The single-phase brushless doubly-fed machine as a generator for wind turbines

This paper proposes a single-phase variant of the Brushless Doubly-Fed Machine, the Single-Phase BDFM, SPB. Like the BDFM it is a variable speed generator which requires a converter rated at only a fraction of the machine rating, using structure with no brushes. Unlike the BDFM, most of its power is delivered directly into a single-phase grid connection. As such it is a potential replacement for PM generators in small-ish wind turbines, potentially with a much lower cost. In this paper we give details of its operation, with reference to results from the first prototype SPB. We also suggest how it may be controlled, again with experimental results. © 2011 IEEE.

Integrated avalanche diode for 600 v Trench IGBT over-voltage protection

Avalanche multiplication has been one of the major destructive failure mechanisms in IGBTs; in order to avoid operating an IGBT under abnormal conditions, it is desirable to develop peripheral protecting circuits monolithically integrated without compromising the operation and performance of the IGBT. In this paper, a monolithically integrated avalanche diode (D av) for 600V Trench IGBT over-voltage protection is proposed. The mix-mode transient simulation proves the clamping capability of the D av when the IGBT is experiencing over-voltage stress in unclamped inductive switching (UIS) test. The spread of avalanche energy, which prevents hot-spot formation, through the help of the avalanche diode feeding back a large fraction of the avalanche current to a gate resistance (R G) is also explained. © 2011 IEEE.

Symmetrical low voltage ride-through of the Brushless Doubly-Fed Induction Generator

The Brushless Doubly-Fed Induction Generator (BDFIG) shows commercial promise for wind power generation due to its lower cost and higher reliability compared to the Doubly-Fed Induction Generator (DFIG). For the purposes of commercialisation, the BDFIG must meet grid codes at all times. Nowadays, all new wind generators have to ride through certain grid faults, and the Low-Voltage Ride Through (LVRT) capability has become one of the most important points on which to assess the performance a generator. This paper, for the first time, proposes a control scheme to enable the the BDFIG to ride through symmetrical voltage dips. Simulation results and experimental results on a prototype BDFIG show that the proposed scheme gives the capability to ride through low voltage faults. © 2011 IEEE.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.