Study on growth and properties of novel gamma-LiAlO2 substrate

Transparent gamma-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O-2-atmosphere at 1100 degrees C for 70 h became opaque and Li-poor phase (LiAl5O8); while, that annealed in Li-rich atmosphere kept transparent and smooth. The full-width at half maximum value dropped to 30 arcsecs when the wafer was annealed in Li-rich atmosphere. That annealed in O-2-atmosphere increased to 78 arcsec. Compared with absorption spectra, we can conclude that the 196 nm absorption peak was caused by Li vacancies and the 736 nm peak was caused by O vacancies.

Mg，Ti共掺Al2O3透明多晶陶瓷光谱性能研究

Transparent polycrystalline MgO and TiO2 codoped Al2O3 ceramics were fabricated by conventional solid-state pressureless processing. The absorption, emission and excitation spectra of ( Mg, Ti : Al2O3 ceramics were measured. Owing to charge compensation of Mg2+, only UV absorption around 250nm was observed due to O2- -> Ti4+ charge transfer transitions (CT) when Ti content was low. As a result, the emission peaks of isolated Ti4+ ion located at 280-290nm and 410-420nm were observed. Besides absorption peak of V, ion, the characteristic absorption peak of V, ion centered at 490nm was observed in Mg, Ti) : Al2O3 ceramics when Ti content was high. The emission spectra of Ti3+, ion in polycrystalline Al2O3 ceramics coincide with that of Ti: Al2O3 single crystal.

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

显微成像荧光屏用无机闪烁单晶薄膜的研究进展

随着第三代同步辐射源的出现，由荧光屏和CCD耦合组成的、具有亚微米级空间分辨率、快速在线成像功能的探测器在医疗、安检、工业、科研等领域将会得到广泛应用．本文主要综述了成像荧光屏用材料的概况和发展趋势，重点阐述了闪烁单晶薄膜的研究及发展情况．