重离子耗散反应激发函数振荡结构的实验研究

直到八十年代中期，人名才发现耗散反应激发函数中存在振荡结构这种新现象。通过对激发函数振荡结构能量自关联函数的研究是获得复合核能级宽度的一个重要手段，Brick推广了Ericson的复合核统计理论，并成功地用于分析耗散反应激发函数振荡结构的研究，提取相应的能量相关宽度Г。本文报道了19F+51V耗散反应激发函数振荡结构的实验研究结果，用能级部分重叠模型对角动量相干引起的截面涨落、能量自关联函数进行了计算分析。实验中采用ΔE-E粒子鉴别方法和飞行时间TOF测量技术队102.25Mev~109.5Mev19F+51V反应类弹产物同时进行电荷和质量鉴别。首次在各个元素、同量异位素（质量数A为常数）和同位素的耗散反应激发函数中观察到振荡结构，并进一步证实了反应产物的各个出射道之间存在着相关。检验了用小角度弹性散射计数做相对归一对激发函数振荡结构研究可能造成的影响。分别采用能量自关联函数方法和谱密度方法提取了各个激发函数的能量相关宽度Г，其值大小为~350kev，并与出射道的电荷数Z、质量数A和中质比N/Z有很大的依赖关系，表明出射产物与入射弹核的差别越打所需的反应时间久越长。首次得到了Г随N/Z值变化的趋势，Г随N/Z的分布为Gauss型，通过分析分布的宽度得到其大小随相互作用时间的增长而线性增大的结果，并进一步提取了电荷扩散系数，证实了反应系统已达到电荷平衡。Г的数值随出射角的增大有减小的趋势。双核系统的转动造成了Г随出射角的变化关系，实验提取的双核系统平均角速度发生了较强的阻尼。用能级部分重叠模型在适当的精度内对激发函数和能力自关联函数进行了模拟。计算分析说明入射道的动能大多数转化为双核系统的转动能，只有较少部分转化为双核系统的内禀激发能，双核系统被激发到能级密度不太大的区域，能级之间的部分重叠引起截面的振荡行为。入射道角动量的相互干涉、双核系统能级的部分重叠和出射道的相互关联使得耗散反应的激发函数表现出其特有的规律性。

SSC120KW高频发射机改进可行性方案研究

我所SSC120KW高频发射机是HIRFL（Heavy Ion Research Facility, LanZhou）的一个重要组成部分，长期的调机以及运行经验表明：两台发射机存在调机程序复杂运行不稳定、运行维护费用高等缺点。本论文讨论一种改进方案，并且介绍了大功率放大器的设计方法。 该方案采用国产电子管TH537作为功率放大管，槽路电感固定，采用一个可变电容调谐，另一个可变电容调整负载。槽路结构简单，调整方便，同时槽路元件较现在方案少，能节省建造和维护费用。论文中详细介绍了电子管特性的计算，槽路得设计方法，并对中和与消除寄生振荡的方法作了扼要的介绍。

HIRFL束流相位测量系统的研究和改进

兰州重离子研究装置（Heavy Ion Research Facility at LanZhou,HIRFL）是由一台1.7m扇聚焦回旋加速器（SFC）与一台能量常数K=450的分离扇回旋加速器（SSC）组成的加速器系统。束流相位测量系统式束流诊断系统中的一个重要部分，对等时场优化等具有十分重要的作用。HIRFL束流中心相位测量系统于1985年完成了桌面实验，但由于测量精度低，现场抗干扰能力差，一直未能投入使用。 本课题的目的就是找出原系统存在的问题，逐一解决，以便提高其可靠性与测量精度，达到设计要求。 在通过一系列的电子学部分改进和SSC中心相位探针改造之后，于1995年7月第一次测出了SSC中心束流相位。此后，逐步完善改进电子学硬件部分，同时全新设计了系统控制软件，提高了在SFC和SSC上束流相位的测量精度，终于使该系统达到了测量精度为±2.75°~±1.5°的水平。 本论文第一、二章阐述了束流中心相位测量原理和HIRFL束流中心相位测量系统的工作原理，这是本工作的基础和出发点。 在本论文的第三章中，分析了原系统中存在的主要问题。实践使用中可以看出原系统灵敏度低，抗干扰能力差，可靠性差，测量精度低。为了定量判断系统存在的问题，我们设计了自检系统。利用自检系统我们测出原系统测量精度为±6°，且检测出原系统sin，cos正交输出异常。同时测量了原系统多路开关串话量，大多数道与道之间高于最低要求的-40dB，最差只有-20dB，证明存在严重的道间干扰。 本文的第四章中，针对原系统的可靠性差和精度低的两个问题，采取了硬件与软件两方面的各种措施，对系统加以改进。首先，为了提高系统的可靠性，必须提高系统抗干扰能力。为此，我们进行了两个方面的工作，一是根据我们现有条件自行设计了一种新的电缆电子学长度校正方法，大大减少了电缆间相差（小于0.3°），从而有效地提高了系统的抗干扰能力。这种方法不但可以用来校正相同介质电缆，而且可以用来校正不同介质电缆的电子学长度。二是设计了新的信号预选器，其串话量达到约-70dB，并完善了电磁屏蔽，使其完全达到了设计要求。在改进硬件的同时，为了提高可靠性，重新设计了系统控制软件。新的软件测量数据可靠，漏报概率为10-3，操作简便直观，并易于发展。其次，我们工作的重点是提高测量精度。根据自检结果，我们采取了如下措施： （1） 通过对自检数据进行分析，并与理论分析比较，发现问题主要存在于90°移相电路中。而其后的检测证实了这一点。重新调整90°移相电路，并对90°电缆相移进行了精确的校正，从原81.5°校正为90.6°，从而使系统的精度从±6°提高到±4°。 （2） 通过自检数据和理论分析发现鉴相器存在输出增益不平衡，在解决问题之后使系统测量精度达到了±2.75°~±1.5°。 在本文的第五章中，对加速器运行时的中心束流相位测量结果进行了详细分析。结果证明，测量数据可靠，能正确反映出磁场变化情况，测量重复误差达到了±0.5°，从而说明改进后的中心束流相位测量系统性能良好，达到了设计指标。

SFC控制系统软件设计

兰州重离子研究装置（Heavy Ion ReSearch Facility at Lanzhou, HIRFL）是我们研究所得一个大型实验装置，它包括SFC和SSC两个加速器和两条束运线。本论文比较系统地介绍了HIRFL束流诊断系统的改造和SFC分布式控制系统的设计。 在第一章中，简单介绍了国际加速器控制系统的现状和HIRFL控制系统中存在的问题。在第二章一般性地阐述了描述束流品质的各个参数，这些参数的测量原理以及测量这些参数的装置。本论文的第三章详细叙述了HIRFL束流诊断系统的改造方法、过程和结果，结果准确可靠，人机界面非常友好，给调束带来很大的方便。第四章介绍了计算机网络的基本概念，描述了在选用TCP/IP协议的条件下，利用Socket（套接字）实现Windows环境下的实时网络通信的具体过程和步骤，其中参与通信的双方是以客户机和服务器的形式存在的。第五章讲述了SFC分布式控制系统的实现，并在实时网络通信的基础上完成了ECR源扫谱程序和I/O级的网络通信程序。 论文的最后一章，介绍了对HIRFL束运线进行优化控制的一个设想，利用系统辨识的方法可以得到束运线的数学模型，并提供了自适应控制的实现细节，这也是作者对实现HIRFL优化控制的一个愿望。

Electrical conductivity of a single Au/polyaniline microfiber

We report the measurements of conductivity, I-V curve, and magnetoresistance of a single Au/polyaniline microfiber with a core-shell structure, on which a pair of platinum microleads was attached by focused ion beam. The Au/polyaniline microfiber shows a much higher conductivity (similar to 110 S/cm at 300 K) and a much weaker temperature dependence of resistance [R(4 K)/R(300 K)=5.1] as compared with those of a single polyaniline microtube [sigma(RT)=30-40 S/cm and R(4 K)/R(300 K)=16.2]. The power-law dependence of R(T)proportional to T-beta, with beta=0.38, indicates that the measured Au/polyaniline microfiber is lying in the critical regime of the metal-insulator transition. In addition, the microfiber shows a H-2 dependent positive magnetoresistance at 2, 4, and 6 K.

Surface roughness characterization of soft x-ray multilayer films on the nanometer scale

The soft x-ray reflectivity of multilayer films is affected by the surface roughness on the transverse nanometer scale. Scanning tunneling microscopy (STM) is an ideal instrument for providing high-lateral-resolution roughness measurements for soft x-ray multilayer films that cannot be obtained with other types of instruments on the transverse nanometer scale. The surface roughnesses of Mo/Si, Mo/C, and W/Si soft x-ray multilayer films prepared by an ion-beam-sputtering technique were measured with a STM on the vertical and transverse attributes. The film roughnesses and average spatial wavelengths added to the substrates depend on the multilayer film fabrication conditions, i.e., material combinations, number of layers, and individual layer thickness. These were estimated to lead to a loss of specular reflectivity and variations of the soft x-ray scattering angle distribution. This method points the way to further studies of soft x-ray multilayer film functional properties and can be used as basic guidance for selecting the best coating conditions in the fabrications of soft x-ray multilayer films. (C) 1996 American Vacuum Society.

Risk mitigation framework for a robust design process

The increasing complexity of new manufacturing processes and the continuously growing range of fabrication options mean that critical decisions about the insertion of new technologies must be made as early as possible in the design process. Mitigating the technology risks under limited knowledge is a key factor and major requirement to secure a successful development of the new technologies. In order to address this challenge, a risk mitigation methodology that incorporates both qualitative and quantitative analysis is required. This paper outlines the methodology being developed under a major UK grand challenge project - 3D-Mintegration. The main focus is on identifying the risks through identification of the product key characteristics using a product breakdown approach. The assessment of the identified risks uses quantification and prioritisation techniques to evaluate and rank the risks. Traditional statistical process control based on process capability and six sigma concepts are applied to measure the process capability as a result of the risks that have been identified. This paper also details a numerical approach that can be used to undertake risk analysis. This methodology is based on computational framework where modelling and statistical techniques are integrated. Also, an example of modeling and simulation technique is given using focused ion beam which is among the investigated in the project manufacturing processes.

Uncertainty analysis to minimise risk in designing micro-electronics manufacturing processes

A design methodology based on numerical modelling, integrated with optimisation techniques and statistical methods, to aid the process control of micro and nano-electronics based manufacturing processes is presented in this paper. The design methodology is demonstrated for a micro-machining process called Focused Ion Beam (FIB). This process has been modelled to help understand how a pre-defined geometry of micro- and nano- structures can be achieved using this technology. The process performance is characterised on the basis of developed Reduced Order Models (ROM) and are generated using results from a mathematical model of the Focused Ion Beam and Design of Experiment (DoE) methods. Two ion beam sources, Argon and Gallium ions, have been used to compare and quantify the process variable uncertainties that can be observed during the milling process. The evaluations of the process performance takes into account the uncertainties and variations of the process variables and are used to identify their impact on the reliability and quality of the fabricated structure. An optimisation based design task is to identify the optimal process conditions, by varying the process variables, so that certain quality objectives and requirements are achieved and imposed constraints are satisfied. The software tools used and developed to demonstrate the design methodology are also presented.

Optimisation methodology for risk mitigation in advanced micro-system electronics manufacturing

This paper presents a design methodology based on numerical modelling, integrated with optimisation techniques and statistical methods, to aid the development of new advanced technologies in the area of micro and nano systems. The design methodology is demonstrated for a micro-machining process called Focused Ion Beam (FIB). This process has been modelled to provide knowledge of how a pre-defined geometry can be achieved through this direct milling. The geometry characterisation is obtained using a Reduced Order Models (ROM), generated from the results of a mathematical model of the Focused Ion Beam, and Design of Experiment (DoE) methods. In this work, the focus is on the design flow methodology which includes an approach on how to include process parameter uncertainties into the process optimisation modelling framework. A discussion on the impact of the process parameters, and their variations, on the quality and performance of the fabricated structure is also presented. The design task is to identify the optimal process conditions, by altering the process parameters, so that certain reliability and confidence of the application is achieved and the imposed constraints are satisfied. The software tools used and developed to demonstrate the design methodology are also presented.

Radiative lifetimes of metastable states of negative ions

We present a technique for measuring the radiative lifetimes of metastable states of negative ions that involves the use of a heavy-ion storage ring. The method has been applied to investigate the radiative decay of the np3 2P1/2 levels of Te–(n=5) and Se–(n=4) and the 3p3 2D state of Si– for which the J=3/2 and 5/2 levels were unresolved. All of these states are metastable and decay primarily by emission of E2 and M1 radiation. Multi Configuration Dirac-Hartree-Fock calculations of rates for the transitions in Te– and Se– yielded lifetimes of 0.45 s and 4.7 s, respectively. The measured values agree well with these predicted values. In the case of the 2D state of Si–, however, our measurement was only able to set a lower limit on the lifetime. The upper limit of the lifetime that can be measured with our apparatus is set by how long the ions can be stored in the ring, a limit determined by the rate of collisional detachment. Our lower limit of 1 min for the lifetime of the 2D state is consistent with both the calculated lifetimes of 162 s for the 2D3/2 level and 27.3 h for the 2D5/2 level reported by O'Malley and Beck and 14.5 h and 12.5 h, respectively, from our Breit-Pauli calculations.

Scaling of domain periodicity with thickness measured in BaTiO3 single crystal lamellae and comparison with other ferroics

The focused ion beam microscope has been used to cut parallel-sided {100}-oriented thin lamellae of single crystal barium titanate with controlled thicknesses, ranging from 530 nm to 70 nm. Scanning transmission electron microscopy has been used to examine domain configurations. In all cases, stripe domains were observed with {011}-type domain walls in perovskite unit-cell axes, suggesting 90 degrees domains with polarization in the plane of the lamellae. The domain widths were found to vary as the square root of the lamellar thickness, consistent with Kittel's law, and its later development by Mitsui and Furuichi and by Roytburd. An investigation into the manner in which domain period adapts to thickness gradient was undertaken on both wedge-shaped lamellae and lamellae with discrete terraces. It was found that when the thickness gradient was perpendicular to the domain walls, a continuous change in domain periodicity occurred, but if the thickness gradient was parallel to the domain walls, periodicity changes were accommodated through discrete domain bifurcation. Data were then compared with other work in literature, on both ferroelectric and ferromagnetic systems, from which conclusions on the widespread applicability of Kittel's law in ferroics were made.

Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Three-dimensional photonic crystals based on macroporous silicon are fabricated by photoelectrochemical etching and subsequent focused-ion-beam drilling. Reflection measurements show a high reflection in the range of the stopgap and indicate the spectral position of the complete photonic band gap. The onset of diffraction which might influence the measurement is discussed.

Ferroelectricity and isotope effects in hydrogen-bonded KDP crystals

Based on an accurate first principles description of the energetics in H-bonded potassium-dihydrogen-phosphate crystals, we conduct a first study of nuclear quantum effects and of the changes brought about by deuteration. Tunneling is allowed only for clusters involving correlated protons and heavy ion displacements, the main effect of deuteration being a depletion of the proton probability density at the O-H-O bridge center, which in turn weakens its proton-mediated covalent bonding. The ensuing lattice expansion couples self-consistently with the proton off-centering, thus explaining both the giant isotope effect and its close connection with geometrical effects.

Excited ions in intense femtosecond laser pulses: Laser-induced recombination

Electron-ion recombination in a laser-induced electron recollision is of fundamental importance as the underlying mechanism responsible for the generation of high harmonic radiation, and hence for the production of attosecond pulse trains in the extreme ultraviolet and soft X-ray spectral regions. By using an ion beam target, remotely prepared to be partially in long-lived excited states, the recombination process has for the first time been directly observed and studied.

Electron and laser interactions with positive ions

Recent progress in laboratory-based electron-ion scattering is reviewed, and the sensitivity of observed interference structure as a probe of collision dynamics is discussed. The extension of our use of positive ions as scattering targets to photon-ion interactions is demonstrated with the first ion-beam measurements for the fragmentation of a molecular ion, H-2(+), using intense femtosecond laser pulses.