972 resultados para Lamy, Bernard, 1640-1715.
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Heavy goods vehicles exhibit poor braking performance in emergency situations when compared to other vehicles. Part of the problem is caused by sluggish pneumatic brake actuators, which limit the control bandwidth of their antilock braking systems. In addition, heuristic control algorithms are used that do not achieve the maximum braking force throughout the stop. In this article, a novel braking system is introduced for pneumatically braked heavy goods vehicles. The conventional brake actuators are improved by placing high-bandwidth, binary-actuated valves directly on the brake chambers. A made-for-purpose valve is described. It achieves a switching delay of 3-4 ms in tests, which is an order of magnitude faster than solenoids in conventional anti-lock braking systems. The heuristic braking control algorithms are replaced with a wheel slip regulator based on sliding mode control. The combined actuator and slip controller are shown to reduce stopping distances on smooth and rough, high friction (μ = 0.9) surfaces by 10% and 27% respectively in hardware-in-the-loop tests compared with conventional ABS. On smooth and rough, low friction (μ = 0.2) surfaces, stopping distances are reduced by 23% and 25%, respectively. Moreover, the overall air reservoir size required on a heavy goods vehicle is governed by its air usage during an anti-lock braking stop on a low friction, smooth surface. The 37% reduction in air usage observed in hardware-in-the-loop tests on this surface therefore represents the potential reduction in reservoir size that could be achieved by the new system. © 2012 IMechE.
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We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated. © 2013 The Optical Society.
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We measured the carrier concentration distribution of gradient-doped GaAs/GqAlAs epilayers grown by molecular beam epitaxy before and after annealing at 600 degrees C, using electrochemical capacitance voltage profiling, to investigate the internal variation of transmission-mode GaAs photocathodes arising from the annealing process. The results show that the carrier concentration increased after annealing. As a result, the total band-bending energy in the gradient-doped GaAs emission layer increased by 25.24% after annealing, which improves the pbotoexcited electron movement toward the surface. On the other hand, the annealing process resulted in a worse carrier concentration discrepancy between the GaAs and the GaAlAs, which causes a lower back interface potential barrier, decreasing the amount of high-energy photoelectrons. (C) 2009 Optical Society of America
Resumo:
在军事和商业领域中,由多个自治域形成的协作群体对共有资源(如客体、应用程序以及服务等)的访问问题越来越受到重视.协作中的基本事实是:尽管这些自治域有共同的目标,但同时有不同的自身利益.为了有效地保护共有资源,把“信任”的概念引入了协作访问控制中,并在基于量化权限的思想上,提出了细粒度的协作访问控制策略.在该策略里,权限的使用形式是元权限,也就是单位权限,它是访问共有客体权限的一个划分,可为多个域中不同用户所拥有.当访问共有资源时,参与者们所拥有的元权限的值之和以及人数必须达到规定的权限门限值和人数值,并且访问时间是所有参与者的共同许可访问时间段,这使得可以对协作资源进行有效地分布控制.另外,还引入了元权限的使用时间段约束.最后,证明了该细粒度协作访问控制策略关于协作系统的状态转换是保持安全的.
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首先分析了可信计算环境下多远程证明实例执行的动态性、并发性、一致性等问题,提出了一个完整的可信计算环境多远程证明实例动态更新证明方案,以保证通信双方终端计算环境的可信。然后阐述了主要由计算环境组件度量算法、会话组件树计算算法和多远程证明实例证明协议组成可信计算环境证明方法。最后对该证明方法的安全性和效率进行分析,并构建原型系统论证证明方案的可行性和高性能。
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基于实时取证的思想,提出了一种安全可取证操作系统(security forensics operating system,简称SeFOS)的概念和实现思路.提出了其总体结构,建立了该系统的取证行为模型,对其取证服务和取证机制进行了分析并作了有关形式化描述,阐述了证据数据的采集和安全保护方法,提出把取证机制置于内核,基于进程、系统调用、内核资源分配和网络数据等获取证据的方法,并通过模拟实验验证了SeFOS的可取证性.可取证操作系统的研究对于进一步研究可取证数据库管理系统(forensic database management system,简称FDBMS)和可取证网络系统(forensic network,简称FNetWork)具有重要意义.
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在SOI脊形波导上通过光刻的方法制作了高阶布拉格光栅.采用顶层Si厚为2μm的SOI基片,通过半导体芯片制备中的光刻工艺,在脊高为935 nm,波导宽度为2μm的脊形波导上,分别制作了刻蚀深度为565 nm和935 nm的起伏型高阶布拉格光栅,测试表明,在1540~1640 nm波长范围内,得到了大于10 dB的消光比,实现了高阶布拉格光栅在SOI脊形波导上的滤波效果.理论和实验都证明了光栅刻蚀深度的增大将有利于增加高阶布拉格光栅的耦合系数,以及光栅周期数的增加会引起更大的光栅损耗.
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结合制作光子晶体结构的具体要求,研究了电子束曝光得到的电子束胶上(GaAs衬底)随实验条件变化的图形.结果表明,胶的厚度、曝光剂量、显影/定影时间等参数对图形的质量有重要影响.通过合理优化这些参数,我们得到了高质量的掩膜图形.
Resumo:
报道了用纳米碳管模板法制备的GaP纳米棒的拉曼光谱特征,观测到声子限制效应引起的GaP纳米棒TO和LO模的红移,红移量一般在2-10cm^-1之间,与所测到的纳米棒的尺寸有关,在偏振特性研究中,发现GaP纳米棒的偏振特性不能用单根纳米棒的选择定则来解释,而与测量光斑内多根纳米棒的无序取向有关,无序程度越高,偏振特性的方向性越弱,当激发光功率增加时,GaP纳米棒的TO和LO模的频率显著减少,表明纳米棒中的激光加热效应比体材料中强很多,而且GaP纳米棒的拉曼散射强度随激发光功率的增加先饱和,然后减小,表明在强激发功率下GaP纳米棒中的缺陷会迅速增加。
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中国科学院