997 resultados para doping process
Resumo:
Combining experiments with first-principles calculations, we show that site-specific doping of Mn into SrTiO(3) has a decisive influence on the dielectric properties of these doped systems. We find that phonon contributions to the dielectric constant invariably decrease sharply on doping at any site. However, a sizable, random dipolar contribution only for Mn at the Sr site arises from a strong off-centric displacement of Mn in spite of Mn being in a non-d(0) state; this leads to a large dielectric constant at higher temperatures and gives rise to a relaxor ferroelectric behavior at lower temperatures. We also investigate magnetic properties in detail and critically reevaluate the possibility of a true multiglass state in such systems.
Resumo:
We present a statistical methodology for leakage power estimation, due to subthreshold and gate tunneling leakage, in the presence of process variations, for 65 nm CMOS. The circuit leakage power variations is analyzed by Monte Carlo (MC) simulations, by characterizing NAND gate library. A statistical “hybrid model” is proposed, to extend this methodology to a generic library. We demonstrate that hybrid model based statistical design results in up to 95% improvement in the prediction of worst to best corner leakage spread, with an error of less than 0.5%, with respect to worst case design.
Resumo:
Validation of the flux partitioning of species model has been illustrated. Various combinations of inequality expression for the fluxes of species A and B in two successively grown hypothetical intermetallic phases in the interdiffusion zone have been considered within the constraints of this concept. Furthermore, ratio of intrinsic diffusivities of the species A and B in those two phases has been correlated in four different cases. Moreover, complete and or partial validation or invalidation of this model with respect to both the species, has been proven theoretically and also discussed with the Co-Si system as an example.