The develop of 622Mbits/s free space laser communication system

622Mbits/s free space laser communication system is developed. IT's communication rate is 622Mbits/s. The whole system include three parts which are signal in and out circuit laser driver and receive circuit and optical antenna The communication principle is introduced The experiment result shows that the transmission of data and image are satisfied with demands of design. It have a definite market value.

Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure

Thermally stable high-resistivity regions have been formed using hydrogen ion implantation at three energies (50, 100, and 180 keV) with three corresponding doses (6 X 10(14) 1.2 X 10(15), and 3 X 10(15) cm(-2)), oxygen implantation at 280keV with 2 X 10(14) cm(-2) as well as subsequent annealing at about 600 degrees C for 10-20s, in AlGaAs/GaAs multiple epitaxial heterojunction structure. After anncaling at 600 degrees C, the sheet resistivity increases by six orders more of magnitude from the as-grown values. This creation of high resistivity is different from that of the conventional damage induced isolation by H or O single implantation which becomes ineffective when anneal is carried out at 400-600 degrees C and the mechanism there of is discussed.

Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

ARM处理器在AFM纳米操作系统中的应用

文章介绍了在原子力显微镜(AFM)纳米操作系统中ARM处理器的应用及开发,在此基础上搭建了具有3D力反馈的纳米操作系统。结合AFM纳米操作系统的实时性问题,进行了ARM开发板的系统软件架构和PSD(四象限光电检测器)信号的PID控制结果的分析,使纳米操作系统在实时性和成像的质量等方面都得到相应改进。