Excitation energy dependent raman signatures of ABA- and ABC-stacked few-layer graphene

The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81â €...eV were used. The position and the line shape of the Raman 2D, G*, N, M, and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established.

Modeling phytoplankton dynamics in the River Darling (Australia) using the radial basis function neural network

A radial basis function neural network was employed to model the abundance of cyanobacteria. The trained network could predict the populations of two bloom forming algal taxa with high accuracy, Nostocales spp. and Anabaena spp., in the River Darling, Australia. To elucidate the population dynamics for both Nostocales spp. and Anabaena spp., sensitivity analysis was performed with the following results. Total Kjeldahl nitrogen had a very strong influence on the abundance of the two algal taxa, electrical conductivity had a very strong negative relationship with the population of the two algal species, and flow was identified as one dominant factor influencing algal blooms after a scatter plot revealed that high flow could significantly reduce the algal biomass for both Nostocales spp. and Anabaena spp. Other variables such as turbidity, color, and pH were less important in determining the abundance and succession of the algal blooms.

Polarization dependence of double resonant Raman scattering band in bilayer graphene

The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polarization dependence study, however, we reveal that each of the four different peaks is actually doubly degenerate in its scattering channels, i.e., two different scattering paths with similar Raman frequency shifts for each peak. We find theoretically that one of these two paths, ignored for a long time, has a small contribution to their scattering intensities but are critical in understanding their polarization dependences. Because of this, the maximum-to-minimum intensity ratios of the four peaks show a strong dependence on the excitation energy, unlike the case of single-layer graphene (SLG). Our findings thus reveal another interesting aspect of electron-phonon interactions in graphitic systems. © 2014 Elsevier Ltd. All rights reserved.

Photosynthetic physiology and growth as a function of colony size in the cyanobacterium Nostoc sphaeroides

Algal size can affect the rate of metabolism and of growth. Different sized colonies of Nostoc sphaeroides were used with the aim of determining the effects of colony size on photosynthetic physiology and growth. Small colonies showed higher maximum photosynthetic rates per unit chlorophyll, higher light saturation point, and higher photosynthetic efficiency (a) than large colonies. Furthermore, small colonies had a higher affinity for DIC and higher DIC-saturated photosynthetic rates. In addition, small colonies showed higher photosynthetic rates from 5-45degreesC than large colonies. There was a greater decrease in Fv/Fm after exposure to high irradiance and less recovery in darkness for large colonies than for small colonies. Relative growth rate decreased with increasing colony size. Small colonies had less chl a and mass per unit surface area. The results indicate that small colonies can harvest light and acquire DIC more efficiently and have higher maximum photosynthetic rates and growth rates than large colonies.

Structure-function analysis of the inverted terminal repeats of the Sleeping Beauty transposon

Translocation of Sleeping Beauty (SB) transposon requires specific binding of SB transposase to inverted terminal repeats (ITRs) of about 230 bp at each end of the transposon, which is followed by a cut-and-paste transfer of the transposon into a target DNA sequence. The ITRs contain two imperfect direct repeats (DRs) of about 32 bp. The outer DRs are at the extreme ends of the transposon whereas the inner DRs are located inside the transposon, 165-166 bp from the outer DRs. Here we investigated the roles of the DR elements in transposition. Although there is a core transposase-binding sequence common to all of the DRs, additional adjacent sequences are required for transposition and these sequences vary in the different DRs. As a result, SB transposase binds less tightly to the outer DRs than to the inner DRs. Two DRs are required in each ITR for transposition but they are not interchangeable for efficient transposition. Each DR appears to have a distinctive role in transposition. The spacing and sequence between the DR elements in an ITR affect transposition rates, suggesting a constrained geometry is involved in the interactions of SB transposase molecules in order to achieve precise mobilization. Transposons are flanked by TA dinucleotide base-pairs that are important for excision; elimination of the TA motif on one side of the transposon significantly reduces transposition while loss of TAs on both flanks of the transposon abolishes transposition. These findings have led to the construction of a more advanced transposon that should be useful in gene transfer and insertional mutagenesis in vertebrates. (C) 2002 Elsevier Science Ltd. All rights reserved.

HORMONAL REPLACEMENT THERAPY IN FISH - HUMAN GROWTH-HORMONE GENE-FUNCTION IN HYPOPHYSECTOMIZED CARP

Transgenic common carp, Cyprinus carpio, produced by the microinjection of fertilized eggs with a linearized chimeric plasmid pMThGH, a human growth hormone (hGH) gene with a mouse metallothionein-I (MT) gene promoter in pBR322, were used to produce F1 and F2 transgenics. Following hypophysectomy of the transgenic F2 common carp, non-transgenic common carp and non-transgenic crucian carp, growth was monitored for up to 110 days. In addition, recombinant hGH was injected subcutaenously into a group of the non-transgenic crucian carp. Growth rate analyses indicated that (1) hypophysectomy of non-transgenic common carp and crucian carp results in the cessation of growth, (2) hGH administration can stimulate the growth of hypophysectomized crucian carp and (3) hypophysectomized hGH-transgenic common carp continue to grow in the absence of their own growth hormone, suggesting that the hGH-transgene is being expressed in tissues other than the pituitary.

Antibunching and blinking from a single colloidal CdSe quantum dot

We have investigated the optical properties of single CdSe/ZnS nanocrystals by conducting combinations of experiments on antibunching and photoluminescence intermittence under different experimental conditions. Based on photoluminescence in an antibunching experiment, we analyzed the emission lifetime of QDs by using stretched exponentials. The difference between the parameters obtained from average lifetimes and stretched exponents were analyzed by considering the effect of nonradiative emission. An Auger-assisted tunneling model was used to explain the power law exponents of off time distribution. The power law exponent under high excitation power was correlated with a higher Auger ionization rate. Using the parameters obtained from stretched exponential function and power law, the antibunching phenomena at different time and under different excitation intensity were analyzed.

Single-photon-emitting diode at liquid nitrogen temperature

We report on the study of a single-photon-emitting diode at 77 K. The device is composed of InAs/GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g((2))(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g((2))(0), and provided some useful information for the future application. (c) 2008 American Institute of Physics.

Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot

We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g((2))(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

Exact result for the Green's function of a two-dimensional interacting electron gas with spin-orbit interaction in a perpendicular magnetic field

An exact property is established for the Green's function of a uniform two-dimensional interacting electron gas in a perpendicular magnetic field with spin-orbit interaction. It is shown that the spin-diagonal Green's function is exactly diagonal in the Landau level index even in the presence of electron-electron interactions. For the Green's function with different spin indexes, only that with adjacent Landau level indexes is non-zero. This exact result should be helpful in calculating the Green's function approximately.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

Single-photon emission from a single InAs quantum dot

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.

Injection locked Fabry-Perot laser diodes for WDM passive optical network spare function

In this paper, a protection scheme for transmitters in wavelength-division-multiplexing passive optical network (WDM-PON) has been proposed and demonstrated. If any downstream transmitter encounters problems at the central office (CO), the interrupted communication can be restored immediately by injecting a Fabry-Perot laser diode (FP-LD) with the upstream lightwave corresponding to the failure transmitter. Compared with the conventional methods, this proposed architecture provides a cost-effective and reliable protection scheme employing a common FP-LD. In the experiment, a 1 36 protection capability was implemented with a 2.5 Gbit/s downstream transmission capability. (C) 2009 Elsevier B.V. All rights reserved.

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO H films.