High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy

Using NH3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (MD) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (MBE) system. Though the Al composition is as low as 0.036, as deduced from photoluminescence (PL) measurements, the AlGaN barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The 2DEG characteristics are verified by the variable temperature Hall measurements down to 7 K. Using a parallel conduction model, we estimate the actual mobility of the 2DEG to be 1100 cm(2)/V s as the sheet carrier density to be 1.0 x 10(12) cm(-2). Our results show that the AlGaN/GaN system is very suitable for the fabrication of high electron mobility transistors (HEMTs). (C) 1998 Elsevier Science B.V. All rights reserved.

Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

Photoluminescence (PL) investigation was carried out on GaInP/GaAs multiple quantum wells structures grown on (001) and (311) B surfaces of GaAs by gas source molecular beam epitaxy. Superlattice structures of GaAs/GaInP grown on (001) GaAs substrate were also studied in comparison. Deep-level luminescence was seen to dominate the PL spectra from the quantum wells and superlattice structures that were grown on (001) GaAs substrate. In contrast, superior optical properties were exhibited in the same structures grown on (311) B GaAs surfaces. The results suggested that GaAs/GaInP quantum well structures on (311) B oriented substrates could efficiently suppress the deep-level emissions, result in narrower PL peaks indicating smooth interfaces. (C) 1998 American Institute of Physics.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. Low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (C) 1998 Elsevier Science B.V. All rights reserved.

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

GaN epilayers on sapphire (0001) substrates were grown by the gas source molecular beam epitaxy (GSMBE) method using ammonia (NH,) gas as the nitrogen source. Properties of gallium nitride (GaN) epilayers grown under various growth conditions were investigated. The growth rate is up to 0.6 mu m/h in our experiments. Cathodoluminescence, photoluminescence and Hall measurements were used to characterize the films. It was shown that the growth parameters have a significant influence on the GaN properties. The yellow luminescence was enhanced at higher growth temperature. And a blue emission which maybe related to defects or impurity was observed. Although the emission at 3.31 eV can be suppressed by a low-temperature buffer layer, a high-quality GaN epilayer can be obtained without the buffer layer. (C) 1998 Elsevier Science B.V. All rights reserved.

Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy

Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.

Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy

Raman scattering, photoluminescence (PL), and nuclear reaction analysis (MA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy, The Raman spectra showed the presence of the E-2 (high) mode of GaN and shift of this mode from 572 to 568 cm(-1) caused by annealing. The results showed that RTA has a significant effect on the strain relaxation caused by the lattice and thermal expansion misfit between the GaN epilayer and the substrate. The PL peak exhibited a blueshift in its energy position and a decrease in the full width at half maximum after annealing, indicating an improvement in the optical quality of the film. Furthermore, a green luminescence appeared after annealing and increased in intensity with increasing annealing time. This effect was attributed to H concentration variation in the GaN film, which was measured by NRA. A high H concentration exists in as-grown GaN, which can neutralize the deep level, and the H-bonded complex dissociates during RTA, This leads to the appearance of a luminescent peak in the PL spectrum. (C) 1998 American Institute of Physics.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Widely Frequency-Tunable Optical Microwave Source Based on Amplified Feedback Laser

A monolithic integrated amplified feedback semiconductor laser is demonstrated as an optical microwave source. The optical microwave frequency is continuously tunable in the range of 19.87-26.3 GHz with extinction ratio above 6 dB, 3-dB linewidth about 3MHz.

High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization.

软件属性保障中的源代码静态分析技术研究

随着硬件性能的不断提升，计算机正在被赋予越来越艰巨的任务，运行其上的软件作为沟通人类思维和底层硬件的桥梁，其重要性日益增加。与此同时，软件系统的规模也在不断变大，所涉及的逻辑也更为复杂，这导致开发人员难免会由于疏漏在软件设计实现的过程中引入缺陷、埋下隐患。所以,如何检验、确保软件的属性就成为时下一个亟待解决的热点问题。而在此背景下，源代码静态分析技术由于恰好可以弥补现有测试方法的不足，已经开始在这一研究领域崭露头角。有鉴于此，本文为了推进安全信息系统的研发，分别围绕源代码静态分析技术在软件属性保障中两个最主要的应用场景展开研究，涉及高等级安全操作系统开发过程中的源代码自动化审计，以及分布式信息系统中平台间互信建立时针对软件属性所进行的远程验证，其中，前者是为从深度上将现有安全操作系统向更高等级推进提供助力，而后者是为了从广度上将信息安全领域现有的围绕单机平台的研究成果向分布式架构推广建立基础。具体来说，本文选择针对编程接口规范的一致性检验和应用静态分析的软件属性远程验证作为研究的切入点，探讨了应用源代码静态分析技术检验、确保软件属性的方法和用途，主要取得以下几个方面的成果： 第一，本文给出了一个基于值等价类的别名分析方法。该方法依据相关的传值操作维护一个值等价类空间，可以在编程接口规范一致性检验的过程中按需推导变量符号间的等值关系，不仅有能力支持上下文相关、路径相关的全局分析，还可以有效应对C代码中因结构、指针等构件所衍生出来的大量变量符号。 第二，针对大部分现有代码静态分析工具分析规模受限的问题，本文围绕编程接口规范的一致性检验给出了可以与别名分析有效结合的性能优化方案。该方案不仅能通过剔除与分析无关的执行分支和引入缓存机制提高分析效率，还可以尽量确保分析的准确性少受影响。 第三，我们设计、实现了一个C代码静态分析工具ABAZER（A Bug AnalyZER）。该工具可以依据用户使用有限自动机模型描述的编程接口规范，对操作系统内核级别的软件进行全局分析，指出代码中可能有悖于规范的部分。我们使用ABAZER实际考查了FreeBSD内核中锁机制以及GCC 4.x中库GNU Libiberty的使用情况，从中发现了若干真实的缺陷。 第四，本文针对现有应用可信计算技术、基于完整性信息进行远程验证的方案在灵活性和实用性上所存在的不足，给出一个扩展方案。该方案通过引入虚拟机技术，在软件构建过程中收集举证信息，应用静态分析方法分析软件功能模块间的相关性，划分出与验证相关的模块，有效控制用户定制软件验证时所要依赖的可信列表的规模，使其有能力适应当今网络环境中的大量异质平台和各种安全需求。此外，它还可以为自身所依赖的可信计算基的替换和更新提供支持。 第五，本文针对Flask架构的特点，给出了一个既能检验强制访问控制实现正确性，又能最大限度保留软件灵活性、使得用户可以在一定程度上对软件进行定制的远程验证方案。该方案依赖源代码静态分析技术界定软件中无需基于完整性进行验证的模块，在进一步缩减可信列表规模的同时，使用代码改写技术在这些模块中自动化地插入监控代码约束软件的动态行为，以达到确保强制访问控制实现正确性的目的。该方案初步展现了源代码静态分析技术在远程验证中广阔的应用前景。

一种开放源代码的网络仿真器的原理与实现

随着互联网的飞速发展,网络拥塞已经成为一个十分重要的问题,网络仿真是一种检测拥塞控制算法有效性的常用方法.该文给出了一种开放源代码的网络仿真器NS2(Network Simulator V2)的原理与实现.首先比较了四种不同仿真器的优缺点,然后详细描述了NS2的模块组成、工作环境、主代码结构以及扩展方法等,最后用RED(Random EarlyDetection)队列调度和移动IP数据传输两个典型实例说明了NS2的应用价值.

measuring acoustic wave transit time in furnace based on active acoustic source signal

Accurate measurement of transit time for acoustic wave between two sensors installed on two sides of a furnace is a key to implementing the temperature field measurement technique based on acoustical method. A new method for measuring transit time of acoustic wave based on active acoustic source signal is proposed in this paper, which includes the followings: the time when the acoustic source signal arrives at the two sensors is measured first; then, the difference of two arriving time arguments is computed, thereby we get the transit time of the acoustic wave between two sensors installed on the two sides of the furnace. Avoiding the restriction on acoustic source signal and background noise, the new method can get the transit time of acoustic wave with higher precision and stronger ability of resisting noise interference.