Responses of plasma transaminase activity in Cyprinus carpio var. communis to mercury toxicity

The present study reports the behavioural and enzymological responses in a freshwater teleost fish, Cyprinus carpio var. communis, exposed to acute and sublethal toxicities of mercuric chloride. During acute treatment, significant behavioural changes like erratic swimming, excess mucus secretion and increased opercular movements were noticed. During acute and sublethal treatments, both aspartate amino transferase and alanine amino transferase activity increased throughout the study period. Comparing the treatments, the changes in enzyme activities were found high in acute treatment and all the values were significant at 5% level. The above findings can be used as non-specific biomarkers of environmental pollutants.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Laser-vapour interaction in high-power cw Nd:YAG laser welding

During high-power cw Nd:YAG laser welding a vapour plume is formed containing vaporised material ejected from the keyhole. Spectroscopic studies of the vapour emission have demonstrated that the vapour can be considered as thermally excited gas with a stable temperature (less than 3000K), not as partially ionised plasma. In this paper, a review of temperatures in the vapour plume is presented. The difficulties in the analysis of the plume spectroscopic results are reviewed and explained. It is shown that particles present in the vapour interact with the laser beam, attenuating it. The attenuation can be calculated with Mie scattering theory, however, vaporisation and particle formation also both play a major role in this process. The laser beam is also defocused due to the scattering part of the attenuation mechanism, changing the energy density in the laser beam. Methods for mitigating the effects of the laser beam-vapour interaction, using control gases, are presented together with their advantages and disadvantages. This 'plume control' has two complementary roles: firstly, the gas must divert the vapour plume from out of the laser beam path, preventing the attenuation. Secondly, the gas has to stabilise the front wall of the keyhole, to prevent porosity formation.