High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.

Metodologías Sintéticas para la Obtención de Compuestos de Coordinación Metal-Orgánicos

Comunicación a congreso (póster): Reunión conjunta de la Sociedad Española de Mineralogía y la Sociedad Española de Arcillas (SEM-SEA 2012), Bilbao 27-30 de junio 2012.

Cellular and molecular responses of zebrafish to legacy and emerging pollutants: the specific cases of PAHs and metal oxide nanoparticles

270 p.

Grafenoan oinarrituriko aire elektrodoa metal/aire baterietarako

Metal-aire baterietarako grafenoan oinarritutako aire elektrodoaren diseinua eta fabrikazioa. Hasteko, grafenoan eutsitako katalizatzaileen sintesia eta haien analisi elektrokimikoa 'Rotating Disk Electrode' teknikaren bidez burutu dira. Ondoren, katalizatzaile eta egitura desberdineko elektrodoen fabrikazioa eta jokaeraren analisia egin dira bifuntzionala den geruza bikoitzeko elektrodoa lortzeko.