Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate

We have observed, respectively, a negative differential resistance (NDR) and switching conduction in current-voltage (I-V) characteristics of organic diodes based on copper phthalocyanine (CuPc) film sandwiched between indium-tin-oxide (ITO) and aluminum (Al) by controlling the evaporation rate. The NDR effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (WORM) memory characteristics. The traps in the organic layer and interfacial dipole have been used to explain the NDR effect and switching conduction. This opens up potential applications for CuPc organic semiconductor in low power memory and logic circuits.

PIFA-Mediated Oxidative Cyclization of 1-Carbamoyl-1-oximylcycloalkanes: Synthesis of Spiro-Fused Pyrazolin-5-one N-Oxides

convenient and efficient synthesis of spiro-fused pyrazolin-5-one N-oxides starting from readily available 1-carbamoyl-1-oximylcycloalkanes is developed. This general protocol features a novel and facile way for access to the five-membered azaheterocycles by formation of a new N-N single bond. The key cyclization step utilizes the formation of an N-oxonitrenium intermediate, mediated by the hypervalent iodine reagent PIFA, and its subsequent intramolecular trapping by the amide moiety under rather mild experimental conditions.

Magnetic Coupling between Copper(II) Ions Mediated by Hydrogen-Bonded (Neutral) Water Molecules

A new hydrogen-bonded dinuclear copper(II) coordination compound has been synthesized from the Schiff-base ligand 6-(pyridine-2-ylhydrazonomethyl)phenol (Hphp). The molecular structure of [Cu-2(php)(2)(H2O2)(2)(ClO4)](ClO4)- (H2O) (1), determined by single-crystal X-ray diffraction, reveals the presence of two copper(II) centers held together by means of two strong hydrogen bonds, with O center dot O contacts of only 2.60-2.68 angstrom. Temperature-dependent magnetic susceptibility measurements down to 3 K show that the two metal ions are antiferromagnetically coupled (J = -19.8(2) cm(-1)). This exchange is most likely through two hydrogen-bonding pathways, where a coordinated water on the first Cu, donates a H bond to the O atoms of the coordinated php at the other Cu. This strong O center dot H (water) bonding interaction has been clearly evidenced by theoretical calculations. In the relatively few related cases from the literature, this exchange path, mediated by a (neutral) coordinated water molecule, was not recognized.

Narion/Poly(sodium 4-styrenesulfonate) mixed coating modified bismuth film electrode for the determination of trace metals by anodic stripping voltammetry

To improve the reproducibility, stability, and sensitivity of bismuth film electrode (BiFE), we studied the performances of a mixed coating of two cation-exchange polymers, Nafion (NA) and poly(sodium 4-styrenesulfonate) (PSS), modified glassy carbon BiFE (GC/NA-PSS/BiFE). The characteristics of GC/NA-PSS/BiFE were investigated by scanning electron microscopy and cyclic voltammetry. Various parameters were studied in terms of their effect on the anodic stripping voltarnmetry (ASV) signals. Under optimized conditions, the limits of detection were 71 ng L-1 for Cd(II) and 93 ng L-1 for Pb(II) with a 10 min preconcentration. The results exhibited that GC/NA-PSS/BiFE can be a reproducible and robust toot for monitor of trace metals by ASV rapidly and environmentally friendly, even in the presence of surface-active compounds.

Cathodic electrochemiluminescence in aqueous solutions at bismuth electrodes

The high hydrogen evolution overpotential of a bismuth electrode makes it a powerful electrode for cathodic electro-chemiluminescence studies in aqueous solutions.

Carbon deposition behavior over copper salts of molybdovanadophosphoric acid catalyst supported by magnesia

MgO supported copper salt of molybdovanadophosphoric acid H4PMo11VO40 catalysts were prepared in alcohol by impregnation and the carbon deposition over these catalysts during the n-hexanol oxidation reaction was studied. The coke predominantly deposited on the catalyst surface in the form of CH., and it was not found that it caused the deactivation of the catalyst. The XRD, IR, XPS characterizations reveal that the Keggin structure of the CPMV was unaffected by carbon deposition. Moreover, it was shown that the supported CPMVs over the MgO surface can be beneficial to eliminate the coke. The temperature programmed oxidation (TPO) study showed that coke was formed over the catalyst on two different sites: (1) deposited on the CPMVs which can be burn off at a low temperature; (2) deposited on the MgO which could only be removed at higher temperature. The coke content reached constant with the reaction time increasing.

The preparation of sol-gel materials doped with ionic liquids and trialkyl phosphine oxides for Yttrium(III) uptake

A new material (IL923SGs) composed of ionic liquids and trialkyl phosphine oxides (Cyanex 923) for Y(III) uptake was prepared via a sol-gel method. The hydrophobic ionic liquid 1-octyl-3-methylimidazolium hexafluorophosphate (C(8)mim(+)PF(6)-) was used as solvent medium and pore templating material. The extraction of Y(III) by IL923SGs was mainly due to the complexation of metal ions with Cyanex 923 doped in the solid silica. Ionic liquid was stably doped into the silica gel matrix providing a diffusion medium for Cyanex 923, and this will result in higher removal efficiencies and excellent stability for metal ions separation. IL923SGs were also easily regenerated and reused in the subsequent removal of Y(III) in four cycles.

Electronic structure of interfaces between copper-hexadecafluoro-phthalocyanine and 2,5-bis(4-biphenylyl) bithiophene

The interfaces formed between copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were examined using photoemission and inverse photoemission spectroscopy. It is observed that in F16CuPc/BP2T the heterojunction is characterized by band bending in both materials, while in BP2T/F16CuPc the band bending is confined in BP2T only. The combination of the band bending and finite Debye lengths provides an explanation to the observed ambipolar behavior of the organic thin film transistors based on such heterojunctions.

The relationship between the thermal expansions and structures of ABO(4) oxides

The linear thermal expansion coefficients of ABO(4) compounds are determined and the expansion tendency is analyzed from the chemical bond viewpoint. All chemical bonds contributions are involved. The contributions from different chemical bonds are compared with each other and the origin of the expansion behavior of ABO(4) oxides is revealed that the A-O bonds expansions dominate the compound expansion. The calculated expansion coefficients agree satisfactorily with the experimental data. By analyzing the expansion regularity the range of the expansion coefficients can be qualified. The thermal expansion coefficients of some ABO(4) compounds having not been measured are predicted and discussed.

Electrical characterization of copper phthalocyanine thin-film transistors with fluoride gate insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.