MODELING OF ELECTRON-TUNNELING TIMES IN ASYMMETRIC DOUBLE QUANTUM-WELLS

A scattering process modeled by an imaginary potential V(I) in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V(I) approximately -5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.

三维FDTD方法计算光子晶体薄板结构

利用三维时域有限差分方法计算了具有不同介电常数的光子晶体薄板结构,得到了这些结构的带隙的数值结果,并作了分析;这些结果对于设计光子晶体器件有着指导作用.