994 resultados para vapour transportation deposition


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Fast plasma sintering deposition of SiC nano-structured coatings was achieved using a specially designed non-transferred dc plasma torch operated at reduced pressure. Employing the Taguchi method, the deposition parameters were optimized and verified. With the optimized combination of deposition parameters, homogeneous SiC coatings were deposited on relatively large area substrates of Φ50 mm and 50×50 mm with a deposition rate as high as 20 μm/min. Ablation test showed that such coatings can be used as oxidation resistance coatings in high temperature oxidizing environment.

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Because of its high energy density direct current(dc)thermal plasmas are widely accepted as a processing medium which facilitates high processing rates high fluxes of radical species the potential for smaller jnstallations a wide choice of reactants and high quench rates[1].A broad range of industrial processing methods have been developed based on dc plasma technology. However,nonstationary features limited new applications of dc plasma in advanced processing, where reliability£¬reproducibility and precise controllability are required£. These challenges call for better understanding of the arc and jet behavior over a wide range of generating parameters and a comprehensive control of every aspect of lhe plasma processing.

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We report the electrochemical growth of gold nanowires with controlled dimensions and crystallinity. By systematically varying the deposition conditions, both polycrystalline and single-crystalline wires with diameters between 20 and 100 nm are successfully synthesized in etched ion-track membranes. The nanowires are characterized using scanning electron microscopy, high resolution transmission electron microscopy, scanning tunnelling microscopy and x-ray diffraction. The influence of the deposition parameters, especially those of the electrolyte, on the nanowire structure is investigated. Gold sulfite electrolytes lead to polycrystalline structure at the temperatures and voltages employed. In contrast, gold cyanide solution favours the growth of single crystals at temperatures between 50 and 65 degrees C under both direct current and reverse pulse current deposition conditions. The single-crystalline wires possess a [110] preferred orientation.

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We found a novel morphology variation of carbon deposition derived from CH4 decomposition over NI-based catalysts. By altering the chemical composition and particle size of Ni-based catalysts, carbon filaments, nanofibres and nanotubes were observed over conventional Ni/y-Al2O3, Ni-Co/gamma-Al2O3 and nanoscale Ni-Co/gamma-Al2O3 catalysts, respectively. The simple introduction of Co into a conventional Ni/gamma-Al2O3 catalyst can vary the carbon deposition from amorphous filamentous carbon to ordered carbon fibres. Moreover, carbon nanotubes with uniform diameter distribution can be obtained over nanosized Ni-Co/gamma-Al2O3 catalyst particles. In addition, the oxidation behaviour of the different deposited carbon was studied by using a temperature-programmed oxidation technique. This work provides a simple strategy to control over the size and morphology of the carbon deposition from catalytic decomposition of CH4.