泽兰实蝇的生态学特性及对紫茎泽兰的控制作用

紫茎泽兰(Eupatorium adenophorum Spreng)是一种原产于墨西哥的恶性杂草。近年来已严重妨碍了云南省甚至整个西南地区、林、牧业的发展。自1984年8月引进泽兰实蝇(procecidochares utilis Stone)开展了生物防治研究。已在云南境内七个地州（市）定殖扩散。为了解泽兰实蝇的控制作用，本文从研究泽从实蝇生态学特性入手。分析了泽兰实蝇生态学特性与紫茎泽兰生物防治的关系。定量地评价了泽兰实蝇的控制作用。并且应用灰色系统中局势决策方法比较了不同环境条件下的生防效果。其主要结果如下：1、泽兰实蝇雌性与雄性成虫的存活曲线均近于Deevery I型；雌雄一并来看。则成虫存活曲线为Deevery II型；雌性成虫的寿命比雄性长。产卵峰期多在产卵开始后的第二到第四天。2、泽兰实蝇幼虫与成虫均存在密度制约。在平均每雌占有两枝供试产卵枝条时产卵量最大。同时孕育虫的后代也最多。3、泽兰实蝇的净增殖率R. = 24.365。内禀增长率r_m = 0.055。周限增长值λ = 1.057。种群加倍时间t = 12.603天，世代周期T = 58.371天。4、泽兰实蝇幼虫种群的空间分布呈聚集型且接近于负二项分布。一般来说平均拥挤度大的地区，对紫茎泽兰的控制效果也好。5、利用计算机模拟术对泽兰实蝇的控制作用进行拟合。较之以寄生率来评价生防效果更为科学，也更为符合客观实际。6、对不同环境下的控制作用进行局势决策可知，温度较高。湿度偏低的地区。生防效果优于那些温度较低或温、温度均较高的地区。在本文所进行调查的几个样地中，泽兰实蝇控制效果大小的次序依次为：元江＞宜良＞双柏＞思茅。

Electronic structures of T-shaped quantum wires

In this paper, we propose the periodic boundary condition which can be applied to a variety of semiconductor nanostructures to overcome che difficulty of solving Schrodinger equation under the natural boundary condition. When the barrier width is large enough. the average of the maximum and minimum of energy band under the periodic boundary condition is very close to the energy level obtained under the natural boundary condition. As an example, we take the GaAs/Ga1-xAlxAs system, If the width of the Ga1-xAlxAs barrier is 200 Angstrom, the average of the maximum and minimum of energy band of the GaAs/Ga1-xAlxAs superlattices is very close to the energy level of the GaAs/Ga1-xAlxAs quantum wells (QWs). We give the electronic structure effective mass calculation of T-shaped quantum wires (T-QWRs) under the periodic boundary condition, The lateral confinement energies E1D-2D of electrons and holes, the energy difference between T-QWRs and QWs, are precisely determined.

New observation on the luminescence of CdS clusters in zeolite-Y

The excitation spectrum of CdS dusters in zeolite-Y is consistent with their absorption spectrum, both showing two absorption bands that are assigned to the Is-is and Is-lp transitions, respectively. A new emission at 400 nn is considered to be the recombination of the bounded excitons. The emission firstly increases then decreases with increasing cluster size or loading. The emission by excitation into the Is-is band is stronger and sharper than that by excitation into the Is-lp band. This phenomenon is attributed to the size inhomogeneity and the strong electron-phonon interaction of the dusters. Copyright (C) 1996 Elsevier Science Ltd

Self-consistent calculation of electronic states in asymmetric double barrier structure

With contributions from both three-dimensional (3D) electrons in heavily doped contacts and 2D electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and that in the central well of an asymmetric double barrier structure (DBS). By choosing the thickness of the incident barrier properly, it is revealed that these two quasi-bound levels may merge into a unique bound level in the off-resonance regime which shows a very good 2D nature in contrast to the conventional picture for level crossing. An evident intrinsic I-V bistability is also shown. It is noticeable that the effect of charge build-up in the central well is so strong that the electric field in the incident barrier even decreases when the applied bias increases within the resonant region.

CHARACTERISTICS OF OXIDES FORMED FROM A SI0.5GE0.5

X-ray photoelectron spectroscopy (XPS) combined with Auger electron spectroscopy (AES) have been used to study the oxides from a Si0.5Ge0.5 alloy grown by molecular beam epitaxy (MBE). The oxidation was performed at 1000 degrees C wet atmosphere. The oxide consists of two layers: a mixed (Si,Ge)O-x layer near the surface and a pure SiOx layer underneath. Ge is rejected from the pure SiOx and piles up at the SiOx/SiGe interface. XPS analysis demonstrates that the chemical shifts of Si 2p and Ge 3d in the oxidized Si0.5Ge0.5 are significantly larger than those in SiO2 and GeO2 formed from pure Si and Ge crystals.

外磁场对(Ga,Mn)As有效g因子的影响

利用时间分辨Kerr旋光技术测量低温下稀磁半导体Ga_(0.937)Mn_(0.063)As中光注入极化载流子的自旋进动信号,并观察到自旋极化载流子的有效g因子值随外磁场的增强而增大的反常现象.这归结于磁场导致局域化空穴转化为非局域化空穴,从而使自发磁化强度增强,有效g因子值增大.基于此物理图像,进一步给出了(Ga,Mn)As的有效g因子与外磁场的关系式.

量子链和量子点光学特性的比较研究

比较研究了InGaAs/GaAs量子链和量子点的稳态和瞬态光学特性.实验发现,量子链的荧光寿命有很强的探测能量依赖关系,而量子点的荧光寿命随能量变化较小;量子链的荧光寿命随着激发功率迅速增加,高功率时趋于饱和,而量子点的荧光寿命随激发功率变化缓慢;此外,量子链样品的荧光上升时间也比量子点的小得多.这些结果清楚表明,在量子链结构中,参与发光的载流子之间存在很强的耦合和输运.进一步分析表明,这种耦合作用主要发生在量子链方向.荧光的偏振特性进一步证实了这一点.

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据.

InGaAs/GaAs量子链的光学特性研究

研究了InGaAs/GaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时,荧光寿命趋于饱和.这些结果清楚地表明,在量子链结构中,参与发光的载流子之间存在明显的耦合和输运现象,进一步分析表明,这种输运主要是由于载流子沿量子链方向的耦合造成的.发光的偏振特性研究进一步证实了载流子沿量子链方向输运过程.

半导体量子点及其应用(Ⅱ)

4 半导体量子点的应用理论分析表明,基于三维受限量子点的分离态密度函数的量子器件,以其独特的优异电学、光学性能和极低功耗,在纳米电子学、光电子学,生命科学和量子计算等领域有着极其广泛的应用前景,本文仅就量子点在量子点激光器、量子点红外探测器、单光子光源、单电子器件和量子计算机等方面的应用作一简单的介绍.