Recuperação de cobre de rejeitos de galvanoplastia utilizando resinas de troca iônica

Neste estudo, a sorção e recuperação de íons metálicos de resíduos sólidos industriais provenientes de uma indústria de galvanoplastia situada no Rio de Janeiro (Brasil) foram investigadas através da utilização de duas resinas comerciais de troca iônica: Lewatit VPOC 1800 (fortemente ácida, tipo gel) e Lewatit VPOC 1960 (fortemente básica, tipo gel), produzidas pela Lanxess-Bayer Chemicals. As características físico-quimicas das resinas e do lodo galvânico foram determinadas. Os estudos de sorção das resinas foram conduzidos em batelada e em coluna. Baseado nesses estudos, os parâmetros de sorção e das curvas de ruptura foram determinados. Os estudos de equilíbrio e cinética de sorção também foram realizados. O resíduo de galvanoplastia era composto pelos metais: Cu2+, Fe3+, Al3+, Ni2+ e Cr3+. A capacidade de sorção qe das resinas Lewatit VPOC 1800 variou entre 0,1-1,9 mg g-1 para Cu2+, 0,01-0,6 mg g-1 para Fe3+ e 0,2-0,4 mg g-1 para Al3+. Enquanto que para a resina Lewatit VPOC 1960, os valores de qe variou entre 0,01-0,4 mg g-1 para Cu2+ e 0,01 0,2 mg g-1 para Fe3+ dependendo da concentração do metal e do tempo de contato. A capacidade de sorção para a resina Lewatit VPOC 1960 foi restrita para íons Cu2+ e Fe3+ os quais formam complexos aniônicos com íons Cl-. O modelo de Freundlich foi o mais adequado para descrever o equilíbrio de troca iônica de ambas as resinas. Já em relação ao mecanismo de sorção, o modelo pseudo-segunda ordem tipo 1 foi o mais aplicável. O ponto de ruptura das resinas Lewatit VPOC 1800 e Lewatit VPOC 1960 em relação aos íons Cu2+ocorreu quando passou através da coluna, 1860 cm3 e 2220 cm3 de solução de resíduo sólido respectivamente (20 g de resina, 100 mg L-1 de íons Cu2+, vazão de 60 cm3 min-1). Os íons metálicos Cu2+, Fe3+, Al3+, foram dessorvidos em alta proporção da resina Lewatit VPOC 1800 passando pela coluna solução aquosa de H2SO4 2,4 mol L-1. Já os metais Cu2+ e Fe3+ foram eluídos da resina Lewatit VPOC 1960 com solução aquosa de HCl 2,0 mol L-1. A recuperação seletiva de Cu2+ não foi alcançada porque Cu2+ e Fe3+ precipitam na mesma faixa de pH

Optical parameters and absorption of copper (II)-azo complexes thin films as optical recording media

Smooth thin films of three kinds of azo dyes of 2-(5'-tert-butyl-3'-azoxylisoxazole)-1, 3-diketones and their copper (II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on a glass substrate in the 300-600 nm wavelength region were measured. Optical constants (complex refractive index N=n+ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon(epsilon=epsilon(1)+i epsilon(2)), absorption coefficients alpha as well as reflectance R of thin films were then calculated. In addition, one of the copper (II)-azo complex thin film prepared on glass substrate with an Ag reflective layer was also studied by atomic force microscopy (AFM) and static optical recording. AFM study shows that the copper (II)-azo complex thin film is very smooth and has a root mean square surface roughness of 1.89 nm. Static optical recording shows that the recording marks on the copper (II)-azo complex thin film are very clear and circular, and the size of the minimal recording marks can reach 200 nm. (c) 2004 Elsevier B.V. All rights reserved.

Determination and analysis of the optical constants of thin films of nickel(II) and copper(II) hydrazone complexes by spectroscopic ellipsometry

Thin films of four nickel(II) and copper(II) hydrazone complexes, which will hopefully be used as recording layers for the next-generation of high-density recordable disks, were prepared by using the spin-coating method. Absorption spectra of the thin films on K9 optical glass substrates in the 300-700 nm wavelength region were measured. Optical constants (complex refractive indices N) and thickness d of the thin films prepared on single-crystal silicon substrates in the 275-675 nm wavelength region were investigated on a rotating analyzer-polarizer scanning ellipsometer by fitting the measured ellipsometric angles (Psi(lambda) and Delta(lambda)) with a 3-layer model (Si/dye film/air). The dielectric functions epsilon and absorption coefficients alpha as a function of the wavelength were then calculated. Additionally, a design to achieve high reflectivity and optimum dye film thickness with an appropriate reflective layer was performed with the Film Wizard software using a multilayered model (PC substrate/reflective layer/dye film/air) at 405 nm wavelength.

Nickel(II) and copper(II) complexes containing 2-(2-(5-substitued isoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane-1,3-dione ligands: Synthesis, spectral and thermal characterizations

Two new hydrazone chelating ligands, 2-(2-(5-methylisoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane-1,3-dione (HL1) and 2-(2-(5-tert-butylisoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane- 1,3-dione (HL2), and their nickel(II) and copper(II) complexes were synthesized using the procedure of diazotization, coupling and metallization. Their structures were postulated based on elemental analysis, H-1 NMR, ESI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films of these complexes on K9 glass substrates were prepared using spin-coating and their absorption properties were evaluated. The thermal properties of the metal(II) complexes were investigated by thermogravimetry (TG) and differential thermogravimetry (DTG). Different thermodynamic and kinetic parameters namely activation energy (E

Low-loss planar and stripe waveguides in Nd3+-doped silicate glass produced by oxygen-ion implantation

We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Effects of Yb ion concentration on the spectral properties of lead silica glasses

The spectral properties in different concentration of Yb ions (0.5-5 mol%)-doped silica glasses are explored in this paper. The glasses are prepared by traditional melting method. The absorption spectra and the fluorescent lifetime (tau(f)) are measured at room temperature and low temperature (18 K). The stimulated cross-section (sigma(emi)) and potential laser properties (beta(min), I-sat, I-min) are calculated based on the absorption spectra. The absorption cross-section (sigma(abs)) are in the range 1.08 x 10(-20) - 1.18 x 10(-20) cm(2) in different glasses, the fluorescence lifetime (tau(f)) change from 1.9 to 1.2 ms with the increase of Yb3+ concentration. The potential laser properties indicate that lead silica glass is a good host for highly Yb ion doping glass. (c) 2005 Elsevier B.V. All rights reserved.

Low loss waveguide in Nd3+-doped silicate glass fabricated by carbon ion implantation

Low loss index enhanced planar waveguides in Nd3+-doped silicate glass were fabricated by 3.0 MeV C+ ion implantation. The enhancement of the refractive index confined the light propagating in the waveguide. The prism-coupling method was used to measure dark modes in the waveguide. The effective refractive indices of the waveguide were obtained based on the dark modes. The moving fiber method was applied to measure the waveguide propagation loss. Loss measured in non-annealed samples is about 0.6 dB/cm. And the waveguide mode optical near-field output at 633 nm was presented. (c) 2005 Elsevier B.V. All rights reserved.

Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers

Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01

Property studies of optical waveguide formed by 6.0 MeV carbon ion implantation into Nd : silicate glass

Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.