMISSION FACTOR

The rate equations used for measuring spontaneous emission factor beta is examined through the comparison of numerical results, The results show that beta obtained by using total spontaneous emission rate R(sp) = N/tau sp is about double of that using R(sp) = BN2, The magnitude difference between the measured beta and that predicted by classical theory [8] will disappear by using more reasonable R(sp) = BN2. The results also show that the magnitude of beta may be underestimated by ignoring the nonradiative recombination rates.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN_x:H by HF solution. A low etch rate was achieved by increasing the SiH_4 gas flow rate or annealing temperature, or decreasing the NH_3 and N_2 gas flow rate. Concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO_2 and SiN_x:H. A high etching selectivity of SiO_2 over SiN_x:H was obtained using highly concentrated buffered HF.

1 GHz Repetition Rate CW Mode-locked Nd∶YVO_4 Laser

A diode-pumped CW mode-locked Nd