Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure
Data(s) |
1996
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Resumo |
Thermally stable high-resistivity regions have been formed using hydrogen ion implantation at three energies (50, 100, and 180 keV) with three corresponding doses (6 X 10(14) 1.2 X 10(15), and 3 X 10(15) cm(-2)), oxygen implantation at 280keV with 2 X 10(14) cm(-2) as well as subsequent annealing at about 600 degrees C for 10-20s, in AlGaAs/GaAs multiple epitaxial heterojunction structure. After anncaling at 600 degrees C, the sheet resistivity increases by six orders more of magnitude from the as-grown values. This creation of high resistivity is different from that of the conventional damage induced isolation by H or O single implantation which becomes ineffective when anneal is carried out at 400-600 degrees C and the mechanism there of is discussed. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Xu HD; Wang S; Zheng D; Liu HZ; Zhou LS .Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure ,DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995,1996,149(0):85-90 |
Palavras-Chave | #半导体物理 #GAAS |
Tipo |
期刊论文 |