Investigation on bioactivity of titanium dioxide thin films fabricated by electron cyclotron resonance plasma aided pulsed laser deposition

Titanium dioxide thin films with a rutile crystallinite size around 20 nm were fabricated by pulsed laser deposition (PLD) aided with an electron cyclotron resonance (ECR) plasma. With annealing treatment, the crystal size of the rutile crystallinite increased to 100 nm. The apatite-forming ability of the films as deposited and after annealing was investigated in a kind of simulated body fluid with ion concentrations nearly equal to those of human blood plasma. The results indicate that ECR aided PLD is an effective way both to fabricate bioactive titanium dioxide thin films and to optimize the bioactivity of titanium dioxide, with both crystal size and defects of the film taken into account.

Analysis of photoluminescence background of Raman spectra of carbon nanotips grown by plasma-enhanced chemical vapor deposition

Carbon nanotips with different structures were synthesized by plasma-enhanced hot filament chemical vapor deposition and plasma-enhanced chemical vapor deposition using different deposition conditions, and they were investigated by scanning electron microscopy and Raman spectroscopy. The results indicate that the photoluminescence background of the Raman spectra is different for different carbon nanotips. Additionally, the Raman spectra of the carbon nanotips synthesized using nitrogen-containing gas precursors show a peak located at about 2120 cm-1 besides the common D and G peaks. The observed difference in the photoluminescence background is related to the growth mechanisms, structural properties, and surface morphology of a-C:H and a-C:H:N nanotips, in particular, the sizes of the emissive tips.

Mechanical model and superelastic properties of carbon microcoils with circular cross-section

Here we report on an unconventional Ni-P alloy-catalyzed, high-throughput, highly reproducible chemical vapor deposition of ultralong carbon microcoils using acetylene precursor in the temperature range 700-750 °C. Scanning electron microscopy analysis reveals that the carbon microcoils have a unique double-helix structure and a uniform circular cross-section. It is shown that double-helix carbon microcoils have outstanding superelastic properties. The microcoils can be extended up to 10-20 times of their original coil length, and quickly recover the original state after releasing the force. A mechanical model of the carbon coils with a large spring index is developed to describe their extension and contraction. Given the initial coil parameters, this mechanical model can successfully account for the geometric nonlinearity of the spring constants for carbon micro- and nanocoils, and is found in a good agreement with the experimental data in the whole stretching process.

Carbon nanofiber growth in plasma-enhanced chemical vapor deposition

A theoretical model to describe the plasma-assisted growth of carbon nanofibers (CNFs) is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters, such as the growth rate due to surface and bulk diffusion, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon atoms on the catalyst surface, and the surface coverages, have been studied. The dependence of these parameters on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface is quantified. The optimum conditions under which a low-temperature plasma environment can benefit the CNF growth are formulated. These results are in good agreement with the available experimental data on CNF growth and can be used for optimizing synthesis of related nanoassemblies in low-temperature plasma-assisted nanofabrication. © 2008 American Institute of Physics.

Effects of ions and atomic hydrogen in plasma-assisted growth of single-walled carbon nanotubes

The growth of single-walled carbon nanotubes (SWCNTs) in plasma-enhanced chemical vapor deposition (PECVD) is studied using a surface diffusion model. It is shown that at low substrate temperatures (≤1000 K), the atomic hydrogen and ion fluxes from the plasma can strongly affect nanotube growth. The ion-induced hydrocarbon dissociation can be the main process that supplies carbon atoms for SWCNT growth and is responsible for the frequently reported higher (compared to thermal chemical vapor deposition) nanotube growth rates in plasma-based processes. On the other hand, excessive deposition of plasma ions and atomic hydrogen can reduce the diffusion length of the carbon-bearing species and their residence time on the nanotube lateral surfaces. This reduction can adversely affect the nanotube growth rates. The results here are in good agreement with the available experimental data and can be used for optimizing SWCNT growth in PECVD.

Inductively coupled Ar/CH₄/H₂plasmas for low-temperature deposition of ordered carbon nanostructures

The study of inductively coupled Ar/CH 4/H 2 plasmas in the plasma enhanced chemical vapor deposition (PECVD) of self-assembled carbon nanostructures (CN) was presented. A spatially averaged (global) discharge model was developed to study the densities and fluxes of the radical neutrals and charged species, the effective electron temperature, and methane conversion factors under various conditions. It was found that the deposited cation fluxes in the PECVD of CNs generally exceed those of the radical neutrals. The agreement with the optical emission spectroscopy (OES) and quadrupole mass spectrometry (QMS) was also derived through numerical results.

Suppression of current fluctuations in a crossed E×B field system for low-voltage plasma immersion treatment

Plasma transport in a hybrid dc vacuum arc plasma source for ion deposition and plasma immersion treatment is considered. It is found that external crossed electric and magnetic fields near the substrate can significantly reduce the relative amplitude of ion current fluctuations I-f at the substrate surface. In particular, I-f decreases with the applied magnetic field when the bias voltage exceeds 300 V, thus allowing one to reduce the deviations from the rated process parameters. This phenomenon can be attributed to an interaction between the metal-plasma jet from the arc source and the discharge plasma in the crossed fields. © 2006 American Institute of Physics.

Low-temperature plasma-assisted growth of optically transparent, highly oriented nanocrystalline AlN

Optically transparent, highly oriented nanocrystalline AlN(002) films have been synthesized using a hybrid plasma enhanced chemical vapor deposition and plasma-assisted radio frequency (rf) magnetron sputtering process in reactive Ar+ N2 and Ar+ N2 + H2 gas mixtures at a low Si(111)/glass substrate temperature of 350 °C. The process conditions, such as the sputtering pressure, rf power, substrate temperature, and N2 concentration were optimized to achieve the desired structural, compositional, and optical characteristics. X-ray diffractometry reveals the formation of highly c -oriented AlN films at a sputtering pressure of 0.8 Pa. Field emission scanning electron microscopy suggests the uniform distribution of AlN grains over large surface areas and also the existence of highly oriented in the (002) direction columnar structures of a typical length ∼100-500 nm with an aspect ratio of ∼7-15. X-ray photoelectron and energy dispersive x-ray spectroscopy suggest that films deposited at a rf power of 400 W feature a chemically pure and near stoichiometric AlN. The bonding states of the AlN films have been confirmed by Raman and Fourier transform infrared spectroscopy showing strong E2 (high) and E1 transverse optical phonon modes. Hydrogenated AlN films feature an excellent optical transmittance of ∼80% in the visible region of the spectrum, promising for advanced optical applications.

Surface fluxes of Si and C adatoms at initial growth stages of SiC quantum dots

Self-assembly of highly stoichiometric SiC quantum dots still remains a major challenge for the gas/plasma-based nanodot synthesis. By means of a multiscale hybrid numerical simulation of the initial stage (0.1-2.5 s into the process) of deposition of SiCSi (100) quantum dot nuclei, it is shown that equal Si and kst atom deposition fluxes result in strong nonstoichiometric nanodot composition due to very different surface fluxes of Si and C adatoms to the quantum dots. At this stage, the surface fluxes of Si and C adatoms to SiC nanodots can be effectively controlled by manipulating the SiC atom influx ratio and the Si (100) surface temperature. It is demonstrated that at a surface temperature of 800 K the surface fluxes can be equalized after only 0.05 s into the process; however, it takes more then 1 s at a surface temperature of 600 K. Based on the results of this study, effective strategies to maintain a stoichiometric ([Si] [C] =1:1) elemental ratio during the initial stages of deposition of SiCSi (100) quantum dot nuclei in a neutral/ionized gas-based process are proposed.

Thermophoretic control of building units in the plasma-assisted deposition of nanostructured carbon films

The role of the plasma-grown nanoparticles in the plasma-enhanced chemical vapor deposition (PECVD) of the nanostructured carbon-based films was investigated. The samples were grown in the low-pressure rf plasmas of CH 4+H2+Ar gas mixtures. The enhanced deposition of the building units from the gas phase was found to support the formation of polymorphous nanostructured carbon films. The results reveal the crucial role played by the thermophoretic force in controlling the deposition of the plasma-grown fine particles.

p-type doping of ZnO by means of high-density inductively coupled plasmas

A custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition system has been used to fabricate N-doped p-type ZnO (ZnO:N) thin films on glass substrates from a sintered ZnO target in a reactive Ar + N2 gas mixture. X-ray diffraction and scanning electron microscopy analyses show that the ZnO:N films feature a hexagonal crystal structure with a preferential (002) crystallographic orientation and grow as vertical columnar structures. Hall effect and X-ray photoelectron spectroscopy analyses show that N-doped ZnO thin films are p-type with a hole concentration of 3.32 × 1018 cm- 3 and mobility of 1.31 cm2 V- 1 s- 1. The current-voltage measurement of the two-layer structured ZnO p-n homojunction clearly reveals the rectifying ability of the p-n junction. The achievement of p-type ZnO:N thin films is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process.

Microstructure and electromagnetic characteristics of Ni nanoparticle film coated carbon microcoils

Carbon microcoils (CMCs) have been coated with a Ni nanoparticle film using an electroless plating process. The morphology, the elemental composition and the phases in the coating layer, complex permittivity and permeability of the CMCs and Ni-coated CMCs were, respectively, investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and microwave vector network analysis at room temperature. A homogeneous dispersion of Ni nanoparticles on the outer surface of the CMCs was obtained, with a mean particle size of ∼34.4 nm and the phosphorus content of about 8.5 wt%. When comparing the coated and uncoated CMC samples, the real (ε′) and imaginary (ε″) part of the complex permittivity as well as dielectric dissipation factor (tgδε = ε″/ε′) of the Ni-coated CMCs were much smaller, while the real (μ′) and imaginary (μ″) part of the complex permeability and the magnetic dissipation factor (t g σμ = μ″ / μ′) were larger. The enhanced microwave absorption of Ni-coated CMCs resulted from stronger dielectric and magnetic losses. In contrast, the microwave absorption of uncoated CMCs was mainly attributed to the dielectric rather than magnetic losses.

Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas

Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 °C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 °C. It is found that the variations of the crystalline fraction fc, bonded hydrogen content CH, optical bandgap ETauc, film microstructure and growth rate Rd are closely related to the substrate temperature. In particular, at a substrate temperature of 300 °C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63nms-1, a low hydrogen content of 4.0at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

High-rate, room temperature plasma-enhanced deposition of aluminum-doped zinc oxide nanofilms for solar cell applications

A custom-designed inductively coupled plasma (ICP)-assisted radio-frequency magnetron sputtering deposition system has been employed to synthesize aluminium-doped zinc oxide (ZnO:Al) nanofilms on glass substrates at room temperature. The effects of film thickness and ZnO target (partially covered by Al chips) power on the structural, electrical and optical properties of the ZnO:Al nanofilms are studied. A high growth rate (∼41 nm/min), low electrical sheet resistance (as low as 30 Ω/□) and high optical transparency (>80%) over the visible spectrum has been achieved at a film thickness of ∼615 nm and ZnO target power of 150 W. The synthesis of ZnO:Al nanofilms at room temperature and with high growth rates is attributed to the unique features of the ICP-assisted radio-frequency magnetron sputtering deposition approach. The results are relevant to the development of photovoltaic thin-film solar cells and flat panel displays.