997 resultados para root density


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The flame surface density approach to the modeling of premixed turbulent combustion is well established in the context of Reynolds-averaged simulations. For the future, it is necessary to consider large-eddy simulation (LES), which is likely to offer major advantages in terms of physical accuracy, particularly for unsteady combustion problems. LES relies on spatial filtering for the removal of unresolved phenomena whose characteristic length scales are smaller than the computational grid scale. Thus, there is a need for soundly based physical modeling at the subgrid scales. The aim of this paper is to explore the usefulness of the flame surface density concept as a basis for LES modeling of premixed turbulent combustion. A transport equation for the filtered flame surface density is presented, and models are proposed for unclosed terms. Comparison with Reynolds-averaged modeling is shown to reveal some interesting similarities and differences. These were exploited together with known physics and statistical results from experiment and from direct numerical stimulation in order to gain insight and refine the modeling. The model has been implemented in a combustion LES code together with standard models for scalar and momentum transport. Computational results were obtained for a simple three-dimensional flame propagation test problem, and the relative importance of contributing terms in the modeled equation for flame surface density was assessed. Straining and curvature are shown to have a major influence at both the resolved and subgrid levels.

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We used a cyclic reactive ion etching (RIE) process to increase the Co catalyst density on a cobalt disilicide (CoSi2) substrate for carbon nanotube (CNT) growth. Each cycle of catalyst formation consists of a room temperature RIE step and an annealing step at 450 °C. The RIE step transfers the top-surface of CoSi2 into cobalt fluoride; while the annealing reduces the fluoride into metallic Co nanoparticles. We have optimized this cyclic RIE process and determined that the catalyst density can be doubled in three cycles, resulting in a final CNT shell density of 6.6 × 10 11 walls·cm-2. This work demonstrates a very effective approach to increase the CNT density grown directly on silicides. © 2014 AIP Publishing LLC.

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Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.

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In order to investigate the effects of microorganisms and their urease activities in macrophytic root zones on pollutant removal, four small-scale plots (SSPs) of vertical/reverse-vertical flow wetlands were set up to determine: a) the relationship between the abundance of microorganisms in the root zones and water purification efficiency; and b) the relationship between urease activities in the root zones and pollutant removal in a constructed wetland system. Total numbers of the microbial population (bacteria, fungi, and actinomyces) along with urease activities in the macrophytic root zones were determined. In addition, the relationships between microbial populations and urease activities as well as the wastewater purification efficiencies of total phosphorus (TP), total Kjeldahl nitrogen (TKN), biochemical oxygen demand in 5 days (BOD5), and chemical oxygen demand (COD) were also analyzed. The results showed that there was a highly significant positive correlation (r = 0.9772, P < 0.01) between the number of bacteria in the root zones and BOD5 removal efficiency and a significant negative correlation (r = -0.9092, P < 0.05) between the number of fungi and the removal efficiency of TKN. Meanwhile, there was a significant positive correlation (r = 0.8830, P < 0.05) between urease activities in the root zones and the removal efficiency of TKN. Thus, during wastewater treatment in a constructed wetland system, microorganism and urease activities in the root zones were very important factors.

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Specimens of the calanoid copepod, Leptodiaptomus minutus, collected in June 1994 in oligotrophic: north temperate Crystal Lake, were infested with the stalked ciliate Epistylis lacustris. E. lacustris was highly specific to L. minutus and no other coexisting zooplankters were infested. Excluding nauplii, nearly 70% of copepods carried 1-20 ciliates, although the maximum load was as high as 250 ciliates. A lower percentage of nauplii were infested by the ciliate; those that were infested had a lower ciliate load than other copepod stages. Infestation by ciliates had no significant influence on the average egg number of female copepods. In a field experiment, higher copepod densities in enclosures resulted in a significantly higher infestation rate, but the ciliate load per individual copepod did not differ significantly among treatments.

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Experiments in tanks and cages were conducted to examine the effects of stocking density and body size of the Mitten crab (Eriocheir sinensis) on transplanted submersed macrophyte biomass. The early juvenile crab with 7.0 +/-0.6 mm. carapace width (CW) had little effect on plant biomass, regardless of the stocking densities. However, larger crabs (CW: 18.0 +/-2.2,35.0 +/-3.6, and 60.0 +/-5.7 mm) significantly influenced plant biomass, especially at large stocking densities. Predictive models, using crab body size and stocking density, were generated to demonstrate effect of the mitten crab on the changes Of plant biomass. The results indicate that dense mitten crab populations may adversely affect aquatic plant communities, particularly when its animal food resources are scarce.

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We examined the responses of zooplankton community, water transparency, chlorophyll a and nutrients to manipulation of density of silver carp (Hypophthyalmichthys molitrix) in an one-way factorial experiment using enclosures placed in Donghu (East Lake, 30 degrees 33' N, 114 degrees 23' E), located in Wuhan, P. R. China. Enclosures (18.75 m(3)) were treated with four silver carp densities, 0, 81, 225, 485 g/m(2). Total zooplankton abundance (excluding nauplii and rotifers except for Asplanchna sp.) and the mean size of dominant cladoceran species were significantly greater in enclosures with 0 and 81 fish densities than those in enclosures with 225 and 485 fish densities. Water transparency also improved significantly when silver carp densities were 0 or 81 g/m(2). We did not find significant effects of silver carp density on chlorophyll a, total phosphorus, or total nitrogen concentrations. We conclude that by reducing planktivorous fish to below the current density (190 g/m(2)), the zooplankton community can be shifted from the dominance of small-bodied Moina sp. to dominance of large-bodied Daphnia sp. Further, the water clarity can be increased.

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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-07T13:34:11Z No. of bitstreams: 1 Origin of antiferromagnetism in CoO A density functional theory study.pdf: 263570 bytes, checksum: 9128a541375fb9fe9f761fc02ece4210 (MD5)

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The alternate combinational approach of genetic algorithm and neural network (AGANN) has been presented to correct the systematic error of the density functional theory (DFT) calculation. It treats the DFT as a black box and models the error through external statistical information. As a demonstration, the AGANN method has been applied in the correction of the lattice energies from the DFT calculation for 72 metal halides and hydrides. Through the AGANN correction, the mean absolute value of the relative errors of the calculated lattice energies to the experimental values decreases from 4.93% to 1.20% in the testing set. For comparison, the neural network approach reduces the mean value to 2.56%. And for the common combinational approach of genetic algorithm and neural network, the value drops to 2.15%. The multiple linear regression method almost has no correction effect here.

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A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

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Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.

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By utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high-mobility low density two-dimensional electron gas in a GaAs/Al0.35Ga0.65As heterostructure in the dependence on temperature from 1.5 to 30 K. It is found that the spin relaxation/dephasing time under a magnetic field of 0.5 T exhibits a maximum of 3.12 ns around 14 K, which is superimposed on an increasing background with rising temperature. The appearance of the maximum is ascribed to that at the temperature where the crossover from the degenerate to the nondegenerate regime takes place, electron-electron Coulomb scattering becomes strongest, and thus inhomogeneous precession broadening due to the D'yakonov-Perel' mechanism becomes weakest. These results agree with the recent theoretical predictions [J. Zhou et al., Phys. Rev. B 15, 045305 (2007)], which verify the importance of electron-electron Coulomb scattering to electron spin relaxation/dephasing.

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Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

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High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 degrees C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. (C) 2008 Elsevier B.V. All rights reserved.