970 resultados para Triple Bottom Line (TBL)


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Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

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It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency.

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The GGA triplet repeats are widely dispersed throughout eukaryotic genomes. (GGA)n or (GGT)n oligonucleotides can interact with double-stranded DNA containing (GGA:CCT)n to form triple-stranded DNA. The effects of 8 divalent metal ions (3 alkaline-earth metals and 5 transition metals) on formation of these purine-rich triple-helix DNA were investigated by electrospray ionization Fourier transform ion cyclotron resonance mass spectrometry (ESI-FT-MS). In the absence of metal ions, no triplex but single-strand, duplex, and purine homodimer ions were observed in mass spectra. The triple-helix DNA complexes were observed only in the presence of certain divalent ions. The effects of different divalent cations on the formation of purine-rich triplexes were compared. Transition-metal ions, especially Co2+ and Ni2+, significantly boost the formation of triple-helix DNA, whereas alkaline-earth metal ions have no positive effects on triplex formation. In addition, Ba2+ is notably beneficial to the formation of homodimer instead of triplex.

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Scanned probe oxidation (SPO) nanolithography has been performed with an atomic force microscope (AFM) on an octadecyl-terminated silicon (111) surface to create protuberant oxide line patterns under ambient conditions in contact mode. The kinetic investigations of this SPO process indicate that the oxide line height increases linearly with applied voltage and decreases logarithmically with writing, speed. The oxide line width also tends to vary with the same law. The ambient humidity and the AFM tip state can remarkably influence this process, too. As compared with traditional octadecylsilated SiO2/Si substrate, such a substrate can guarantee the SPO with an obviously lowered voltage and a greatly increased writing speed. This study demonstrates that such alkylated silicon is a promising silicon-based substrate material for SPO nanolithography.

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Using a solid phase extraction mini-column home-made from a neutral extractant Cyanex 923, inorganic Hg could be on-line preconcentrated and simultaneously separated from methyl mercury. The preconcentrated Hg (11) was then eluted with 10% HNO3 and subsequently reduced by NaBH4 to form Hg vapor before determination by cold vapor atomic absorption spectrometry (CVAAS). Optimal conditions for and interferences on the Hg preconcentration and measurement were at 1% HCl, for a 25 mL sample uptake volume and a 10 mL min(-1) sample loading rate. The detection limit was 0.2 ng L-1 and much lower than that of conventional method (around 15.8 ng L-1). The relative standard deviation (RSD) is 1.8% for measurements of 40 ng L-1 of Hg and the linear working curve is from 20 to 2000 ng L-1 (with a correlation coefficient of 0.9996). The method was applied in determination of inorganic Hg in city lake and deep well water (from Changchun, Jilin, China), and recovery test results for both samples were satisfactory.

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An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices.

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By comparing the phosphorescence spectra of Gd(acac)(3) (acac: acetylacetone) and Gd(TFacac)(3) (TFacac: 1, 1, 1-trifluoro-acetylacetone), the effect of fluorine replacing of hydrogen was discussed. It can lower the triplet state energy of acac and make it more suitable to the D-5(1) energy state of europium. Organic electroluminescent (OEL) devices with corresponding europium complexes as emissive layers were fabricated. A triple laver-type device with a structure of glass substrate/indium-tin oxide (ITO)/poly(N-vinylcarbazole) (PVK)/PVK:Eu(TFacac)(3)phen:2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD)/PBD/Al exhibits bright red luminescence upon applying dc voltage, The device has the properties of a diode and the current-bias voltage line was obtained.

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Three cellulose derivatives were synthesized and used as chiral stationary phases based on silica gel. The effects of adsorbances on the column numbers and stabilities have been investigated. These stationary phases exhibited high chiral recognition for various racemates. At the same time, the on-line curves of polarimeter were obtained by high performance liquid chromatography with polarimeter as on-line detector.

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The catalytic oxidation of cyclohexene to cyclohexanone using Pd(OAc)(2)/HQ/FePc was investigated in an acidic aqueous solution of acetonitrile. The role of each component of this system in the oxidation of cyclohexene was explored by means of UV-VIS, IR, XPS spectroscopy and. cyclic voltammetry, respectively. Based on the experimental results, the mechanism of the oxidation of cyclohexene catalyzed by Pd(OAc)(2)/HQ/FePc was elucidated.

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Pure X-ray diffraction profiles have been analysed for polyamide 1010 and PA1O1O-BMI system by means of multipeak fitting resolution of X-ray diffraction. The methods of variance and fourth moment have been applied to determine the particle size and strain values for the paracrystalline materials. The results indicated that both variance and fourth moment of X-ray diffraction line profile yielded approximately the same values of the particle size and the strain. The particle sizes of (100) reflection have been found to decrease with increasing BMI content, whereas the strain values increased.